1
FMV11N90E FUJI POWER MOSFET
Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET
Features
Maintains both low power loss and low noise
Lower RDS (on) characteristic
More controllable switching dv/dt by gate resistance
Smaller VGS ringing waveform during switching
Narrow band of the gate threshold voltage (4.0±0.5V)
High avalanche durability
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum Ratings and Characteristics
Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)
Description Symbol Characteristics Unit Remarks
Drain-Source Voltage V
DS
900 V
V
DSX
900 V V
GS
= -30V
Continuous Drain Current I
D
±11 A
Pulsed Drain Current I
DP
±44 A
Gate-Source Voltage V
GS
±30 V
Repetitive and Non-Repetitive Maximum AvalancheCurrent I
AR
11 A Note*1
Non-Repetitive Maximum Avalanche Energy E
AS
811.9 mJ Note*2
Repetitive Maximum Avalanche Energy E
AR
12 mJ Note*3
Peak Diode Recovery dV/dt dV/dt 2.2 kV/µs Note*4
Peak Diode Recovery -di/dt -di/dt 100 A/µs Note*5
Maximum Power Dissipation P
D
2.16 W Ta=25°C
120 Tc=25°C
Operating and Storage Temperature range T
ch
150 °C
T
stg
-55 to + 150 °C
Outline Drawings [mm]
Equivalent circuit schematic
Electrical Characteristics at Tc=25°C (unless otherwise specified)
Description Symbol Conditions min. typ. max. Unit
Drain-Source Breakdown Voltage BV
DSS
I
D
=250µA, V
GS
=0V 900 - - V
Gate Threshold Voltage V
GS
(th) I
D
=250µA, V
DS
=V
GS
3.5 4.0 4.5 V
Zero Gate Voltage Drain Current I
DSS
V
DS
=900V, V
GS
=0V T
ch
=25°C - - 25 µA
V
DS
=720V, V
GS
=0V T
ch
=125°C - - 250
Gate-Source Leakage Current I
GSS
V
GS
=±30V, V
DS
=0V - 10 100 nA
Drain-Source On-State Resistance R
DS
(on) I
D
=5.5A, V
GS
=10V - 0.83 1.0 Ω
Forward Transconductance g
fs
I
D
=5.5A, V
DS
=25V 6.5 13 - S
Input Capacitance Ciss VDS =25V
VGS=0V
f=1MHz
- 2300 3450
pFOutput Capacitance Coss - 200 300
Reverse Transfer Capacitance Crss - 15 22.5
Turn-On Time td(on) Vcc =600V
V
GS
=10V
I
D
=5.5A
R
G
=20Ω
- 37 56
ns
tr - 32 48
Turn-Off Time td(off) - 124 186
tf - 34 51
Total Gate Charge Q
G
V
cc
=450V
I
D
=11A
V
GS
=10V
- 60 90
nC
Gate-Source Charge Q
GS
- 17 26
Gate-Drain Charge Q
GD
- 23 35
Gate-Drain Crossover Charge Q
SW
- 7 11
Avalanche Capability I
AV
L=4.92mH, T
ch
=25°C 11 - - A
Diode Forward On-Voltage V
SD
I
F
=11A, V
GS
=0V, T
ch
=25°C - 0.90 1.35 V
Reverse Recovery Time trr I
F
=11A, V
GS
=0V
-di/dt=100A/µs, Tch=25°C
- 2.0 - µS
Reverse Recovery Charge Qrr - 20 - µC
Note *1 : Tch≤150°C
Note *2 : Stating Tch=25°C, I
AS
=4.4A, L=76.9mH, Vcc=90V, R
G
=10Ω
E
AS
limited by maximum channel temperature and avalanche current.
See to 'Avalanche current' graph.
Thermal Characteristics
Description Symbol Test Conditions min. typ. max. Unit
Thermal resistance Rth (ch-c) Channel to case 1.0417 °C/W
Rth (ch-a) Channel to ambient 58.0 °C/W
Gate(G)
Source(S)
Drain(D)
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.
See to the 'Transient Themal impeadance' graph.
Note *4 : I
F
≤-I
D
, -di/dt=100A/µs, Vcc≤BV
DSS
, Tch≤150°C.
Note *5 : I
F
≤-I
D
, dv/dt=2.2kV/µs, Vcc≤BV
DSS
, Tch≤150°C.
TO-220F(SLS)
2
FMV11N90E
2
FUJI POWER MOSFET
0 25 50 75 100 125 150
0
50
100
150
200
Allowable Power Dissipation
PD=f(Tc)
]
W[
DP
Tc [°C]
0.1 1 10 100
0.1
1
10
100
]S[ s
f
g
ID [A]
Typical Transconductance
gfs=f(ID):80
μs pulse test,VDS=25V,Tch=25°C
10-1 100101102103
10-2
10-1
100
101
102
t
PD
Power loss wave form :
Square waveform
t
PD
t
PD
Power loss wave form :
Square waveform
]A
[
D
I
VDS [V]
Safe Operating Area
ID=f(VDS):Duty=0(Single pulse),Tc=25 °c
t=
1μs
10μs
1ms
100μs
0 4 8 12 16 20 24
0
5
10
15
20
10V
6.0V
7.0V
6.5V
]
A[ D
I
VDS [V]
Typical Output Characteristics
ID=f(VDS):80
μs pulse test,Tch=25 °C
VGS=5.5V
0 1 2 3 4 5 6 7 8 9 10
0.1
1
10
100
]A
[
DI
VGS[V]
Typical Transfer Characteristic
ID=f(VGS):80 μs pulse test,VDS=25V,Tch=25 °C
0 5 10 15 20
0.6
0.8
1.0
1.2
1.4
1.6
1.8
20V
6V
[ )n
o
(S
DR Ω]
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80
μs pulse test,Tch=25°C
10V
7V
6.5V
VGS=5.5V
3
3
FUJI POWER MOSFET
FMV11N90E
-50 -25 0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
[
)no
(S
DR Ω]
Tch [°C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=5.5A,VGS=10V
-50 -25 0 25 50 75 100 125 150
0
1
2
3
4
5
6
7
8
typ.
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250μA
]V[
)
ht(SGV
Tch [°C]
10-2 10-1 100101102
100
101
102
103
104
]Fp[ C
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00 0.25 0.50 0.75 1.00 1.25 1.50
0.01
0.1
1
10
100
]
A[
F
I
VSD [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80
μs pulse test,Tch=25 °C
10-1 100101102
100
101
102
103
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=600V,VGS=10V,RG=20Ω
td(on)
tr
tf
td(off)
]sn
[
t
ID [A]
0 20 40 60 80 100
0
2
4
6
8
10
12
14
Qg [nC]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=11A,Tch=25°C
]V[ SGV
720V
450V
Vcc= 120V
4
FMV11N90E
4
FUJI POWER MOSFET
10-6 10-5 10-4 10-3 10-2 10-1 100
10-3
10-2
10-1
100
101
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
]W
/
C°[ )c-hc(htZ
t [sec]
0 25 50 75 100 125 150
0
100
200
300
400
500
600
700
800
900
IAS=4.4A
IAS=6.6A
IAS=11A
]Jm[ V
AE
starting Tch [°C]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=90V,I(AV)<=11A
5
5
FUJI POWER MOSFET
FMV11N90E
WARNING
1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this
Catalog, be sure to obtain the latest specifications.
2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either
express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Device
Technology Co., Ltd. is (or shall be deemed) granted. Fuji Electric Device Technology Co., Ltd. makes no representation or
warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which
may arise from the use of the applications described herein.
3. Although Fuji Electric Device Technology Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor
products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take
adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products
become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction.
4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has
normal reliability requirements.
• Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment
• Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc.
5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed
below, it is imperative to contact Fuji Electric Device Technology Co., Ltd. to obtain prior approval. When using these products for
such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's
product incorporated in the equipment becomes faulty.
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• Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature
• Emergency equipment for responding to disasters and anti-burglary devices • Safety devices
• Medical equipment
6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic
equipment (without limitation).
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• Submarine repeater equipment
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No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Device
Technology Co., Ltd.
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using the product.
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accordance with instructions set forth herein.
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