il HEWLETT (hp; PACKARD COMPONENTS SCHOTTKY BARRIER DIODES FOR DETECTORS 6082-2750/51 5082-2755 6082-2787 5082-2824 Features IMPROVED DETECTION SENSITIVITY TSS OF -55 dBm at 10 GHz LOW 1/f NOISE Typical Noise-Temperature Ratio = 4 dB at 1 kHz HIGH PEAK POWER DISSIPATION 4.5 W RF Peak Pulse Power Description /Applications The low 1/f noise and high voitage sensitivity make these Schottky barrier diodes ideally suitable for narrow bandwidth video detectors, and Doppler mixers as required in Doppler radar equipment, ECM receivers, and measurement equipment. Maximum Ratings at Tease =25C Junction Operating and Storage Temperature Range 5082-2824 11... cee -65C to +200C AllOthers 2.2... cece ccc cee eee -60C to+150C Operation of these devices within the above temperature ratings will assure a device Mean Time Between Failure (MTBF) of approximately 1 x 107 hours. DC Power Dissipation Power Absorbed by Diode Derate Linearly to zero at Maximum Temperature 5082-2824 (Appliedfor 1 minute) ............ 1wW 5082-2824 (Continuous) ............000- 250 mW AllOthers(Continuous) .............006- 100 mW SolderingTemperature .............06. 230C for 5 sec. RF Peak Pulse Power Pulse Width = 1 ys, Du = .001, R, = 38K 22 (Applied for 1 minute) 5082-2824 (Power Absorbed by Diode) ..... 4.5W All Others (Power Incident) ................ 2.0W Maximum Peak Inverse Voltage (PIV) ............... Ver. Note: The 2700 series diodes are pulse sensitive. Handle with care to avoid static discharge through the diode. Package Dimensions SCHOTTKY BARRIER DIODES & HIGH CONDUCTANCE DIODES 3 109 110 Electrical Specifications at Ty = 25C Typical Parameters *RF Parameters for the 5082-2787 are sample tested only. Figure 1. Typical Flicker (1/f) Noise vs. Frequency. Figure 2. Typical Dynamic Transfer Characteristic. (5082-2750 Series). Figure 3. Typical TSS vs. Frequency. Figure 4. Typical TSS vs. Bias. Figure 5. Typical Forward Characteristics at Ta = 25C. Figure 6. Typical Admittance Characteristics, 5082-2824 with external bias. SCHOTTKY BARRIER DIODES & HIGH CONDUCTANCE DIODES Figure 7. Typical Admittance Characteristics, 5082-2755 Figure 8. Typical Admittance Characteristics, 5082-2755 with external bias. with self bias. 111 Figure 9. Typical Admittance Characteristics, 5082-2751 Figure 10. Typical Admittance Characteristics, 5082-2751 with self bias. with external bias. Figure 11. Typical Admittance Characteristics, 5082-2750 Figure 12. Typical Admittance Characteristics, 5082-2750 with self bias. with external bias. 112