ZXTP25040DFH
Issue 2 - February 2006 4 www.zetex.com
© Zetex Semiconductors plc 2006
Electrical characteristics (at TAMB = 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown
voltage
BVCBO -45 -75 V IC = -100A
Collector-emitter breakdown
voltage (base open)
BVCEO -40 -65 V IC = -10mA (*)
NOTES:
(*) Measured under pulsed conditions. Pulse width ⱕ300s; duty cycle ⱕ2%.
Emitter-collector breakdown
voltage (reverse blocking)
BVECO -3 -8.7 V IE = -100uA (*)
Emitter-base breakdown
voltage
BVEBO -7 -8.2 V IE = -100A
Collector cut-off current ICBO <-1 -50
-20
nA
A
VCB = -36V
VCB = -36V, Tamb= 100°C
Emitter cut-off current IEBO <-1 -50 nA VEB = -5.6V
Collector-emitter saturation
voltage
VCE(sat) -170 -260 mV IC = -1A, IB = -20mA (*)
-65 -85 mV IC = -1A, IB = -100mA (*)
-165 -220 mV IC = -3A, IB = -300mA (*)
Base-emitter saturation
voltage
VBE(sat) -930 -1000 mV IC = -3A, IB = -300mA (*)
Base-emitter turn-on voltage VBE(on) -830 -900 mV IC = -3A, VCE = -2V (*)
Static forward current
transfer ratio
hFE 300 450 900 IC = -10mA, VCE = -2V (*)
200 300 IC = -1A, VCE = -2V (*)
30 60 IC = -3A, VCE = -2V (*)
Transition frequency fT270 MHz IC = -50mA, VCE = -10V
f = 100MHz
Output capacitance COBO 17.4 pF VCB = -10V, f = 1MHz (*)
Turn-on time t(on) 75.5 ns VCC = -15V. IC = -750mA,
IB1 = IB2= -15mA.
Turn-off time t(off) 320 ns