RIL SPECS WHE D MM O0003be5 0034298 T9493 MEMILS | the documentation and process conversion |measures necessary to comply with this [revision shall be completed by 10 Mar 94. Lo INCH-POUND| MIL-S-19500/359D 10 December 1993 SUPERSED ING MIL-S-19500/359C 27 February 1992 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, FAST RECOVERY, POWER RECTIFIER, 1N4942, 1NG944, 1N4946, 1N4947, AND 1N4948 JAN, JANTX, AND JANTXV Inactive for new design after 27 February 1992 for For new design use - 1N5615, 1N5617, 1N5619, 1N5621, 1N5623 on MIL-S-19500/429. 1. SCOPE 1.1 Scope. This specification covers the detail requirements for a silicon, fast recovery semiconductor power rectifier diode for use in equipment circuits. Three levels of product assurance are provided for each device as specified in MIL-S-19500. 1.2 Physical dimensions. See figure 1. (Similar to 00-41) 1.3 Maximum ratings. | | | | | | | |Device |v |i, 1/ 2/ | 1, 2/ | 1 at {Barometric |t | T and itype Vp iT, = +55C IT, = +100 |t F333 ms | pressure | rot | $78 Pp | | | | [TR = #100C | it, | Top | | | | | | | [= O.S A | | | | | | II, | | | | | | | j= 1.0A | | I | | ="6C25 a | | | | | V_pk Ade Ade | Apk | mig ns sO ite | | | |1N4942 | 200 1.0 .750 | 45 | 150 -65 to +175 | 1N4944 400 1.0 -750 | 15 | 8 150 -65 to +175 |1N4946 | 600 1.0 .750 | 45 | 8 250 |-65 to +175 | |1N4947 800 1.0 -750 | 15 { 33 250 -65 to +175 | |1N4948 | 1000 1.0 .750 | 15 | 33 500 -65 to +175 | | | 4/ Derate Linearly from 1.0 A at T, = +55C to 0.75 A at +100C. Derate Linearly from 0.75 A to 0 A between +100C and +175C. 2/ No forced air nor heat sinking shall be permitted for I, ratings at T, = +55C and +100C. [Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in | |impreving this document should be addressed to: Commander, Defense Electronics Supply Center, ATTN: [DESC-ECT, 1507 Wilmington Pike, Dayton, OH 45444-5270 by using the Standardization Document Proposal {COO Form 1426) appearing at the end of this document or by letter. AMSC N/A FSC 5961 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.MIL SPECS 44E D MM 0000325 0034295 J2T MBMILS MIL-S-19500/359D Dimensions Ltr | Inches Millimeters Notes | | Min Max Min Max 8 027 .033 0.69 0.84 go {| .065 150 1.65 3.81 3 G | 140 250 3.56 6.35 3 L 11.000 4.500 | 25.40 | 38.10 1. Oimenstons are in inches. 2. Metric equivalents are given for general information only. 3. Dimension G and $0 include all components of the diode periphery except the section of leads over which the diameter is controlled. 4. Dimension @O shall be measured at the largest diameter. FIGURE 1. Physical dimensions.MIL SPECS HOHE D MM OO00be5 0034300 471 MENMILS MIL-S-19500/359D 2. APPLICABLE DOCUMENTS 2.1 Government documents. 2.1.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those Listed in the issue of the Department of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation. SPECIFICATION MILITARY MIL-S-19500 - Semiconductor Devices, General Specification for. STANDARDS MILITARY MIL-STD-750 - Test Methods for Semiconductor Devices. (Unless otherwise indicated, copies of federal and military specifications, standards, and handbooks are available from the Standardization Document Order Desk, Building 40, 700 Robbins Avenue, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 -Associated detail specification. The individual item requirements shall be in accordance with MIL-S-19500, and as specified herein. 3.2 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-S-19500. Toye TOT TTT Temperature coefficient of forward voltage 3.3 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-S-19500 and on figure 1 herein. All devices shall be metallurgically bonded-thermal Ly-matched-noncavity-double plug construction as defined in M1L-S-19500. 3.3.1 Encapsulant material. In addition to those categories of hermetically sealed package requirements specified in MIL-S$-19500, fused metal oxide-to-metal shall also be acceptable. 3.3.2 Lead finish. Lead finish shall be solderable in accordance with MIL-S-19500, and as specified herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document. 3.4 Marking. Marking shall be in accordance with MIL-S-19500. 3.5 Polarity. The polarity of all types shall be indicated with a contrasting color band to denote the cathode end. 4. QUALITY ASSURANCE PROVISIONS 4.1 Sampling and inspection. Sampling and inspection shall be in accordance with MIL-S-19500, and as specified herein.MIL SPECS OE D MM 0000125 0034301 308 MEMILS MIL-S-19500/3590 4.2 Screening (JANTX and JANTXV Levels). Screening shall be in accordance with MIL-S-19500 (table II), and as specified herein. The following measurements shail be made in accordance with table I herein. Devices that exceed the Limits of table I herein shall not be acceptable. | i Screen (see Measurement table I! of MIL-S-19500) JANTX and JANTXV levels 9 Not applicable | | 11 Ipq and Vews | 12 See 4.2.1 and 4.5.3 13 Subgroup 2 of table I herein: | | Alp, = 100 percent of initial - | | | reading or 50 nA de whichever is | | greater. | AVew, = 40.1 V de, -0.2 V de Scope display evaluation (see 4.5.4). 4.2.1 Power burn-in conditions. Power burn-in conditions are as follows: Ty = room ambient as defined in the general requirements of paragraph 4.5 of MIL-STD-750; Vp = Vay rated (see 1.3); F = 50-60 Hz; I, = 1.0 Adc. 4.3 Qualification inspection. Qualification inspection shall be in accordance with MIL-S-19500. 4.3.1 Group E inspection. Group E inspection shall be conducted in accordance with MIL-S-19500 and table Il herein. 4.4 Quality conformance inspection. Quality conformance inspection shall be in accordance with MIL-S-19500. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-S-19500, and table I herein. 4.4.2 Group B inspection. Group 8 inspection shall be conducted in accordance with the conditions specified for subgroup testing in table IVb (JANTX and JANTXV) of MIL-S-19500. Electrical measurements (end-points) shall be in accordance with table I, group A, subgroup 2 herein (see subgroup conditions for delta limits when applicable). 4.4.2.1 Group B inspection, table [Vb (JAN, JANTX, and JANTXV of MIL-S-19500). Subgrou Method Condition B2 4066 Teoy = rated (.ee 1.3); 10 surges of 8.3 ms each at 7-minute intervals; Ig = 0.75 A de; Vesm = 0. 83 1027 I, = 1.0 A de minimum; f = 50-60 Hz; T, = room ambient as defined in the general requirements of paragraph 4.5 of MIL-STO-750. V, = rated Vauy (see 1.3, 4.5.3, and 4.5.3.1); t 2 340 hours. Delta limits: AI, = 100 percent or 50 nA, whichever is greater. 85 3101 R = 38C/W; L = .375 inch (9.52) - or J 4081 outMIL SPECS WHE D MM 0000125 003430e 244 MENILS MIL-S-19500/359D 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table V of MIL-S-19500. Electrical measurements (end-points) shall be in accordance with table I, group A, subgroup 2 herein (see subgroup conditions for delta Limits when applicable). 4.4.3.1 Group C inspection, table V of MIL~s-19500. Subgrou Method Condition c2 1056 Test Condition A C2 2036 Tension: Test Condition A, weight = 5 pounds; t = 15 seconds. c2 1021 Omit initial conditioning Delta Limits: AV, = -0.2 minimum and +0.1 maximum; Al, = 100 percent or 50 nA, whichever is greater. cS Not applicable c 1026 T, = room ambient as defined in the general requirements of paragraph 4.5 of MIL-STO-750; f = 50-60 Hz; 1, = 1.0 A minimum; Vp = rated Voi (see 1.3, 4.5.3, and 4.5.3.1) 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in table VII of MIL-S-19500. 4.4.4.1 Group E inspection, table VII of MIL-S-19500. Subgrou Method Condition hs) 1001 1N4944, 1n4946 = 8 am Hg (100,000 ft) 1N4947, 104948 = 33 mm Hg (70,000 ft) Voltage during test = Vouy; maxinun leakage (Ip) during test shall be 5 pA. 4.5 Methods of inspection. Methods of inspection shall be specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 4.5.2 Inspection conditions. Unless otherwise specified, all inspections shall be conducted at an ambient temperature T, of +25C 3C. 4.5.3 Burn-in and Life tests. These tests shall be conducted with a half-sine waveform of the specified peak voltage impressed across the diode in the reverse direction followed by a half-sine waveform of the specified average rectified current. The forward conduction angle of the rectified current shall be neither greater than 180 degrees, nor less than 150 degrees. 4.5.3.1 Alternate mounting conditions. At the option of the manufacturer, any clips or heat sink mounting configurations may be utilized provided that I, is increased such that the junction temperature of each diode is maintained at +145C minimun. 4.5.4 Scope display evaluation. The reverse breakdown characteristics shall be viewed on an oscilloscope with display calibration factors of 10 to 50 pA/division and 50 to 200 V/division. Reverse current over the knee shall be at least 10 iA and less than SO uA peak. Any discontinuity below actual breakdown or dynamic instability of the trace shall be cause for rejection of that device.MIL SPECS WHE D M@@ 0000125 0034303 1460 MBNILS MIL~S*19500/3590 TABLE 1. Group A_inspection. Inspection MIL-STO-750 Symbol ___ Limits unit VV ~ Method Conditions Min Max Subgroup 1 Visual and mechanical 2071 Subgroup 2 | | Forward voltage 4011 Leyq = 1.0 A de Vem 0.6 1.3 V de pulsed (see 4.5.1) Reverse current Leakage 4016 Vp = rated Vay Tp4 1.0 HA (see 1.3) pulsed (see 4.5.1) Breakdown voltage 4021 I, = 50 LA v pulsed (see 4.5.1) (BR) 1N4942 220 V de ING944 440 V de 1N49L6 660 V de 1N46947 880 V de 1N4948 . 1100 V de Subgroup 3 Te +150C High temperature operation Reverse current 4016 Vp = rated Yew Ipo 200 HA leakage (see 1.3) pulsed (see 4.5.1) Low temperature Ty = -65C operation Forward voltage 4011 py = 1 A de Vem2 0.6 1.5 V de pulsed (see 4.5.1) Reverse current 4016 Vv, = rated Vaum Tas 1.0 MA de (see 1.3); dc method See footnote at end of table.MIL SPECS WHE D MM 0000125 0034304 017 MENILS MIL-S-19500/3590 TABLE I. Group A_inspection - Continued. | | | | | Inspection MIL-STD-750 | Symbol | Limits | Unit | Vv | | | | Method Conditions | [Min | Max | | | | Subgroup _4 | | | | | | | | | |Forward recovery | 4026 [IF = 0.25 A; t, = 20 ns | Ven | | 5.0 | Vv | voltage | |(minimum); t, = 8 ns | | | | | | | | | Capacitance | 4001 Vp = 12 V de cy f = 0.1 to 1 MHz 1N4962 45 pF ANG944 35 pF 1NG946 25 pF ANG947 20 pF 1N4948 15 pF | Reverse recovery time 4031 Condition 81 tard 1N4942 150 ns 1N4944 150 ns 1N4946 250 ns NG9S? . . 250 ns 1N4948 500 ns Subgroups 5, 6, and 7 Not applicable L 1/ For sampling plan, see MIL-S-19500.MIL SPECS WHE D MMB 0000125 0034305 753 MHNILS MIL-3-19500/359D TABLE II. Group inspection for (ail quality levels) for qualification only. | | | | Inspection | MIL-STD~750 Sampling plan | | | | | | Method | Conditions | | | | | | Subgroup 1 | | 22 devices | | | | c=0 | [Thermal shock (glass | 1056 {500 cycles, condition A | strain) | | | | | | Hermetic seal | 1071 | { Gross Leak | | | Electrical measurements See table I, group A, subgroup 2 | Subgroup 2 22 devices | c=0 | |Blocking life 1038 80 to 85% of rated Ya, Ta = 150C, | | t = 1,000 hours minimum | Electrical measurements See table I, group A, subgroup 2 | | Subgroup 3 | | Not applicable | | Subgroup 4 22 devices | | =0 | Thermal resistance 31017 or |R = 38C/W maximum; L = .375 inch (9.52) eJL 4081 | | Subgroup 5 22 devices | =0 | Barometric pressure 1001 1N4944, 1N4946 = 8 mm Hg (100,000 ft) | (reduced) 1N4947, 1N4948 = 33 mmHg (70,000 ft) | | | [Voltage during test = V wae Maximum leakage | (Ip) during test shall Re 5 BA. Subgroups 6 and 7 | | |Not applicable |MIL SPECS GUE D @@ 0000125 0034306 99T MMMILS MIL-S-19500/359D 5. PACKAGING 5.1 Packaging requirement. The requirements for packaging shalt be in accordance with MIL~S-19500. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 Notes. The notes specified in MIL-S-19500 are applicable to this specification. 6.2 Acquisition requirements. Acquisition documents must specify the following: a. Issue of DODISS to be cited in the solicitation, and if required, the specific issue of individual documents referenced (see 2.1). b. Lead finish as specified (see 3.3.1). c. Type designator and quality assurance Level. 6.3 Substitution information. Devices covered by this specification are substitutable for the manufacturer's and user's PIN. This information in no way implies that manufacturers Part or Identifying Numbers are suitable as substitutes for the military PINs. oe CONCLUDING MATERIAL Custodians: Preparing activity: Aray - ER Air Force - 17 Navy - EC Air Force - 17 Agent: DLA - ES Review activities: Army - AR, MI, SM (Project 5961-1543) Navy - AS,.CG, MC Air Force - 19, 70, 85 DLA - ES