STTH12010TV Ultrafast recovery - high voltage diode Main product characteristics IF(AV) 2 x 60 A VRRM 1000 V Tj 150 C VF (typ) 1.30 V trr (typ) 49 ns A1 K1 A1 K2 A2 K2 K1 A2 A1 Features and benefits Ultrafast, soft recovery Very low conduction and switching losses High frequency and/or high pulsed current operation High reverse voltage capability High junction temperature Insulated package - Electrical insulation = 2500 VRMS Capacitance = 45 pF A1 K2 K1 A2 K1 K2 ISOTOP STTH12010TV1 A2 ISOTOP STTH12010TV2 Order codes Part Number Marking Description STTH12010TV1 STTH12010TV1 The compromise-free, high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. STTH12010TV2 STTH12010TV2 These demanding applications include industrial power supplies, motor control, and similar industrial systems that require rectification and freewheeling. These diodes also fit into auxiliary functions such as snubber, bootstrap, and demagnetization applications. The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate advantage for reducing maintenance of the equipment March 2006 Rev 1 1/8 www.st.com 8 Characteristics STTH12010TV 1 Characteristics Table 1. Absolute ratings (limiting values per diode at 25 C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 1000 V IF(RMS) RMS forward current 150 A 60 A 750 A 400 A -65 to + 150 C 150 C IF(AV) Average forward current, = 0.5 Per diode IFRM Repetitive peak forward current tp = 5 s, F = 5 kHz square IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal Tstg Storage temperature range Tj Table 2. Tc = 50 C Maximum operating junction temperature Thermal parameters Symbol Parameter Value Rth(j-c) Junction to case Rth(c) Coupling thermal resistance Per diode 0.80 Total 0.45 Unit C/W 0.1 When the diodes are used simultaneously: Tj(diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c) Table 3. Symbol IR(1) Static electrical characteristics Parameter Reverse leakage current Test conditions Tj = 25 C Tj = 125 C Min. Typ Forward voltage drop Tj = 100 C A 20 200 2.0 IF = 60 A Tj = 150 C 1. Pulse test: tp = 5 ms, < 2 % 2. Pulse test: tp = 380 s, < 2 % To evaluate the conduction losses use the following equation: P = 1.3 x IF(AV) + 0.0067 IF2(RMS) 2/8 Unit 20 VR = VRRM Tj = 25 C VF(2) Max. 1.40 1.80 1.30 1.70 V STTH12010TV Characteristics Table 4. Dynamic characteristics Symbol Parameter Test conditions Min. Typ IF = 1 A, dIF/dt = -50 A/s, VR = 30 V, Tj = 25 C Max. Unit 115 IF = 1 A, dIF/dt = -100 A/s, VR = 30 V, Tj = 25 C 61 80 IF = 1 A, dIF/dt = -200 A/s, VR = 30 V, Tj = 25 C 49 65 Reverse recovery current IF = 60 A, dIF/dt = -200 A/s, VR = 600 V, Tj = 125 C 31 40 A S Softness factor IF = 60 A, dIF/dt = -200 A/s, VR = 600 V, Tj = 125 C 1 tfr Forward recovery time dIF/dt = 100 A/s IF = 60 A VFR = 1.5 x VFmax, Tj = 25 C 750 ns Forward recovery voltage IF = 60 A, dIF/dt = 100 A/s, Tj = 25 C Reverse recovery time trr IRM VFP Figure 1. Conduction losses versus average current Figure 2. 4 ns V Forward voltage drop versus forward current IFM(A) P(W) 200 140 =0.05 =0.5 =0.2 =0.1 =1 180 120 Tj=150C (Maximum values) 160 100 140 80 120 60 100 Tj=150C (Typical values) Tj=25C (Maximum values) 80 40 T 60 20 40 IF(AV)(A) 0 0 10 20 30 40 50 60 70 80 20 VFM(V) 0 0.0 Figure 3. Relative variation of thermal impedance junction to case versus pulse duration Figure 4. 1.0 1.5 2.0 2.5 3.0 3.5 Peak reverse recovery current versus dIF/dt (typical values) IRM(A) Zth(j-c)/Rth(j-c) 70 1.0 0.9 0.5 VR=600V Tj=125C Single pulse 60 IF= 2 x IF(AV) 0.8 IF= IF(AV) 0.7 50 0.6 40 IF=0.5 x IF(AV) 0.5 30 0.4 0.3 20 0.2 10 0.1 0.0 1.E-03 dIF/dt(A/s) tp(s) 1.E-02 1.E-01 1.E+00 0 1.E+01 0 50 100 150 200 250 300 350 400 450 500 3/8 Characteristics Figure 5. STTH12010TV Reverse recovery time versus dIF/dt (typical values) Figure 6. Reverse recovery charges versus dIF/dt (typical values) Qrr(C) trr(ns) 1000 10 VR=600V Tj=125C 900 VR=600V Tj=125C IF= 2 x IF(AV) 800 IF= 2 x IF(AV) 8 700 600 IF= IF(AV) 6 IF= IF(AV ) 500 400 4 IF=0.5 x IF(AV) 300 200 2 100 IF=0.5 x IF(AV) dIF/dt(A/s) dIF/dt(A/s) 0 0 0 50 Figure 7. 100 150 200 250 300 350 400 450 500 Softness factor versus dIF/dt (typical values) 0 50 Figure 8. 100 150 200 250 300 350 400 450 500 Relative variations of dynamic parameters versus junction temperature S factor 1.50 2.0 IF = 2 x IF(AV) VR=600V Tj=125C 1.8 IF = IF(AV) VR=600V Reference: Tj=125C Sfactor 1.6 1.25 1.4 1.2 1.0 1.00 0.8 IRM 0.6 0.75 0.4 dIF/dt(A/s) 0.50 0 4/8 50 100 150 200 250 300 350 400 450 500 tRR 0.2 QRR 0.0 25 50 Tj(C) 75 100 125 STTH12010TV Figure 9. Characteristics Transient peak forward voltage versus dIF/dt (typical values) Figure 10. Forward recovery time versus dIF/dt (typical values) VFP(V) 20 1100 IF = IF(AV) Tj=125C 18 tfr(ns) IF = IF(AV) VFR = 1.5 x V F max. Tj=125C 1000 16 900 14 800 12 700 10 600 8 6 500 4 400 2 300 dIF/dt(A/s) 0 dIF/dt(A/s) 200 0 100 200 300 400 500 0 100 200 300 400 500 Figure 11. Junction capacitance versus reverse voltage applied (typical values) C(pF) 1000 F=1MHz Vosc=30mVRMS Tj=25C 100 VR(V) 10 1 10 100 1000 5/8 Package information 2 STTH12010TV Package information Epoxy meets UL94, V0 Cooling method: by conduction (C) Table 5. ISOTOP dimensions DIMENSIONS REF. E G2 A C2 E2 F1 F P1 D G S D1 Inches Min. Max Min. Max. A 11.80 12.20 0.465 0.480 A1 8.90 9.10 0.350 0.358 B 7.8 8.20 0.307 0.323 C 0.75 0.85 0.030 0.033 C2 1.95 2.05 0.077 0.081 D 37.80 38.20 1.488 1.504 D1 31.50 31.70 1.240 1.248 E 25.15 25.50 0.990 1.004 E1 23.85 24.15 0.939 0.951 C A1 Millimeters E2 24.80 typ. 0.976 typ. G 14.90 15.10 0.587 0.594 G1 12.60 12.80 0.496 0.504 G2 3.50 4.30 0.138 0.169 F 4.10 4.30 0.161 0.169 F1 4.60 5.00 0.181 0.197 P 4.00 4.30 0.157 0.69 P1 4.00 4.40 0.157 0.173 S 30.10 30.30 1.185 1.193 B OP G1 E1 In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 6/8 STTH12010TV 3 4 Ordering information Ordering information Part Number Marking Package Weight Base qty Delivery mode STTH12010TV1 STTH12010TV1 ISOTOP 27 g 10 Tube STTH12010TV2 STTH12010TV2 ISOTOP 27 g 10 Tube Revision history Date Revision 02-Mar-2006 1 Description of Changes First issue. 7/8 STTH12010TV Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. 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