FMBS2383 — NPN Epitaxial Silicon Transistor
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
FMBS238 3 Rev. A0 1
April 2011
FMBS2383
NPN Epitaxial Silicon Transistor
Features
• Power Amplifier
• Collec tor-Emitter Voltage : VCEO=160V
• Current Gain Bandwidth Product : fT=120MHz
Absolute Maximum Ratings Ta = 25°C unless otherwise noted
* note1) : Minimum land pattern size
Electrical Characteristics Ta = 25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage 160 V
VCEO Collector-Emitter Voltage 160 V
VEBO Emitter-Base Voltage 5 V
ICCollector Current 800 mA
IBBase Current 160 mA
PDPower Dissipation 630 mW
RθJA* Thermal Resistance, Junction to Ambient 200 °C/W
TJJunction Temperature 150 °C
TSTG Storage Temperature -55 to +150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BVCBO Collector-Base Breakdown Voltage IC = 10μA, IB = 0 160 V
BVCEO Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0 160 V
BVEBO Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 5 V
ICBO Collector Cut-off Current VCB = 120V, IE = 0 100 nA
IEBO Emitter Cut-off Current VBE = 5V, IC = 0 100 nA
hFE DC Current Gain VCE = 5V, IC = 100mA 80 160
VCE (sat) Collector-Emitter Saturation Voltage IC = 500mA, IB = 50mA 1.0 V
VBE (on) Base-Emitter On Voltage VCE = 5V, IC = 500mA 1.0 V
fTCurrent Gain Bandwidth Product VCE = 5V, IC = 100mA 120 MHz
Cob Output Capaci tance VCB = 10V, IE = 0, f = 1MHz 30 pF
CCB
CCE
Marking : 2383
1
2
3
6
5
4
SuperSOTTM-6
FMBS2383 — NPN Epitaxial Silicon Transistor
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
FMBS238 3 Rev. A0 2
Typical Performance Characteristics
Figure 1. DC Current Gain Figure 2. Collector-Emitter Saturation Voltage
Figure 3. Base-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage
Figure 5. Collector-Base Cutoff Current Figure 6. Emitter-Base Cutoff Current
1 10 100 1000
10
100
1000
TA = 100 oC
VCE = 5V
hFE, DC CURRENT GAIN
IC [mA], COLLECTOR CUR RENT
TA = 125 oC
TA = 75 oC
Ta = 25 oC
1 10 100 1000
0.01
0.1
1
VCE(sat),[V] SATURATION VOLTAGE
IC [mA], COLLECTOR CUR RENT
IC = 10 IB
TA = 125 oC
TA = 75 oC
TA = 25 oC
TA = 100 oC
1 10 100 1000
0.1
1
10 IC = 10 IB
VBE(sat)[V], SATURATION VOLTAGE
IC [mA], COLLECTOR CU RRE NT
TA = 125 oC
TA = 75 oC
TA = 25 oC
TA = 100 oC
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0
100
200
300
400
500 VCE = 5V
IC [mA], COLLECTOR CURRENT
VBE(on) [V], BA S E-EMITTER O N VO LTAGE
TA = 125 oC
TA = 75 oC
TA = 25 oC
TA = 100 oC
10 100
0.01
0.1
1
10
100
ICBO[nA], Collector Cut-off Current
VCB [V], C o llecto r -B ase Vo l ta g e
TA = 125 oC
TA = 75 oC
TA = 25 oC
TA = 100 oC
12345678910
1E-3
0.01
0.1
1
10
100
IEBO[nA], Emitter Cut-off Current
VEB [ V], Em i tter-B ase Volta ge
TA = 125 oC
TA = 75 oC
TA = 25 oC
TA = 100 oC
FMBS2383 — NPN Epitaxial Silicon Transistor
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
FMBS238 3 Rev. A0 3
Typical Performance Characteristics (Continued)
Figure 7. Output Capacitance Figure 8. Input Capacitance
Figure 9. Transient Thermal Resistance
024681012
10
15
20
25
30
35
40
Cob [pF], Output Capacitance
VCB [V], C o ll e c to r -B ase Volt a g e
f = 1MHz
012345
100
150
200
250
Cib [pF], Input Capacitance
VCB [V], C o ll e c to r -B ase Volt a g e
f = 1MHz
1E-4 1E-3 0.01 0.1 1 10 100 1000
0.01
0.1
1
10
100 50%
Transient Th ermal Resistance, Rthja
time(sec)
Single Pulse
30%
10%
5%
2%
D=1%
Rthja=200C/W
FMBS2383 — NPN Epitaxial Silicon Transistor
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
FMBS238 3 Rev. A0 4
Physical Dimensions
SuperSOTTM-6
Dimensions in Millimeters
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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Rev. I53
Mouser Electronics
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FMBS2383