SILICON EPITAXIAL
PNP TRANSISTOR
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Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 5981
Issue 3
Page 1 of 3
2N5883
• High Voltage, Low Saturation Voltages.
• Hermetic TO3 Metal Package.
• Designed For Power Switching
and Linear Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VCBO Collector – Base Voltage -60V
VCEO Collector – Emitter Voltage -60V
VEBO Emitter – Base Voltage -5V
IC Continuous Collector Current -25A
ICM Peak Collector Current -50A
IB Base Current -7.5A
PD Total Power Dissipation at TC = 25°C 200W
Derate Above 25°C 1.14W/°C
TJ Junction Temperature Range -65 to +200°C
Tstg Storage Temperature Range -65 to +200°C
THERMAL PROPERTIES
Symbols Parameters Max. Units
RθJC
Thermal Resistance, Junction To Case 0.875 °C/W
SILICON EPITAXIAL
PNP TRANSISTOR
2N5883
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 5981
Issue 3
Page 2 of 3
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise stated)
Symbols Parameters Test Conditions Min.
Typ Max.
Units
V(BR)CEO
(1)
Collector-Emitter
Breakdown Voltage IC = -50mA -60 V
VCE = -60V VBE = 1.5V -1.0
ICEV Collector Cut-Off Current
TC = 150°C -10
ICEO Collector Cut-Off Current VCE = -30V IB = 0 -2
ICBO Collector Cut-Off Current VCB = -60V IE = 0 -1.0
IEBO Emitter Cut-Off Current VEB = -5V IC = 0 -1.0
mA
IC = -3A VCE = -4V 35
IC = -10A VCE = -4V 20 100
hFE
(1)
Forward-current transfer
ratio
IC = -25A VCE = -4V 4
VBE
(1)
Base-Emitter Voltage IC = -10A VCE = -4V -1.5
IC = -15A IB = -1.5A -1.0
VCE(sat)
(1)
Collector-Emitter Saturation
Voltage IC = -25A IB = -6.25A -4
VBE(sat)
(1)
Base-Emitter Saturation
Voltage IC = -25A IB = -6.25A -2.5
V
DYNAMIC CHARACTERISTICS
IC = -1.0A VCE = -10V
fT Transition Frequency
f = 1.0MHz
4 MHz
VCB = -10V IE = 0
Cobo Output Capacitance f = 1.0MHz 1000 pF
tr Rise Time 0.7
ts Storage Time 1.0
tf Fall Time
VCC = -30V IC = -10A
IB1 = -IB2 = -1.0A
0.8
µs
Notes
NotesNotes
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
SILICON EPITAXIAL
PNP TRANSISTOR
2N5883
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 5981
Issue 3
Page 3 of 3
MECHANICAL DATA
Dimensions in mm (inches)
TO3 (TO
-
204AA) METAL PACKAGE
Underside View
Pin 1 - Base Pin 2 - Emitter Case - Collector
1 2
3
(case)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
38.61 (1.52)
39.12 (1.54)
29.9 (1.177)
30.4 (1.197)
16.64 (0.655)
17.15 (0.675)
3.84 (0.151)
4.09 (0.161)
0.97 (0.060)
1.10 (0.043)
7.92 (0.312)
12.70 (0.50)
22.23
(0.875)
max.
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)
