PNP SILICON TRANSISTORS, PLANAR TRANSISTORS PNP SILICIUM, PLANAR 2N 1131 2N 1132 - General use Usage gnral - Small signal LF amplification Amplification BF petits signaux Maximum power dissipation Dissipation de puissance maximale Prot we] I 15 i N ' I (2) 1 v ' i (1) 05 7 \ (Tera o ' {2} Tease! 0 50 100 160 200 VcEo -35 V 20-45 2N 1131 hate (180 MA). og oN 1132 Case TO-39 See outline drawing CB-7 on last pages Boitier Voir dessin cot CB-7 dernidres pages c f B Weight : 0,9 g. Collector is connected to case Masse Le collecteur est reli au boftier ABSOLUTE RATINGS (LIMITING VALUES) VALEURS LIMITES ABSOLUES DUTILISATION Tamb = +25 C (Unless otherwise stated) (Saut indications contraires} 2N 1131 2N 1132 Collector-base voltage Tension collecteur-base VcBo 50 Vv Coltector-emitter voltage Tension collectour-mettecr Ree <102 Voce R 50 v Collector-emitter volta Tension collecteur-rmettenr VcEo 35 Vv Emitter-base voltage Tension metteur-base Veso 5 Vv Coltector current Courant collecteur ic 600 mA Power dissipation Tamb 25C (1) P. 06 w Dissipation de puissance Tease 25C (2) tot 2 w Junction temperature Temprature de jonction max. Tj 175 c Storage temperature min. T 65 c Temprature de stockage max. stg +200 C OL rorcose DMSSION SEMICONOUCTEURS. Sesesemn 76-09 1/3 131 2N1131, 2N 1132 STATIC CHARACTERISTICS CARACTERISTIQUES STATIQUES Tamb = 25C (Unless otherwise stated) {Sauf indications contraires) Test conditions Conditions de mesure Min, Typ. Max. Van =30V cB = t1 BA lp = 0 Collector-base cut-off current lego Courant rsiduel collecteur-base V =~30V cB le = 0 100 BA Tomb= 150C . Vv =2V Emitter-base cut-off current EB 1 _ Courant rsiduel metteur-base \o = EBO 100 HA Collector-base breakdown voltage lo = -100KA Tension de claquage collecteur-base le =0 vi BR)CBO 50 Vv Reg = 102 * BE Vv 50 le =-100mA (BR)CER v Collector-emitter breakdown voltage Tension de claquage collecteur-metteur le = 100 mA * ip = V(BR)CEO 35 v Emitter-base breakdown voltage ig =100HA Vv 5 Tension de claquage metteur-base le = (BR)EBO - v 2N 1132 15 Vee = -10V I =5mA c 2N 1132 Static forward current transfer ratio * 25 Valeur statique du rapport de transfert ho4 & direct du courant 2N 1131 20 4S VcE =-10V t =~150 mA Cc 2N 1131 30 90 . . ! = ~-150 mA Collector-emitter saturation voltage c Tension de saturation collecteurmetteur || = 15mA Voesat 1,5 Vv Base-emitter saturation voltage lo = 150mA Vv Tension de saturation base-6metteur Ip = 15 mA BEsat -13 Vv * Pulsed t, =300us & <2% impulsions P 2/3 132 2N 1131, 2N 1132 DYNAMIC CHARACTERISTICS T. b = 25C (Unless otherwise stated} CARACTERISTIQUES DYNAMIQUES am (Sauf indications contrairas} Test conditions i Conditions de mesure Min. Typ. Max. Voge = -8V 2N 1131 | 15 50 Ilo =-1mA fo =1kHz 2N 1132 | 25 100 Forward current transfer ratio hote Rapport de transfert direct du courant Voge = 710V 2N 1131 20 lo = 5 mA f = 1 kHz 2N 1132 30 Veg =7-5V Ic =-1mA 25 35 a f = 1 kHz Input impedance hat Impdance dentre Vog =10V Iq =-5mA 10 Q f =1kHz Veg =-5V 4 le =-TmA 8 10 f =1kHz Reverse voltage transfer ratio h Rapport de transfert inverse de la tension 12b Veg = -10V 4 lo =-5mA 8 10 f = 1 kHz Vop =75V le = 1 mA 1 us f = 1 kHz Output admittance hoo5 Admittance de sortie Veg = 10V le =-5 mA 5 us f 1 kHz see Voge =-10V 2N 1131 50 MHz Transition frequency : f Frquence de transition lo =50mA T f = 10MHz 2N 1132 | 60 MHz Vv =-10V Output capacitance cB Capacit de sortie le =0 C22p 45 pF f = 1 MHz Input capacitance Veg =05V c Capacit dentre lq =0 1b 80 pF f =1MHz 3/3 133