se ok - eee ET a ee ee ce ee anmatne oe ee L2E D Bf eaeress go8saa? 2 i T-27~0 MAXIMUM RATINGS 9 MOTOROLA SC XSTRS/R F&F Rating Symbol BC860 BC859 Unit BCS59AL BL CL Collector-Emitter Voltage VcEO 45 30 Vv 7 7 Collector-Base Voltage VcBo 50 30 v BCS60AL, BL, CL Emitter-Base Voltage Veso 6.0 5.0 Vv Collector Current Continuous Ic 100 100 mAdc CASE 318-03, STYLE 6 THERMAL CHARACTERISTICS P SOT-23 (TO-236AB) Characteristic Symbol Max Unit Tota! Device Dissipation FR-5 Board,* Pp 225 mw 3 Collector TA = 25C Derate above 25C 18 mWwrc S Th | Resist Juneti bi 41 C 1 ermal Resistance Junction to Ambient Raa 7 4 ig pase Total Device Dissipation Pp 300 mw 2 Alumina Substrate,** Ta = 25C i Derate above 25C 2.4 mWPC 2 Emitter Thermal Resistance Junction to Ambient Raa * 856 "CW Junction and Storage Temperature TJ Tstg | 55 to +150 bs 03 LOW NOISE #FR-5 = 1.0 x 0.75 x 0.062 in. TRANSISTORS **Alumina = 0.4 x 0.3 x 0.024 in, 99.5% alumina. . . DEVICE MARKING PNP SILICON BC859AL = 4A; BC859BL = 4B; BC859CL = 4C; BC860AL = 4E; BC860BL = 4F; BC860CL = 4G Refer to BC559 for graphs. ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) | Characteristic | Symbol Min Typ | Max [ Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage V(BRICEO Vv BC860 Series 45 BC859 Series 30 - _ Collector-Emitter Breakdown Voltage V(BRICES Vv (Veg = 0) BC860 Series 50 _ _ BC859 Series 30 _ _ Emitter-Base Breakdown Voltage VIBRIEBO 5.0 _ _ v Collector Cutoff Current IcBO Vcp = 30V, IE = 0) _ - 15 nA (Vop = 30 V, Ta = 150C) _ 5.0 pA ON CHARACTERISTICS DC Current Gain hee _ (I = 10 pA, Voce = 5.0 V) BC859AL, BC860AL _ 90 - BC8S59BL, BC860BL _ 150 _ BC859CL, BC860CL _ 270 _ {lc = 2.0 mA, Vcg = 5.0 V) BC8S9AL, BC8G0AL 110 180 220 BC859BL, BCS60BL 200 290 450 BC859CL, BCS60CL 420 520 800 Collector-Emitter Saturation Voltage VcE(sat) v (lc = 10 mA, Ig = 0.5 mA} _ _ 0.25 (Ic = 100 mA, Ip = 5.0 mA) _ = 0.6 Base-Emitter Saturation Voltage VBE(sat) Vv {I = 10 mA, Ig = 0.5 mA) _ 0.7 _ (Ic = 100 mA, ig = 5.0 mA) - 0.9 _- Base-Emitter On Voltage VBE(on) Vv (Ic = 2.0 mA, VcE = 5.0 V) 0.58 _ 0.7 (Ic = 10 mA, Vce = 5.0 V) _ 0.77 SMALL-SIGNAL CHARACTERISTICS Current-Gain Bandwidth Product ft 100 _ _ MHz (ic = 10 mA, Vce = 5,0 Vde, f = 35 MHz) Output Capacitance Cobo _ _ 4.5 pF (Veg = 10 V, f = 1.0 MHz} Noise Figure Ne - - 4.0 dB (Ic = 0.2 mAde, Vcg = 5.0 Vde, Rg = 2.0 ka, f = 1.0 kHz, BW = 200 Hz) MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES 2-132