LS4148/LS4448/LS914B 500mW High Speed SMD Switching Diode Small Signal Diode QUADRO Mini-MELF (LS34) HERMETICALLY SEALED GLASS C Features Fast switching device(Trr<4.0nS) Surface device type mounting B Moisture sensitivity level 1 D E Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant All External Surfaces are Corrosion Resistant and Leads are Readily Solderable A Unit (mm) Unit (inch) Min Max Min A 3.30 3.70 0.130 0.146 Dimensions Mechanical Data Case : QUADRO Mini-MELF Package (JEDEC DO-213) Max High temperature soldering guaranteed : 270C/10s B 1.40 1.60 0.055 0.063 Polarity : Indicated by cathode band C 0.25 0.40 0.010 0.016 Weight : 29 2.5 mg D 1.25 1.40 0.049 0.055 E 1.80 0.071 Ordering Information Part No. Package Packing LSxxxx L1 QUADRO Mini-MELF 2.5Kpcs / 7" Reel LSxxxx L0 QUADRO Mini-MELF 10Kpcs / 13" Reel Maximum Ratings and Electrical Characteristics Rating at 25C ambient temperature unless otherwise specified. Maximum Ratings Symbol Value Units PD 500 mW Non-Repetitive Peak Reverse Voltage VRSM 100 V Repetitive Peak Reverse Voltage VRRM 75 V Peak Forward Surge Current IFSM 2 A Non-Repetitive Peak Forward Current IFM 450 mA Mean Forward Current IO 150 mA RJA 300 C/W TJ, TSTG -65 to + 200 C Type Number Power Dissipation Thermal Resistance (Junction to Ambient) (Note 1) Junction and Storage Temperature Range Electrical Characteristics Type Number Reverse Breakdown Voltage Symbol IR=100uA IR=5uA V(BR) Min Max 100 - 75 - 0.62 0.72 - 1.0 - 1.0 Units V Forward Voltage LS4448, LS914B IF=5.0mA LS4148 IF=10.0mA LS4448, LS914B IF=100.0mA Reverse Leakage Current Junction Capacitance Reverse Recovery Time (Note 2) VR=20V VR=75V VR=0, f=1.0MHz VF V - 25 nA - 5.0 A CJ - 4.0 pF Trr - 4.0 ns IR Notes:1. Valid provided that electrodes are kept at ambient temperature Notes:2. Reverse Recovery Test Conditions: IF=IR=10mA, RL=100, IRR=1mA Version : C09 LS4148/LS4448/LS914B 500mW High Speed SMD Switching Diode Small Signal Diode Rating and Sharacteristic Curves FIG 1 Typical Forward Characteristics FIG 2 Reverse Current vs Reverse Voltage Instantaneous Forward Current (A) 100 100 Reverse Current (uA) 10 1 Ta=25C 0.1 10 Ta=25C 1 0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 1 1.2 Instantaneous Forward Volatge (V) 1.4 1.6 0.01 0 40 60 80 Reverse Volatge (V) 100 120 FIG 4 Typical Junction Capacitance FIG 3 Admissible Power Dissipation Curve 1.5 Junction Capacitance (pF) 500 Power Dissipation (mW) 20 400 300 200 100 0 1.2 0.9 0.6 0.3 0 0 25 50 75 100 125 150 175 200 0 5 10 15 20 25 30 Reverse Voltage (V) Ambient Temperature (C) FIG 5 Forward Resistance vs. Forward Current Dynamic Forward Resistance () 10000 1000 100 10 1 0 0 1 Forward Current (mA) 10 100 Version : C09