IPAN80R280P7 MOSFET 800VCoolMOSP7PowerTransistor PG-TO220FP Thelatest800VCoolMOSTMP7seriessetsanewbenchmarkin800V superjunctiontechnologiesandcombinesbest-in-classperformancewith stateoftheartease-of-use,resultingfromInfineon'sover18years pioneeringsuperjunctiontechnologyinnovation. Features *Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss *Best-in-classDPAKRDS(on) *Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof0.5V *IntegratedZenerDiodeESDprotection *Fullyqualifiedacc.JEDECforIndustrialApplications *Fullyoptimizedportfolio Drain Pin 2, Tab Benefits Gate Pin 1 *Best-in-classperformance *Enablinghigherpowerdensitydesigns,BOMsavingsandlower assemblycosts *Easytodriveandtoparallel *BetterproductionyieldbyreducingESDrelatedfailures *Lessproductionissuesandreducedfieldreturns *Easytoselectrightpartsforfinetuningofdesigns Source Pin 3 Potentialapplications RecommendedforhardandsoftswitchingflybacktopologiesforLED Lighting,lowpowerChargersandAdapters,Audio,AUXpowerand Industrialpower.AlsosuitableforPFCstageinConsumerapplications andSolar. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj=25C 800 V RDS(on),max 0.28 Qg,typ 36 nC ID 17 A Eoss @ 500V 4 J VGS(th),typ 3 V ESD class (HBM) 2 - Type/OrderingCode Package IPAN80R280P7 PG-TO 220 FullPAK Narrow Lead Final Data Sheet Marking 80R280P7 1 RelatedLinks see Appendix A Rev.2.1,2018-02-07 800VCoolMOSP7PowerTransistor IPAN80R280P7 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Final Data Sheet 2 Rev.2.1,2018-02-07 800VCoolMOSP7PowerTransistor IPAN80R280P7 1Maximumratings atTj=25C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 17 10.6 A TC=25C TC=100C - 45 A TC=25C - - 43 mJ ID=2.2A; VDD=50V EAR - - 0.36 mJ ID=2.2A; VDD=50V Avalanche current, repetitive IAR - - 2.2 A - MOSFET dv/dt ruggedness dv/dt - - 100 V/ns VDS=0to400V Gate source voltage VGS -20 -30 - 20 30 V static; AC (f>1 Hz) Power dissipation Ptot - - 30 W TC=25C Operating and storage temperature Tj,Tstg -55 - 150 C - Mounting torque - - - 50 Ncm M2.5 screw IS - - 7 A TC=25C IS,pulse - - 45 A TC=25C dv/dt - - 1 V/ns VDS=0to400V,ISD<=3.6A,Tj=25C Maximum diode commutation speed dif/dt - - 50 A/s VDS=0to400V,ISD<=3.6A,Tj=25C Insulation withstand voltage VISO - - 2500 V Vrms,TC=25C,t=1min Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Avalanche energy, single pulse EAS Avalanche energy, repetitive Continuous diode forward current 2) Diode pulse current 3) Reverse diode dv/dt 3) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Min. Typ. Max. RthJC - - 4.1 C/W - Thermal resistance, junction - ambient RthJA - - 80 C/W leaded Thermal resistance, junction - ambient RthJA for SMD version - - - C/W n.a. Soldering temperature, wavesoldering only allowed at leads - - 260 C Tsold 1.6 mm (0.063 in.) from case for 10s 1) TO220 equivalent. Limited by Tj max. Maximum duty cycle D=0.5 Pulse width tp limited by Tj,max 3) VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG;tcond<2s 2) Final Data Sheet 3 Rev.2.1,2018-02-07 800VCoolMOSP7PowerTransistor IPAN80R280P7 3Electricalcharacteristics atTj=25C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3 3.5 V VDS=VGS,ID=0.36mA - 10 1 - A VDS=800V,VGS=0V,Tj=25C VDS=800V,VGS=0V,Tj=150C - - 1 A VGS=20V,VDS=0V Min. Typ. Max. V(BR)DSS 800 - Gate threshold voltage VGS(th) 2.5 Zero gate voltage drain current IDSS Gate-source leakage curent incl. zener IGSS diode Drain-source on-state resistance RDS(on) - 0.24 0.62 0.28 - VGS=10V,ID=7.2A,Tj=25C VGS=10V,ID=7.2A,Tj=150C Gate resistance RG - 1 - f=250kHz,opendrain Unit Note/TestCondition Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 1200 - pF VGS=0V,VDS=500V,f=250kHz Output capacitance Coss - 20 - pF VGS=0V,VDS=500V,f=250kHz Effective output capacitance, energy related1) Co(er) - 38 - pF VGS=0V,VDS=0to500V Effective output capacitance, time related2) Co(tr) - 490 - pF ID=constant,VGS=0V,VDS=0to500V Turn-on delay time td(on) - 10 - ns VDD=400V,VGS=13V,ID=7.2A, RG=4.7 Rise time tr - 6 - ns VDD=400V,VGS=13V,ID=7.2A, RG=4.7 Turn-off delay time td(off) - 40 - ns VDD=400V,VGS=13V,ID=7.2A, RG=4.7 Fall time tf - 5 - ns VDD=400V,VGS=13V,ID=7.2A, RG=4.7 Unit Note/TestCondition Table6Gatechargecharacteristics Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 5 - nC VDD=640V,ID=7.2A,VGS=0to10V Gate to drain charge Qgd - 15 - nC VDD=640V,ID=7.2A,VGS=0to10V Gate charge total Qg - 36 - nC VDD=640V,ID=7.2A,VGS=0to10V Gate plateau voltage Vplateau - 4.5 - V VDD=640V,ID=7.2A,VGS=0to10V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to500V Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to500V 2) Final Data Sheet 4 Rev.2.1,2018-02-07 800VCoolMOSP7PowerTransistor IPAN80R280P7 Table7Reversediodecharacteristics Parameter Symbol Diode forward voltage Values Unit Note/TestCondition - V VGS=0V,IF=7.2A,Tf=25C 1200 - ns VR=400V,IF=3.6A,diF/dt=50A/s - 15 - C VR=400V,IF=3.6A,diF/dt=50A/s - 24 - A VR=400V,IF=3.6A,diF/dt=50A/s Min. Typ. Max. VSD - 0.9 Reverse recovery time trr - Reverse recovery charge Qrr Peak reverse recovery current Irrm Final Data Sheet 5 Rev.2.1,2018-02-07 800VCoolMOSP7PowerTransistor IPAN80R280P7 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Safeoperatingarea 102 35 10 s 100 s 1 s 1 ms 30 10 ms 101 DC 100 20 ID[A] Ptot[W] 25 15 10-1 10 10-2 5 0 0 25 50 75 100 125 10-3 150 100 101 102 TC[C] 103 VDS[V] Ptot=f(TC) ID=f(VDS);TC=25C;D=0;parameter:tp Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 2 101 10 100 s 10 s 1 s 1 ms 10 ms 101 0.5 DC 100 0.1 ID[A] ZthJC[K/W] 100 10-1 0.2 0.05 0.02 10-1 0.01 single pulse 10-2 10-3 100 101 102 103 10-2 10-5 10-4 10-3 VDS[V] ID=f(VDS);TC=80C;D=0;parameter:tp Final Data Sheet 10-2 10-1 100 tp[s] ZthJC=f(tP);parameter:D=tp/T 6 Rev.2.1,2018-02-07 800VCoolMOSP7PowerTransistor IPAN80R280P7 Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics 60 35 20 V 10 V 8V 50 20 V 10 V 8V 30 7V 6V 25 7V 6V 40 5.5 V 30 ID[A] ID[A] 20 5.5 V 5V 15 4.5 V 20 10 0 0 5 10 5V 10 4.5 V 5 15 0 20 0 5 10 VDS[V] 15 20 VDS[V] ID=f(VDS);Tj=25C;parameter:VGS ID=f(VDS);Tj=125C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance 1.00 0.80 5V 5.5 V 0.70 0.90 6V 6.5 V 0.80 0.60 7V RDS(on)[] RDS(on)[] 10 V 0.70 0.50 98% 0.40 0.60 typ 0.30 0.50 0.40 0.20 0 10 20 30 40 0.10 -50 -25 0 25 ID[A] RDS(on)=f(ID);Tj=125C;parameter:VGS Final Data Sheet 50 75 100 125 150 Tj[C] RDS(on)=f(Tj);ID=7.2A;VGS=10V 7 Rev.2.1,2018-02-07 800VCoolMOSP7PowerTransistor IPAN80R280P7 Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge 50 10 25 C 9 40 8 35 7 30 6 25 VGS[V] ID[A] 45 150 C 640 V 5 20 4 15 3 10 2 5 1 0 0 2 4 6 8 10 0 12 120 V 0 10 VGS[V] 20 30 40 Qgate[nC] ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=7.2Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode Diagram12:Avalancheenergy 2 10 50 25 C 125 C 45 40 35 101 IF[A] EAS[mJ] 30 25 20 0 10 15 10 5 10-1 0.0 0.5 1.0 1.5 2.0 0 25 50 VSD[V] 100 125 150 Tj[C] IF=f(VSD);parameter:Tj Final Data Sheet 75 EAS=f(Tj);ID=2.2A;VDD=50V 8 Rev.2.1,2018-02-07 800VCoolMOSP7PowerTransistor IPAN80R280P7 Diagram13:Drain-sourcebreakdownvoltage Diagram14:Typ.capacitances 950 104 900 103 850 102 C[pF] VBR(DSS)[V] Ciss Coss 800 101 750 100 Crss 700 -75 -50 -25 0 25 50 75 100 125 150 175 10-1 0 100 200 Tj[C] 300 400 500 VDS[V] VBR(DSS)=f(Tj);ID=1mA C=f(VDS);VGS=0V;f=250kHz Diagram15:Typ.Cossstoredenergy 8 7 6 Eoss[J] 5 4 3 2 1 0 0 100 200 300 400 500 600 700 800 VDS[V] Eoss=f(VDS) Final Data Sheet 9 Rev.2.1,2018-02-07 800VCoolMOSP7PowerTransistor IPAN80R280P7 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform Rg1 VDS Rg 2 IF Rg1 = Rg 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS 90% VDS VGS VGS 10% td(on) ton tr td(off) tf toff Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VDS VDS Final Data Sheet 10 ID VDS Rev.2.1,2018-02-07 800VCoolMOSP7PowerTransistor IPAN80R280P7 6PackageOutlines DIMENSIONS A A1 A2 b b1 c D D1 E e N L L1 Q MILLIMETERS MAX. 4.80 2.80 2.67 0.69 1.15 0.59 16.10 9.78 10.60 2.54 3 13.45 13.75 1.70 1.90 3.00 3.20 3.25 3.45 DOCUMENT NO. Z8B00180155 MIN. 4.60 2.60 2.47 0.56 1.01 0.46 15.90 9.58 10.40 REVISION 04 SCALE 5:1 0 1 2 3 4 5mm EUROPEAN PROJECTION ISSUE DATE 07.11.2016 Figure1OutlinePG-TO220FullPAK-NarrowLead,dimensionsinmm-IndustrialGrade Final Data Sheet 11 Rev.2.1,2018-02-07 800VCoolMOSP7PowerTransistor IPAN80R280P7 7AppendixA Table11RelatedLinks * IFXCoolMOSWebpage:www.infineon.com * IFXDesigntools:www.infineon.com Final Data Sheet 12 Rev.2.1,2018-02-07 800VCoolMOSP7PowerTransistor IPAN80R280P7 RevisionHistory IPAN80R280P7 Revision:2018-02-07,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2016-12-02 Release of final version 2.1 2018-02-07 Corrected front page text TrademarksofInfineonTechnologiesAG AURIXTM,C166TM,CanPAKTM,CIPOSTM,CoolGaNTM,CoolMOSTM,CoolSETTM,CoolSiCTM,CORECONTROLTM,CROSSAVETM,DAVETM,DI-POLTM,DrBladeTM, EasyPIMTM,EconoBRIDGETM,EconoDUALTM,EconoPACKTM,EconoPIMTM,EiceDRIVERTM,eupecTM,FCOSTM,HITFETTM,HybridPACKTM,InfineonTM, ISOFACETM,IsoPACKTM,i-WaferTM,MIPAQTM,ModSTACKTM,my-dTM,NovalithICTM,OmniTuneTM,OPTIGATM,OptiMOSTM,ORIGATM,POWERCODETM, PRIMARIONTM,PrimePACKTM,PrimeSTACKTM,PROFETTM,PRO-SILTM,RASICTM,REAL3TM,ReverSaveTM,SatRICTM,SIEGETTM,SIPMOSTM,SmartLEWISTM, SOLIDFLASHTM,SPOCTM,TEMPFETTM,thinQTM,TRENCHSTOPTM,TriCoreTM. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726Munchen,Germany (c)2018InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics ("Beschaffenheitsgarantie"). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer'scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer'sproductsandanyuseofthe productofInfineonTechnologiesincustomer'sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer's technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 13 Rev.2.1,2018-02-07