March 2006 Rev 1 1/8
8
STTH12010TV
Ultrafast recovery - high voltage diode
Main product characteristics
Features and benefits
Ultrafast, soft recovery
Very low conduction and switching losses
High frequency and/or high pulsed current
operation
High reverse voltage capability
High junction temperature
Insulated package
Electrical insulation = 2500 VRMS
Capacitance = 45 pF
Description
The compromise-free, high quality design of this
diode has produced a device with low leakage
current, regularly reproducible characteristics and
intrinsic ruggedness. These characteristics make
it ideal for heavy duty applications that demand
long term reliability.
These demanding applications include industrial
power supplies, motor control, and similar
industrial systems that require rectification and
freewheeling. These diodes also fit into auxiliary
functions such as snubber, bootstrap, and
demagnetization applications.
The improved performance in low leakage
current, and therefore thermal runaway guard
band, is an immediate advantage for reducing
maintenance of the equipment
Order codes
IF(AV) 2 x 60 A
VRRM 1000 V
Tj150° C
VF (typ) 1.30 V
trr (typ) 49 ns
Part Number Marking
STTH12010TV1 STTH12010TV1
STTH12010TV2 STTH12010TV2
K2
K1
A2
A1 K2
K1 A2
A1
A1 A1
A2
A2
K1
K1
K2
K2
ISOTOP
STTH12010TV1
ISOTOP
STTH12010TV2
www.st.com
Characteristics STTH12010TV
2/8
1 Characteristics
When the diodes are used simultaneously:
Tj(diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)
To evaluate the conduction losses use the following equation:
P = 1.3 x IF(AV) + 0.0067 IF2(RMS)
Table 1. Absolute ratings (limiting values per diode at 25° C, unless otherwise specified)
Symbol Parameter Value Unit
VRRM Repetitive peak reverse voltage 1000 V
IF(RMS) RMS forward current 150 A
IF(AV) Average forward current, δ = 0.5 Per diode Tc = 50° C 60 A
IFRM Repetitive peak forward current tp = 5 µs, F = 5 kHz square 750 A
IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal 400 A
Tstg Storage temperature range -65 to + 150 °C
TjMaximum operating junction temperature 150 °C
Table 2. Thermal parameters
Symbol Parameter Value Unit
Rth(j-c) Junction to case Per diode 0.80
°C/WTotal 0.45
Rth(c) Coupling thermal resistance 0.1
Table 3. Static electrical characteristics
Symbol Parameter Test conditions Min. Typ Max. Unit
IR(1) Reverse leakage current Tj = 25° C VR = VRRM
20 µA
Tj = 125° C 20 200
VF(2) Forward voltage drop
Tj = 25° C
IF = 60 A
2.0
VTj = 100° C 1.40 1.80
Tj = 150° C 1.30 1.70
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: tp = 380 µs, δ < 2 %
STTH12010TV Characteristics
3/8
Table 4. Dynamic characteristics
Symbol Parameter Test conditions Min. Typ Max. Unit
trr Reverse recovery time
IF = 1 A, dIF/dt = -50 A/µs,
VR = 30 V, Tj = 25° C 115
ns
IF = 1 A, dIF/dt = -100 A/µs,
VR = 30 V, Tj = 25° C 61 80
IF = 1 A, dIF/dt = -200 A/µs,
VR = 30 V, Tj = 25° C 49 65
IRM Reverse recovery current IF = 60 A, dIF/dt = -200 A/µs,
VR = 600 V, Tj = 125° C 31 40 A
S Softness factor IF = 60 A, dIF/dt = -200 A/µs,
VR = 600 V, Tj = 125° C 1
tfr Forward recovery time IF = 60 A dIF/dt = 100 A/µs
VFR = 1.5 x VFmax, Tj = 25° C 750 ns
VFP Forward recovery voltage IF = 60 A, dIF/dt = 100 A/µs,
Tj = 25° C 4V
Figure 1. Conduction losses versus
average current
Figure 2. Forward voltage drop versus
forward current
P(W)
0
20
40
60
80
100
120
140
0 1020304050607080
=0.05 =0.1 =0.2 =0.5 =1
T
I (A)
F(AV)
I (A)
FM
0
20
40
60
80
100
120
140
160
180
200
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Tj=25°C
(Maximum values)
Tj=150°C
(Maximum values)
Tj=150°C
(Typical values)
V (V)
FM
Figure 3. Relative variation of thermal
impedance junction to case
versus pulse duration
Figure 4. Peak reverse recovery current
versus dIF/dt (typical values)
Z/R
th(j-c) th(j-c)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
Single pulse
t (s)
p
I (A)
RM
0
10
20
30
40
50
60
70
0 50 100 150 200 250 300 350 400 450 500
VR=600V
Tj=125°C
IF= 2 x IF(AV)
IF= IF(AV)
IF=0.5 x IF(AV)
dI /dt(A/µs)
F
Characteristics STTH12010TV
4/8
Figure 5. Reverse recovery time versus
dIF/dt (typical values)
Figure 6. Reverse recovery charges versus
dIF/dt (typical values)
t (ns)
rr
0
100
200
300
400
500
600
700
800
900
1000
0 50 100 150 200 250 300 350 400 450 500
V
R
=600V
T
j
=125°C
I
F
=0.5 x I
F(AV)
I
F
= 2 x I
F(AV)
I
F
=I
F(AV)
dI /dt(A/µs)
F
Q (µC)
rr
0
2
4
6
8
10
050
1
00
1
50
2
00
2
50 300 350
4
00
4
50 500
IF=0.5 x IF(AV)
IF= IF(AV)
IF= 2 x IF(AV)
VR=600V
Tj=125°C
dI /dt(A/µs)
F
Figure 7. Softness factor versus
dIF/dt (typical values)
Figure 8. Relative variations of dynamic
parameters versus junction
temperature
S factor
0.50
0.75
1.00
1.25
1.50
0 50 100 150 200 250 300 350 400 450 500
IF= 2 x IF(AV)
VR=600V
Tj=125°C
dI /dt(A/µs)
F
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
25 50 75 100 125
I
RM
Q
RR
S
factor
I
F
= I
F(AV)
V
R
=600V
Reference: T
j
=125°C
t
RR
T (°C)
j
STTH12010TV Characteristics
5/8
Figure 9. Transient peak forward voltage
versus dIF/dt (typical values)
Figure 10. Forward recovery time versus
dIF/dt (typical values)
Figure 11. Junction capacitance versus
reverse voltage applied (typical
values)
V(V)
FP
0
2
4
6
8
10
12
14
16
18
20
0 100 200 300 400 500
I
F
= I
F(AV)
T
j
=125°C
dI /dt(A/µs)
F
t (ns)
fr
200
300
400
500
600
700
800
900
1000
1100
0 100 200 300 400 500
IF= IF(AV)
VFR = 1.5 x VFmax.
Tj=125°C
dI /dt(A/µs)
F
C(pF)
10
100
1000
1 10 100 1000
F=1MHz
Vosc=30mVRMS
Tj=25°C
V(V)
R
Package information STTH12010TV
6/8
2 Package information
Epoxy meets UL94, V0
Cooling method: by conduction (C)
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com.
Table 5. ISOTOP dimensions
REF.
DIMENSIONS
Millimeters Inches
Min. Max Min. Max.
A 11.80 12.20 0.465 0.480
A1 8.90 9.10 0.350 0.358
B 7.8 8.20 0.307 0.323
C 0.75 0.85 0.030 0.033
C2 1.95 2.05 0.077 0.081
D 37.80 38.20 1.488 1.504
D1 31.50 31.70 1.240 1.248
E 25.15 25.50 0.990 1.004
E1 23.85 24.15 0.939 0.951
E2 24.80 typ. 0.976 typ.
G 14.90 15.10 0.587 0.594
G1 12.60 12.80 0.496 0.504
G2 3.50 4.30 0.138 0.169
F 4.10 4.30 0.161 0.169
F1 4.60 5.00 0.181 0.197
P 4.00 4.30 0.157 0.69
P1 4.00 4.40 0.157 0.173
S 30.10 30.30 1.185 1.193
F1 F
D1
G
DS
B
E1
G1
ØP
P1
E
E2
G2 C
C2
A1
A
STTH12010TV Ordering information
7/8
3 Ordering information
4 Revision history
Part Number Marking Package Weight Base qty Delivery mode
STTH12010TV1 STTH12010TV1 ISOTOP 27 g 10 Tube
STTH12010TV2 STTH12010TV2 ISOTOP 27 g 10 Tube
Date Revision Description of Changes
02-Mar-2006 1 First issue.
STTH12010TV
8/8
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