ZXTP25040DFH 40V SOT23 PNP medium power transistor Summary BVCEO > -40V BVECO > -3V ; IC(CONT) = -3A RCE(sat) = 55 m ; VCE(sat) < -85mV @ 1A ; PD = 1.25W Complementary part number ZXTN25040DFH Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. B Features * High power dissipation SOT23 package * High peak current * Low saturation voltage * 7V reverse blocking voltage E Applications * MOSFET and IGBT gate driving * DC - DC converters * Motor drive * High side driver E C B Pinout - top view Ordering information Device ZXTP25040DFHTA Reel size (inches) Tape width Quantity per reel 7 8mm 3000 Device marking 024 Issue 2 - February 2006 (c) Zetex Semiconductors plc 2006 1 www.zetex.com ZXTP25040DFH Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage VCBO -45 V Collector-emitter voltage (forward blocking) VCEO -40 V Emitter-collector voltage (reverse blocking) VECO -3 V Emitter-base voltage VEBO -7 V IC -3 A Peak pulse current ICM -9 A Power dissipation at TA =25C (a) linear derating factor PD 0.73 5.84 W mW/C Power dissipation at TA =25C (b) linear derating factor PD 1.05 8.4 W mW/C Power dissipation at TA =25C (c) linear derating factor PD 1.25 9.6 W mW/C Power dissipation at TA =25C (d) linear derating factor PD 1.81 14.5 W mW/C Tj, Tstg -55 to 150 C Symbol Limit Unit Junction to ambient (a) RJA 171 C/W Junction to ambient (b) RJA 119 C/W Junction to ambient (c) RJA 100 C/W Junction to ambient (d) RJA 69 C/W Continuous collector current (b) Operating and storage temperature range Thermal resistance Parameter NOTES: (a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (d) As (c) above measured at t<5sec. Issue 2 - February 2006 (c) Zetex Semiconductors plc 2006 2 www.zetex.com ZXTP25040DFH Characteristics Issue 2 - February 2006 (c) Zetex Semiconductors plc 2006 3 www.zetex.com ZXTP25040DFH Electrical characteristics (at TAMB = 25C unless otherwise stated) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage (base open) Emitter-collector breakdown voltage (reverse blocking) Emitter-base breakdown voltage Collector cut-off current Symbol BVCBO Min. -45 Typ. -75 BVCEO -40 -65 V IC = -10mA (*) BVECO -3 -8.7 V IE = -100uA (*) BVEBO -7 -8.2 V IE = -100A ICBO <-1 -50 -20 nA A VCB = -36V VCB = -36V, Tamb= 100C Emitter cut-off current IEBO <-1 -50 nA VEB = -5.6V -170 -260 mV IC = -1A, IB = -20mA (*) -65 -85 mV IC = -1A, IB = -100mA (*) -165 -220 mV IC = -3A, IB = -300mA (*) -930 -1000 mV IC = -3A, IB = -300mA (*) -830 -900 mV IC = -3A, VCE = -2V (*) 300 450 900 200 300 IC = -1A, VCE = -2V (*) 30 60 IC = -3A, VCE = -2V (*) Collector-emitter saturation VCE(sat) voltage Base-emitter saturation VBE(sat) voltage Base-emitter turn-on voltage VBE(on) Static forward current transfer ratio hFE Max. Unit V Conditions IC = -100A IC = -10mA, VCE = -2V (*) Transition frequency fT 270 MHz IC = -50mA, VCE = -10V f = 100MHz Output capacitance COBO 17.4 pF VCB = -10V, f = 1MHz (*) Turn-on time t(on) 75.5 ns VCC = -15V. IC = -750mA, IB1 = IB2= -15mA. Turn-off time t(off) 320 ns NOTES: (*) Measured under pulsed conditions. Pulse width 300s; duty cycle 2%. Issue 2 - February 2006 (c) Zetex Semiconductors plc 2006 4 www.zetex.com ZXTP25040DFH Typical characteristics Issue 2 - February 2006 (c) Zetex Semiconductors plc 2006 5 www.zetex.com ZXTP25040DFH Package outline - SOT23 L H N G D 3 leads M A B C K Dim. F Millimeters Inches Min. Max. Min. Max. A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 C - 1.10 D 0.37 F 0.085 G Dim. Millimeters Inches Min. Max. Max. Max. H 0.33 0.51 0.013 0.020 0.055 K 0.01 0.10 0.0004 0.004 - 0.043 L 2.10 2.50 0.083 0.0985 0.53 0.015 0.021 M 0.45 0.64 0.018 0.025 0.15 0.0034 0.0059 N 0.95 NOM - - 1.90 NOM 0.075 NOM 0.0375 NOM - - - Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 2 - February 2006 (c) Zetex Semiconductors plc 2006 6 www.zetex.com