1
SD453N/R SERIES
F AST RECOVERY DIODES Stud Version
400A
450A
Bulletin I2076 rev. A 09/94
www.irf.com
Features
High power FAST recovery diode series
2.0 to 3.0 µs recovery time
High voltage ratings up to 2500V
High current capability
Optimized turn on and turn off characteristics
Low forward recovery
Fast and soft reverse recovery
Compression bonded encapsulation
Stud version case style B-8
Maximum junction temperature 150°C
Typical Applications
Snubber diode for GTO
High voltage free-wheeling diode
Fast recovery rectifier applications
IF(AV) 400 450 A
@ TC70 70 °C
IF(RMS) 630 710 A
IFSM @ 50Hz 9300 9600 A
@ 60Hz 9730 10050 A
VRRM range 1200 to 2500 1200 to 2500 V
trr 2.0 3.0 µs
@ TJ25 25 °C
TJ- 40 to 150 °C
Parameters Units
SD453N/R
S20 S30
Major Ratings and Characteristics
case style
B-8
SD453N/R Series
2
Bulletin I2076 rev. A 09/94
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Voltage VRRM , maximum repetitive VRSM , maximum non- IRRM max.
Type number Code peak reverse voltage repetitive peak rev. voltage @ TJ = TJ max.
VVmA
12 1200 1300
16 1600 1700
20 2000 2100
25 2500 2600
ELECTRICAL SPECIFICATIONS
Voltage Ratings
SD453N/R 50
SD453N/R
S20 S30
IF(AV) Max. average forward current 40 0 45 0 A 180° conduction, half sine wave
@ case temperature 70 70 °C
IF(RMS) Max. RMS forward current 630 710 A
@ case temperature 55 52 °C
IFSM Max. peak, one-cycle forward, 9300 9600 t = 10ms No voltage
non-repetitive surge current 9730 10050 t = 8.3ms reapplied
7820 8070 t = 10ms 100% VRRM
8190 8450 t = 8.3ms reapplied Sinusoidal half wave,
I2t Maximum I2t for fusing 4 32 46 0 t = 10ms No voltage Initial TJ = TJ max.
395 4 20 t = 8.3ms reapplied
30 6 32 6 t = 10ms 100% VRRM
27 9 297 t = 8.3ms r eapplied
I2√t Maximum I2√t for fusing 4320 4600 KA2√s t = 0.1 to 10ms, no voltage reapplied
VF(TO)1 Low level value of threshold
voltage
VF(TO)2 High level value of threshold
voltage
rf1Low level value of forward
slope resistance
rf2High level value of forward
slope resistance
VFM Max. forward voltage drop 2.20 1.85 V Ipk= 1500A, TJ = T J max , tp = 10ms sinusoidal wave
Parameter Units Conditions
Forward Conduction
A
KA2s
1.09 1.04 (I > π x I F(AV)),TJ = TJ max.
1.00 0.95 (16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
0.74 0.54 (I > π x IF(AV)),TJ = TJ max.
0.80 0.60 (16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
mΩ
V
typical trr Ipk di/dt Vrtrr Qrr Irr
@ 25% IRRM Square Pulse @ 25% IRRM
Code
(µs) (A) (A/µs) (V) (µs) (µC) (A)
Test conditions Max. values @ TJ = 150 °C
Recovery Characteristics
TJ = 25 oC
S20 2.0 1000 50 - 50 3.5 250 120
S30 3.0 1000 50 - 50 5.0 380 150
SD453N/R Series
3
Bulletin I2076 rev. A 09/94
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TJMax. junction operating temperature range -40 to 150
Tstg Max. storage temperature range -40 to 150
RthJC Max. thermal resistance, junction to case 0.1 DC operation
RthCS Max. thermal resistance, case Mounting surface, smooth, flat and
to heatsink greased
T Mounting torque, ± 10% 50 Nm Not lubricated threads
wt Approximate weight 454 g
Case style B - 8 See Outline Table
°C
0.04
Parameter Units Conditions
K/W
Thermal and Mechanical Specifications SD453N/R
S20 S30
180° 0.010 0.010 0.008 0.008 TJ = TJ max.
120° 0.014 0.014 0.014 0.014
90° 0.017 0.017 0.019 0.019 K/W
60° 0.025 0.025 0.026 0.026
30° 0.042 0.042 0.042 0.042
Conduction angle Units Conditions
S20 S30 S20 S30
∆RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Sinusoidal conduction Rectangular conduction
Ordering Information Table
SD 45 3 N 25 S30 P S C
1234 5 67
Device Code
89
1- Diode
2- Essential part number
3-3 = Fast recovery
4-N = Stud Normal Polarity (Cathode to Stud)
R = Stud Reverse Polarity (Anode to Stud)
5- Voltage code: Code x 100 = V RRM (see Voltage Ratings table)
6-t
rr code (see Recovery Characteristics table)
7-P = Stud base B-8 3/4" 16UNF-2A
M = Stud base B-8 M24 X 1.5
8-7S = Isolated lead with silicone sleeve
(Red = Reverse Polarity; Blue = Normal Polarity)
None = Not isolated lead
T = Threaded Top Terminal 3/8" 24UNF-2A
9- C = Ceramic housing
SD453N/R Series
4
Bulletin I2076 rev. A 09/94
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Outlines Table
Case Style B-8
All dimensions in millimeters (inches)
Case Style B-8 with top thread terminal 3/8"
All dimensions in millimeters (inches)
47 (1.85)
27.5 (1.08) 77.5 (3. 05)
80.5 (3. 17)
38 (1.5)
DIA. MAX.
MAX.
MAX.
MAX.
CERAMIC HOUSING
SW 45
* FOR METRIC DEVICE: M24 x 1.5 - LENGHT SCREW 21 (0.83) MAX.
21 (0. 83)
3/4"-16UNF-2A *
25 (0. 98)
3/8"-24UNF-2A
17 (0.67) DIA.
26 (1.023) MAX.
10.5 (0.41) DIA.
12 (0.47) MIN.
47 (1.85)
27. 5 (1. 08) 115 (4. 52)
MIN.
38 (1.5)
DIA. MAX.
245 (9.645)
255 (10.04)
MAX.
MAX.
CERAMIC HOUSING
SW 45
* FOR METRIC DEVICE: M24 x 1.5 - LENGHT SCREW 21 (0.83) MAX.
C.S. 70mm
5(0.20) ± 0.3(0.01)
2
80 (3.15) MAX.
21 (0.83) M AX.
3/4"-16UNF-2A *
SD453N/R Series
5
Bulletin I2076 rev. A 09/94
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Fig. 6 - Forward Power Loss CharacteristicsFig. 5 - Forward Power Loss Characteristics
60
70
80
90
100
110
120
130
140
150
0 100 200 300 400 500
30°60° 90° 120°
180°
Average Forward Current (A)
Con duction Angle
Maximum Allowable Cas e T e mperature (°C)
SD4 5 3N/R . .S30 Seri es
R (DC) = 0.1 K/W
thJC
0
100
200
300
400
500
600
700
800
0 50 100 150 200 250 300 350 400 450
180°
120°
90°
60°
30°
Aver age F orward C urren t (A)
Max imum A ver age F orward P ower Lo ss (W )
RMS Lim it
Con duction Angle
SD453N/ R ..S 20 Series
T = 150°C
J
Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics
40
50
60
70
80
90
100
110
120
130
140
150
0 200 400 600 800
30°60° 90°
180° DC
120°
Aver age F or war d Curr e nt (A)
Conduction Period
Maximum Allow able Case Tempera ture (°C)
S D453N/R ..S 30 Series
R (DC) = 0.1 K/W
thJC
0
100
200
300
400
500
600
700
800
900
1000
0 100 200 300 400 500 600 700
DC
180°
120°
90°
60°
30°
A verage Forward Current (A)
RMS Limit
Max imum Ave rage Fo rward Po wer Lo s s (W)
Condu ction Peri od
S D453N/R. .S 20 Ser ies
T = 150°C
J
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
50
60
70
80
90
100
110
120
130
140
150
0 100 200 300 400 500 600 700
30°60° 90°
180° DC
120°
Av erage Forw ard Cur r en t (A)
Cond uction Peri o d
Max imum Allowable C ase Temperature (°C)
SD453N/ R .. S20 Series
R (DC) = 0.1 K/W
thJC
60
70
80
90
100
110
120
130
140
150
0 50 100 150 200 250 300 350 400 450
30°60° 90° 120°180°
Average Forward Current (A)
Con duction An gl e
Maxim um Allowable Case Temperature (°C)
SD453N/R ..S20 Series
R (DC) = 0.1 K/W
thJC
SD453N/R Series
6
Bulletin I2076 rev. A 09/94
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2000
3000
4000
5000
6000
7000
8000
9000
110100
Num ber O f Equal Amp lit ude Half Cycle Cu r r ent Pu lse s (N)
Pe ak Half Sine Wave For ward Cu rrent (A)
S D453N/R ..S 20 Series
Initial T = 150 °C
@ 60 Hz 0. 0083 s
@ 50 Hz 0. 0100 s
J
At Any Rat e d Lo ad Condition And With
Rated V App li ed Fo ll ow i ng S ur ge.
RRM
2000
3000
4000
5000
6000
7000
8000
9000
10000
0.01 0.1 1
Pulse Trai n Dur ation (s )
Peak Half Sine W ave Forwar d Cur rent (A)
Max imum Non Repe titive Surge Current
SD453N /R..S20 Series
Versus Pulse Train Duration.
I nitia l T = 15 0 °C
No Vo ltage Reap p l ied
Rat ed V Reappl ied
RRM
J
Fig. 9 - Maximum Non-repetitive Surge Current Fig. 10 - Maximum Non-repetitive Surge Current
2000
3000
4000
5000
6000
7000
8000
9000
110100
Num ber O f Equal Am plit ude Ha lf Cycle Current Pu lse s (N)
Pe ak Half Sine Wave Forward C urrent (A)
Initia l T = 150 °C
@ 60 Hz 0.0 083 s
@ 50 Hz 0.0 100 s
J
SD 4 53N/R..S3 0 Ser ies
At A ny Rated Load C on dit ion And Wit h
Rat ed V Applied Following S urg e.
RRM
2000
3000
4000
5000
6000
7000
8000
9000
10000
0.01 0.1 1
Pulse Train Duration (s)
Peak Half Sine Wave Forward Current (A)
M ax im u m No n Rep eti tive S u rge C urr ent
S D 453 N /R..S3 0 Se ries
Versus Pulse Trai n Duration.
Initial T = 150 °C
N o Voltage Rea pp lied
Rat ed V Reapplied
RRM
J
Fig.12 - Maximum Non-repetitive Surge CurrentFig.11 - Maximum Non-repetitive Surge Current
0
100
200
300
400
500
600
700
800
900
1000
0 100 200 300 400 500 600 700 800
DC
180°
120°
90°
60°
30°
Average Forward Current (A)
RMS Limit
M a xi mu m A v er a ge Forw a rd P ower L os s (W)
Cond uction Period
SD453N/R..S 30 Seri es
T = 150°C
J
0
100
200
300
400
500
600
700
800
0 100 200 300 400 500
180°
120°
90°
60°
30°
Average Fo rward Current (A )
Max imum Ave rage Forward Power Lo ss (W )
RMS Limit
Conduction Angle
SD4 53 N/R .. S3 0 Se r ie s
T = 150°C
J
Fig. 8 - Forward Power Loss CharacteristicsFig. 7 - Forward Power Loss Characteristics
SD453N/R Series
7
Bulletin I2076 rev. A 09/94
www.irf.com
0
20
40
60
80
100
0 400 800 1200 1600 2000
T = 25°C
J
For war d Recovery (V)
T = 150°C
J
S D453N/R ..S 30 Series
Rate Of Rise Of Forward Curren t - di /dt (A/us)
I
V
FP
0.001
0.01
0.1
1
0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
thJC
Transient Thermal Impedance Z (K/W)
St ea d y State Va lue :
R = 0.1 K/W
(DC Ope ra tio n)
thJC
SD453N/R. .S 20/ S30 Se r ie s
0
20
40
60
80
100
0 400 800 1200 1600 2000
T = 2 5 °C
J
Fo rward R ecovery (V)
T = 150°C
J
SD453N/ R..S20 S eries
Rate Of Rise Of Forward Curren t - di /dt (A/us)
I
V
FP
Fig. 15 - Thermal Impedance ZthJC Characteristic
Fig. 16 - Typical Forward Recovery Characteristics Fig. 17 - Typical Forward Recovery Characteristics
100
1000
10000
0.511.522.533.5
T = 25°C
J
Instant aneous For ward Voltage (V)
I nstantane ous Forw ard Cur re nt (A)
T = 1 50° C
J
SD453N /R ..S20 Series
Fig. 14 - Forward Voltage Drop CharacteristicsFig. 13 - Forward Voltage Drop Characteristics
100
1000
10000
0.5 1 1.5 2 2.5 3 3.5 4
T = 2 5°C
J
Instantaneous For war d Voltage (V )
Instantan eous F orward Current (A)
T = 150°C
J
SD453N/ R..S30 Series
SD453N/R Series
8
Bulletin I2076 rev. A 09/94
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1E2
1E3
1E4
1E1 1E2 1E3 1E4
Pulse Basewidth (µs)
50 Hz
200
10000
100
4000
dv / dt = 1000V/us
400
1000
2000
6000
Pe ak Fo rwa rd Curre nt (A )
Sinu soidal Pulse
1500
3000
T = 70 °C, V = 800V
C
RRM
SD 453N/ R..S20 Se ries
tp
600
Fig. 25 - Frequency Characteristics
Fig. 24 - Maximum Total Energy Loss Per Pulse Characteristics
1E2
1E3
1E4
1E1 1E2 1E3 1E4
12
Pulse Basewidth (µs)
Peak Forward Current (A)
1 0 joul e s pe r pu ls e
6
4
d v/d t = 1 000V/µs
Sin usoidal Pu l se
0.6
0.4
0.2
0.1
SD 453N/R. .S20 Series
T = 15 0°C, V = 800V
J
RRM
tp
Fig. 23 - Recovery Current CharacteristicsFig. 22 - Recovery Charge CharacteristicsFig. 21 - Recovery Time Characteristics
2
2.5
3
3.5
4
4.5
5
5.5
6
6.5
7
10 100 1000
Rate Of Fall Of Forward Current - di/dt (A /µs)
Maximum Reverse Recovery Time - Trr (µs)
500 A
150 A
I = 1000 A
Sine Pulse
FM
SD453N/R.. S30 Series
T = 150 °C, V > 100V
Jr
0
200
400
600
800
1000
1200
0 50 100 150 200 250 300
Maximum Reverse Recovery Charge - Q rr (µC)
Rate Of F al l Of Forward Current - di/dt (A/µs)
500 A
150 A
I = 1000 A
Sin e Pu lse
FM
SD453N/R ..S30 Series
T = 150 °C; V > 100V
r
J
0
50
100
150
200
250
300
350
400
450
500
550
0 50 100 150 200 250 300
Max imum Reve rse Rec ove ry Curre nt - Irr (A)
5 00 A
R ate Of Fall O f Forwa rd C urre nt - di/ dt (A/µs)
150 A
I = 1000 A
Si n e Pulse
FM
SD453N/ R..S30 S erie s
T = 150 °C; V > 100 V
Jr
0
50
100
150
200
250
300
350
400
450
0 50 100 150 200 250 300
Maximum Rev erse Reco very Current - Irr (A )
500 A
Rate Of Fall Of Forward Curr ent - di/ dt ( A/µs)
150 A
I = 1000 A
Si ne Pulse
FM
S D453N / R..S 20 Serie s
T = 150 °C; V > 100V
Jr
0
100
200
300
400
500
600
700
800
0 50 100 150 200 250 300
Maximum Reverse Recov e ry Charge - Q rr ( µC)
Rate Of Fall Of Forward Cur rent - di/dt ( A/µs)
500 A
150 A
I = 1000 A
Sine Pulse
FM
SD453N/R. .S 20 Series
T = 150 °C; V > 100V
Jr
2
2.5
3
3.5
4
4.5
5
5.5
6
10 100 1000
Rate Of Fall Of Forward Current - di/dt (A /µs)
Maxi m um Reve rse Rec overy Time - Trr (µs)
500 A
150 A
I = 1000 A
Sine Pulse
FM
SD4 5 3N/R . .S20 Ser i es
T = 150 °C; V > 100 V
Jr
Fig. 18 - Recovery Time Characteristics Fig. 19 - Recovery Charge Characteristics Fig. 20 - Recovery Current Characteristics
SD453N/R Series
9
Bulletin I2076 rev. A 09/94
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1E2
1E3
1E4
1E11E21E31E4
12
Pulse Bas ewidth ( µs)
4
10 joules per pulse
6
Trapezoidal Pulse
Pe ak Fo rwa r d Cu rren t (A )
0.6
0.4
SD453 N/R.. S20 Se ries
dv/dt = 1000V/µs
di/dt = 100 A /µ s
T = 15 0°C, V = 800V
J
RRM
tp
0.2
1E2
1E3
1E4
1E1 1E2 1E3 1E4
Pulse Basewidth (µs)
Trapezoidal Pulse
50 H z100
200400
1000
1500
2000
4000
3000
600
6000
Pe ak Forwa rd Current ( A)
T = 70°C, V = 800 V
dv /dt = 1 00 0 V/u s,
di/dt = 100A/us
RR M
C
SD453N/R ..S 20 S eries
tp
1E2
1E3
1E4
1E1 1E2 1E3 1E4
12
Pulse Basewidth (µs)
Pe ak Forward Current (A)
1 0 j oul e s per pul s e
6
4
dv/dt = 1000V/µs
Sinusoidal Pu ls e
0.8
0.60.4
0.2
SD 453 N/R ...S 3 0 Ser ie s
T = 150°C, V = 800V
J
RRM
tp
0.1
1E2
1E3
1E4
1E1 1E2 1E3 1E4
Pulse Basewidth (µs)
50 H z
200 100
4000
dv/dt = 100 0V/us
400
1000
2000
6000
Peak Forward Current (A)
Sin u soida l Pulse
1500
3000
SD 453N/ R..S30 Series
6000
T = 7 0°C, V = 80 0V
RRM
C
tp
Fig. 30 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 31 - Frequency Characteristics
Fig. 28 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 29 - Frequency Characteristics
1E2
1E3
1E4
1E1 1E2 1E3 1E4
1
2
Pulse B asew idth (µs)
4
10 joules per pulse
6
Trapezoidal Pulse
Pe ak F orward Current (A)
0.8
0.6
SD453N/R..S20 Series
T = 1 50° C, V = 800V
J
RRM
dv/dt = 1000 V/ µs; di / dt = 300A/ µs
tp
0.4
Fig. 26 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 27 - Frequency Characteristics
1E2
1E3
1E4
1E1 1E2 1E3 1E4
Pulse B asewidth (µs)
Trapezoidal Pulse
50 Hz
100200
400
1000
1500
2000
4000
3000
600
6000
Peak Forward Current (A)
SD 453N/ R..S20 Se ries
T = 70°C, V = 800 V
dv/dt = 1000V/us,
di/dt = 300A/us
RRM
C
tp
SD453N/R Series
10
Bulletin I2076 rev. A 09/94
www.irf.com
1E2
1E3
1E4
1E1 1E2 1E3 1E4
Pulse B asewid th (µs)
Tr apezo idal Pul se
50 Hz
100200
400
1000
1500
2000
4000
3000
600
Peak Forward Current (A)
SD453N/R..S30 Series
T = 70°C, V = 800V
dv/dt = 1000V/us,
di /d t = 100A/us
C
RRM
tp
1E2
1E3
1E4
1E1 1E2 1E3 1E4
12
Pulse Basewidth (µs)
4
1 0 joul e s pe r puls e
6
Trapezoidal Pulse
Pe ak Forw ard Cur re nt (A)
SD 453N/ R..S30 Series
T = 150 °C, V = 800V
J
RRM
0.8
0.6
dv /dt = 10 00V /µs; di/dt = 100A/µs
tp
0.4
Fig. 34 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 35 - Frequency Characteristics
1E2
1E3
1E4
1E11E21E31E4
1
2
Pulse B ase width (µs)
4
10 joules per pulse
6
Trape zoid al Puls e
Pe ak F orward Current (A)
0.8
SD453N/R..S30 Series
T = 150°C, V = 800V
J
RRM
0.6
dv/dt = 1000V/µs; di/dt = 300A /µs
tp
1E2
1E3
1E4
1E11E21E31E4
Pulse Basewidt h ( µs)
Trapezoidal Pulse
50 Hz
100
200
400
1000
1500
2000
4000
3000
600
Peak Fo rward Curre nt (A )
dv/dt = 100 0V /u s ,
di/dt = 3 00A/us
T = 70°C, V = 800V
SD453N/R..S30 Series
C
RRM
tp
Fig. 33 - Frequency CharacteristicsFig. 32 - Maximum Total Energy Loss Per Pulse Characteristics
