FDS6675BZ MOSFET - P-Channel, POWERTRENCH) -30 V, -11 A, 13 mW Description www.onsemi.com This P-Channel MOSFET is produced using ON Semiconductor's advanced POWERTRENCH process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. D D Max RDS(on) = 13 mW at VGS = -10 V, ID = -11 A Max RDS(on) = 21.8 mW at VGS = -4.5 V, ID = -9 A Extended VGS Range (-25 V) for Battery Applications HBM ESD Protection Level of 5.4 kV Typical (Note 3) High Performance Trench Technology for Extremely Low RDS(on) High Power and Current Handling Capability This Device is Pb-Free and RoHS Compliant Specifications D Pin 1 Features * * * * * * * D S SS G SOIC8 CASE 751EB ELECTRICAL CONNECTION D 5 4 G D 6 3 S D 7 2 S D 8 1 S MAXIMUM RATINGS (TA = 25C unless otherwise noted) Symbol Parameter Ratings Unit VDS Drain to Source Voltage -30 V VGS Gate to Source Voltage 25 V ID Drain Current - Continuous (Note 1a) - Pulsed -11 -55 PD Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) 2.5 1.2 1.0 TJ, TSTG Operating and Storage Junction Temperature Range A -55 to +150 C FDS4435BZ A L YW Symbol Parameter Ratings Unit RqJC Thermal Resistance, Junction to Case 25 C/W RqJA Thermal Resistance, Junction to Ambient (Note 1a) 50 1 = Specific Device Code = Assembly Site = Wafer Lot Number = Assembly Start Week ORDERING INFORMATION Device THERMAL CHARACTERISTICS August, 2019 - Rev. 3 FDS6675BZ ALYW W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. (c) Semiconductor Components Industries, LLC, 2009 MARKING DIAGRAM FDS6675BZ Package Shipping SOIC8 (Pb-Free) 2,500 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: FDS6675BZ/D FDS6675BZ Table 1. ELECTRICAL CHARACTERISTICS (TA = 25C) Parameter Symbol Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain to Source Breakdown Voltage ID = -250 mA, VGS = 0 V DBVDSS / DTJ Breakdown Voltage Temperature Coefficient ID = -250 mA, referenced to 25C IDSS Zero Gate Voltage Drain Current VDS = -24 V, VGS = 0 V -1 mA IGSS Gate to Source Leakage Current VGS = 25 V, VDS = 0 V 10 mA BVDSS -30 V -20 mV/C ON CHARACTERISTICS VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250 mA DVGS(th) / DTJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250 mA, referenced to 25C 15.7 Static Drain to Source On Resistance VGS = -10 V, ID = -11 A 10.8 13.0 VGS = -4.5 V, ID = -9 A 17.4 21.8 VGS = -10 V, ID = -11 A, TJ = 125C 15.0 18.8 RDS(on) gFS Forward Transconductance VDS = -5 V, ID = -11 A -1 -2 -3 V mV/C 34 mW S DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Crss VDS = -15 V, VGS = 0 V, f = 1 MHz 1855 2470 pF Output Capacitance 335 450 pF Reverse Transfer Capacitance 330 500 pF 3.0 10 ns 7.8 16 ns Turn-Off Delay Time 120 200 ns Fall Time 60 100 ns SWITCHING CHARACTERISTICS td(on) tr td(off) tf Turn-On Delay Time Rise Time VDD = -15 V, ID = -11 A, VGS = -10 V, RGS = 6 W Qg Total Gate Charge VDS = -15 V, VGS = -10 V, ID = -11 A 44 62 nC Qg Total Gate Charge VDS = -15 V, VGS = -5 V, ID = -11 A 25 35 nC Qgs Gate to Source Charge 7.2 nC Qgd Gate to Drain "Miller" Charge 11.4 nC DRAIN-SOURCE DIODE CHARACTERISTICS VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = -2.1 A -0.7 -1.2 V trr Reverse Recovery Time IF = -11 A, di/dt = 100 A/ms 42 ns Qrr Reverse Recovery Charge IF = -11 A, di/dt = 100 A/ms 30 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. NOTES: 1. RqJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by design while RqCA is determined by the user's board design. a. 50C/W when mounted on a 1 in2 pad of 2 oz copper. b. 105C/W when c. 125C/W when mounted on a 0.04 in2 pad of 2 oz copper. mounted on a minimum pad 2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. www.onsemi.com 2 FDS6675BZ TYPICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) VGS = -10V 50 PULSE DURATION = 80 m s DUTY CYCLE = 0.5%MAX VGS = -5V VGS = - 4V VGS = -4.5V 40 30 20 VGS = -3.5V 10 0 VGS = -3V 0 1 2 3 -V DS, DRAIN TO SOURCE VOLTAGE (V) 4.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE -I D, DRAIN CURRENT (A) 60 4 3.0 VGS = -4V 2.5 1.5 VGS = -5V 1.0 0.5 VGS = -10V 0 R DS(on) , DRAIN TO SOURCE ON-RESISTANCE (m) 1.0 0.8 0.6 -80 60 -40 0 40 80 100 30 TJ = 150oC 20 10 0 3.0 120 -I S, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX 40 TJ = 150oC 20 TJ = 25oC 10 TJ = -55oC 2.0 2.5 3.0 3.5 4.0 TJ = 25oC 4.5 6.0 7.5 9.0 -V GS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance vs Gate to Source Voltage 60 30 DUTY CYCLE = 0.5%MAX 40 Figure 3. Normalized On-Resistance vs Junction Temperature 0 50 ID = -11A PULSE DURATION = 80 s VGS = -10V 1.2 50 20 30 40 -I D, DRAIN CURRENT (A) 50 ID = -11A TJ, JUNCTION TEMPERATURE (5C) -ID, DRAIN CURRENT (A) 10 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 1.4 VGS = -4.5V 2.0 Figure 1. On-Region Characteristics NORMALIZED DRAIN TO SOURCE ON-RESISTANCE PULSE DURATION = 80s VGS = -3.5V DUTY CYCLE = 0.5%MAX 3.5 4.5 100 VGS = 0V 10 1 TJ = 150oC TJ = 25oC 0.1 TJ = -55oC 0.01 1E-3 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current www.onsemi.com 3 FDS6675BZ TYPICAL CHARACTERISTICS (Continued) (TJ = 25C unless otherwise noted) -VGS, GATE TO SOURCE VOLTAGE(V) 10 4000 Ciss VDD = -15V VDD = -10V 6 4 CAPACITANCE (pF) 8 VDD = -20V 1000 Coss Crss 2 f = 1 MHz VGS = 0 V 0 0 10 20 30 40 100 0.1 50 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics -I g (uA) TJ = 150oC 1 0.1 TJ = 25oC 1E-3 1E-4 0 5 10 15 20 -VGS (V) 25 30 20 -IAS , AVALANCHE CURRENT (A) 100 0.01 10 Figure 8. Capacitance vs Drain to Source Voltage 1000 10 1 -VDS, DRAIN TO SOURCE VOLTAGE (V) 30 10 TJ = 25oC TJ = 125oC 1 -2 10 35 -1 10 0 10 1 2 10 10 tAV , TIME IN AVALANCHE (ms) Figure 9. Ig vs VGS Figure 10. Unclamped Inductive Switching Capability 12 100 100 us ID, DRAIN CURRENT (A) -I D, DRAIN CURRENT (A) 10 VGS = -10V 8 6 VGS = -4.5V 4 2 10 1 0.1 1 ms 10 ms THIS AREA IS LIMITED BY rDS(on) 100 ms 1s SINGLE PULSE TJ = MAX RATED 10 s RqJA = 125 oC/W DC TA = 25 oC 0 25 50 75 100 125 0.01 0.01 150 0.1 1 10 100 200 VDS , DRAIN to SOURCE VOLTAGE (V) TA, AMBIENT TEMPERATURE (5C) Figure 11. Maximum Continuous Drain Current vs Ambient Temperature Figure 12. Forward Bias Safe Operating Area www.onsemi.com 4 FDS6675BZ TYPICAL CHARACTERISTICS (Continued) (TJ = 25C unless otherwise noted) 4 P(PK), PEAK TRANSIENT POWER (W) 10 VGS = -10 V 3 10 2 10 SINGLE PULSE RqJA = 125 oC/W 10 TA = 25 oC 1 0.5 -4 10 -3 10 -2 -1 10 10 1 2 10 10 3 10 t, PULSE WIDTH (s) Figure 13. Single Pulse Maximum Power Dissipation NORMALIZED THERMAL IMPEDANCE, ZqJA 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 -1 10 -2 10 PDM t1 SINGLE PULSE t2 RqJA = 125 C/W NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZqJA x RqJA + TA o -3 10 -4 10 -4 10 -3 10 -2 10 -1 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION (s) Figure 14. Junction To Ambient Transient Thermal Response Curve POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC8 CASE 751EB ISSUE A DOCUMENT NUMBER: DESCRIPTION: 98AON13735G SOIC8 DATE 24 AUG 2017 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. (c) Semiconductor Components Industries, LLC, 2019 www.onsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800-282-9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 www.onsemi.com 1 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative