© Semiconductor Components Industries, LLC, 2019
October, 2019 − Rev. 1 1Publication Order Number:
FDME1034CZT/D
MOSFET - Complementary,
POWERTRENCH)
N−Channel: 20 V, 3.8 A, 66 mW
P−Channel: −20 V, −2.6 A, 142 mW
FDME1034CZT
General Description
This device is designed specifically as a single package solution for
a DC/DC ‘Switching’ MOSFET in cellular handset and other
ultra−portable applications. It features an independent N−Channel &
P−Channel MOSFET with low on−state resistance for minimum
conduction losses. The gate charge of each MOSFET is also
minimized to allow high frequency switching directly from the
controlling device.
The MicroFET 1.6x1.6 Thin package offers exceptional thermal
performance for it’s physical size and is well suited to switching and
linear mode applications.
Features
Q1: N−Channel
•Max rDS(on) = 66 mW at VGS = 4.5 V, ID = 3.4 A
•Max rDS(on) = 86 mW at VGS = 2.5 V, ID = 2.9 A
•Max rDS(on) = 113 mW at VGS = 1.8 V, ID = 2.5 A
•Max rDS(on) = 160 mW at VGS = 1.5 V, ID = 2.1 A
Q2: P−Channel
•Max rDS(on) = 142 mW at VGS = −4.5 V, ID = −2.3 A
•Max rDS(on) = 213 mW at VGS = −2.5 V, ID = −1.8 A
•Max rDS(on) = 331 mW at VGS = −1.8 V, ID = −1.5 A
•Max rDS(on) = 530 mW at VGS = −1.5 V, ID = −1.2 A
•Low Profile: 0.55 mm Maximum in the New Package MicroFET
1.6x1.6 Thin
•Free from Halogenated Compounds and Antimony Oxides
•HBM ESD Protection Level > 1600 V (Note 3)
•This Device is Pb−Free and is RoHS Compliant
Applications
•DC−DC Conversion
•Level Shifted Load Switch
UDFN6 1.6x1.6, 0.5P
CASE 517DW
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ORDERING INFORMATION
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MARKING DIAGRAM
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&2 = Numeric Date Code
&K = Lot Code
5T = Specific Device Code
$Y&Z&2&K
5T
Bottom Top
S1
G1(P2)
D2(P3)
D1(P6)
D1(P7)
D2(P8)
Pin 1
Note: Center pad of P7 & P8 is a virtual
pin number. Actual P7 & P8 is connected
to edge pad of P6 & P3 respectively.
S2(P4)
G2(P5)
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MOSFET MAXIMUM RATINGS (TA = 25°C, Unless otherwise noted)
Symbol Parameter Q1 Q2 Units
VDS Drain to Source Voltage 20 −20 V
VGS Gate to Source Voltage ±8±8 V
IDDrain Current −Continuous TA = 25°C (Note 1a) 3.8 −2.6 A
−Pulsed 6−6
PDPower Dissipation for Single Operation TA = 25°C (Note 1a) 1.4 W
Power Dissipation for Single Operation TA = 25°C (Note 1b) 0.6
TJ, TSTG Operating and Storage Junction Temperature Range −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be af fected.
THERMAL CHARACTERISTICS
Symbol Parameter Value Units
RθJA Thermal Resistance, Junction to Ambient (Single Operation) (Note 1a) 90
°C/W
RθJA Thermal Resistance, Junction to Ambient (Single Operation) (Note 1b) 195
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking Device Package Shipping†
5T FDME1034CZT UDFN6 1.6x1.6, 0.5P (Pb−Free) 5000 units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D
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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol Parameter Test Conditions Type Min. Typ. Max. Units
OFF CHARACTERISTICS
BVDSS Drain to Source Breakdown
Voltage ID = 250 mA, VGS = 0 V
ID = −250 mA, VGS = 0 V Q1
Q2 20
−20 V
DBVDSS
DTJ
Breakdown Voltage
Temperature Coefficient ID = 250 mA, referenced to 25°C
ID = −250 mA, referenced to 25°CQ1
Q2 16
−12 mV/°C
IDSS Zero Gate Voltage Drain
Current VDS = 16 V, VGS = 0 V
VDS = −16 V, VGS = 0 V Q1
Q2 1
−1 mA
IGSS Gate to Source Leakage
Current VGS = ±8 V, VDS = 0 V All ±10 mA
ON CHARACTERISTICS
VGS(th) Gate to Source Threshold
Voltage VGS = VDS, ID = 250 mA
VGS = VDS, ID = −250 mAQ1
Q2 0.4
−0.4 0.7
−0.6 1.0
−1.0 V
DVGS(th)
DTJ
Gate to Source Threshold
Voltage Temperature
Coefficient
ID = 250 mA, referenced to 25°CQ1
Q2 −3
2mV/°C
rDS(on) Drain to Source On Resistance VGS = 4.5 V, ID = 3.4 A
VGS = 2.5 V, ID = 2.9 A
VGS = 1.8 V, ID = 2.5 A
VGS = 1.5 V, ID = 2.1 A
VGS = 4.5 V, ID = 3.4 A, TJ = 125°C
Q1 55
68
85
106
76
66
86
113
160
112
mW
VGS = −4.5 V, ID = −2.3 A
VGS = −2.5 V, ID = −1.8 A
VGS = −1.8 V, ID = −1.5 A
VGS = −1.5 V, ID = −1.2 A
VGS = −4.5 V, ID = −2.3 A , TJ = 125°C
Q2 95
120
150
190
128
142
213
331
530
190
gFS Forward Transconductance VDS = 4.5 V, ID = 3.4 A
VDS = −4.5 V, ID = −2.3 A Q1
Q2 9
7S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance Q1:
VDS = 10 V, VGS = 0 V, f = 1 MHz
Q2:
VDS = −10 V, VGS = 0 V, f = 1 MHz
Q1
Q2 225
305 300
405 pF
Coss Output Capacitance Q1
Q2 40
55 55
75 pF
Crss Reverse Transfer Capacitance Q1
Q2 25
50 40
75 pF
SWITCHING CHARACTERISTICS
td(on) Turn−On Delay Time Q1:
VDD = 10 V, ID = 1 A, VGS = 4.5V, RGEN = 6 W
Q2:
VDD = −10 V, ID = −1 A, VGS = −4.5 V,
RGEN = 6 W
Q1
Q2 4.5
4.7 10
10 ns
trRise Time Q1
Q2 2.0
4.8 10
10
td(off) Turn−Off Delay Time Q1
Q2 15
33 27
53
tfFall Time Q1
Q2 1.7
16 10
29
QgTotal Gate Charge Q1:
VDD = 10 V, ID = 3.4 A, VGS = 4.5 V
Q2:
VDD = −10 V, ID = −2.3 A, VGS = −4.5 V
Q1
Q2 3
5.5 4.2
7.7 nC
Qgs Gate to Source Gate Charge Q1
Q2 0.4
0.6
Qgd Gate to Drain “Miller” Charge Q1
Q2 0.6
1.4
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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol UnitsMax.Typ.Min.TypeTest ConditionsParameter
DRAIN−SOURCE DIODE CHARACTERISTICS TJ = 25°C unless otherwise noted.
VSD Source to Drain Diode Forward
Voltage VGS = 0 V, IS = 0.9 A (Note 2)
VGS = 0 V, IS = −0.9 A (Note 2) Q1
Q2 0.7
−0.8 1.2
−1.2 V
trr Reverse Recovery Time Q1:
IF = 3.4 A, Di/Dt = 100 A/ms
Q2:
IF = −2.3 A, Di/Dt = 100 A/ms
Q1
Q2 8.5
16 17
29 ns
Qrr Reverse Recovery Charge Q1
Q2 1.4
4.4 10
10 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. RθJC is guaranteed
by design while RθCA is determined by the user’s board design.
a. 90 °C/W when mounted on
a 1 in2 pad of 2 oz copper b. 195 °C/W when mounted on
a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0 %.
3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied.
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TYPICAL CHARACTERISTICS (Q1 N−CHANNEL) TJ = 25°C unless otherwise noted.
Figure 1. On-Region Characteristics Figure 2. Normalized On−Resistance
vs. Drain Current and Gate Voltage
Figure 3. Normalized On Resistance vs. Junction
Temperature Figure 4. On−Resistance vs. Gate to
Source Voltage
Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward
Voltage vs. Source Current
0.0 0.5 1.0 1.5
0
2
4
6
VGS = 1.8 V
VGS = 3 V
VGS = 4.5 V
VGS = 1.5 V
VGS = 2.5 V
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
ID,DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
0246
0.5
1.0
1.5
2.0
2.5
3.0
VGS = 2.5 V VGS = 3 V
NORMALIZED
DRAIN TO SOURCE ON−RESISTANCE
ID, DRAIN CURRENT (A)
VGS = 4.5 V
VGS = 1.8 V
VGS = 1.5 V
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
−75 −50 −25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6 ID = 3.4 A
VGS = 4.5 V
NORMALIZED
DRAIN TO SOURCE ON−RESISTANCE
TJ, JUNCTION TEMPERATURE ( C)
o1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
0
50
100
150
200
250
300
TJ= 125 oC
ID= 3.4 A
TJ= 25 oC
VGS, GATE TO SOURCE VOLTAGE (V)
rDS(on),DRAIN TO
SOURCE ON−RESISTANCE (mW)
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
0.0 0.5 1.0 1.5 2.0
0
2
4
6
TJ = 150 oC
VDS = 5 V
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
TJ = −55oC
TJ = 25 oC
ID, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V) 0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1
10
TJ = −55oC
TJ = 25 oC
TJ= 150 oC
VGS = 0 V
IS, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
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TYPICAL CHARACTERISTICS (Q1 N−CHANNEL) TJ = 25°C unless otherwise noted.
Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs. Drain to Source Voltage
Figure 9. Forward Bias Safe Operating Area Figure 10. Gate Leakage Current vs.
Gate to Source Voltage
Figure 11. Single Pulse Maximum Power Dissipation
0123
0.0
1.5
3.0
4.5
ID= 3.4 A
VDD = 10 V
VDD = 8 V
VGS, GATE TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
VDD = 12 V
0.1 1 10 20
1
100
500
f = 1 MHz
VGS = 0 V
CAPACITANCE (pF)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Crss
Coss
Ciss
0.1 1 10 50
0.01
0.1
1
10
1 s
100 ms
DC
100 ms
10 ms
1 ms
10 s
ID, DRAIN CURRENT (A)
VDS, DRAIN to SOURCE VOLTAGE (V)
THIS AREA IS
LIMITED BY r
DS(on)
SINGLE PULSE
TJ = MAX RATED
RqJA = 195 oC/W
TA = 25 oC
03691215
10−9
10−8
10−7
10−6
10−5
10−4
10−3
10−2
10−1
VGS = 0 V
TJ= 25oC
TJ= 125 oC
VGS, GATE TO SOURCE VOLTAGE (V)
Ig,GATE LEAKAGE CURRENT (A)
10−4 10−3 10−2 10−1 11 0 100 1000
1
10
100
P(PK), PEAK TRANSIENT POWER (W)
SINGLE PULSE
RqJA = 195 oC/W
TA = 25 oC
t, PULSE WIDTH (s)
0.5
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TYPICAL CHARACTERISTICS (Q1 N−CHANNEL) TJ = 25°C unless otherwise noted.
Figure 12. Junction−to−Ambient Transient Thermal Response Curve
10−4 10−3 10−2 10−1 11 0 100 1000
0.005
0.01
0.1
1
2
SINGLE PULSE
RqJA = 195 oC/W
DUTY CYCLE−DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE, ZqJA
t, RECTANGULAR PULSE DURATION (sec)
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZqJA x RqJA + TA
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TYPICAL CHARACTERISTICS (Q2 P−CHANNEL) TJ = 25°C unless otherwise noted.
Figure 13. On-Region Characteristics Figure 14. Normalized On−Resistance
vs. Drain Current and Gate Voltage
Figure 15. Normalized On−Resistance
vs. Junction Temperature Figure 16. On Resistance
vs. Gate to Source Voltage
Figure 17. Transfer Characteristics Figure 18. Source to Drain Diode Forward Voltage
vs. Source Current
00.51.01.52.0
0
2
4
6
VGS = -3 V VGS = -2.5 V
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
VGS = −
1.8 V
VGS = −1.5 V
VGS = -4.5 V
−ID,DRAIN CURRENT (A)
−VDS, DRAIN TO SOURCE VOLTAGE (V)
0246
0
1
2
3
VGS = −1.8 V
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON−RESISTANCE
−ID, DRAIN CURRENT (A)
VGS = -4.5 V
VGS = −2.5 V
VGS = −1.5 V
VGS = -3 V
−75 −50 −25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6 ID
GS = −4.5 V
NORMALIZED
DRAIN TO SOURCE ON−RESISTANCE
TJ, JUNCTION TEMPERATURE (oC)
ID= − 2.3 A
TJ= 25oC
TJ= 125oC
−VGS, GATE TO SOURCE VOLTAGE (V)
rDS(on),DRAIN TO
SOURCE ON−RESISTANCE (mW)
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
0.0 0.5 1.0 1.5 2.0
0
2
4
6
VDS = −5 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
TJ = −55oC
TJ = 25 oC
TJ= 150 oC
−ID, DRAIN CURRENT (A)
−VGS, GATE TO SOURCE VOLTAGE (V) 0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1
10
TJ = −55oC
TJ = 25 oC
TJ= 150 oC
VGS= 0 V
−IS, REVERSE DRAIN CURRENT (A)
−VSD, BODY DIODE FORWARD VOLTAGE (V)
1.0
0
100
200
300
400
500
1.5 2.0 2.5 3.0 3.5 4.0 4.5
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TYPICAL CHARACTERISTICS (Q2 N−CHANNEL) TJ = 25°C unless otherwise noted.
Figure 19. Gate Charge Characteristics Figure 20. Capacitance vs. Drain to Source
Voltage
Figure 21. Forward Bias Safe Operating Area Figure 22. Gate Leakage Current
vs. Gate to Source Voltage
Figure 23. Single Pulse Maximum Power Dissipation
0246
0.0
1.5
3.0
4.5
ID= −2.3 A
VDD = −10 V
VDD= −8 V
−VGS, GATE TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
VDD = −12 V
0.1 1 10 20
10
100
1000
f = 1 MHz
VGS = 0 V
CAPACITANCE (pF)
−VDS, DRAIN TO SOURCE VOLTAGE (V)
Crss
Coss
Ciss
0.1 1 10 60
0.01
0.1
1
10
100 us
DC
10 s
1 s
100 ms
10 ms
1 ms
−ID, DRAIN CURRENT (A)
−VDS, DRAIN to SOURCE VOLTAGE (V)
THIS AREA IS
LIMITED BY r
DS(on)
J
qJA = 195 o
A = 25 oC
SINGLE PULSE
T = MAX RATED
RC/W
T
03691215
10−9
10−8
10−7
10−6
10−5
10−4
10−3
10−2
10−1
VDS = 0 V
TJ= 25 oC
TJ= 125 oC
−VGS, GATE TO SOURCE VOLTAGE (V)
−Ig,GATE LEAKAGE CURRENT (A)
10−4 10−3 10−2 10−1 110
100 1000
0.3
1
10
100
1000
P(PK), PEAK TRANSIENT POWER (W)
SINGLE PULSE
RqJA = 195 o
A = 25 oC
t, PULSE WIDTH (s)
C/W
T
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TYPICAL CHARACTERISTICS (Q2 P−CHANNEL) TJ = 25°C unless otherwise noted.
Figure 24. Junction −to−Ambient Transient Thermal Response Curve
10−4 10−3 10−2 10−1 11 0 100 1000
0.001
0.01
0.1
1
SINGLE PULSE
RqJA = 195 oC/W
DUTY CYCLE−DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE, ZqJA
t, RECTANGULAR PULSE DURATION (s)
D = 0.5
0.2
0.1
0.05
0.02
0.01
2
PDM
t1t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZqJA x RqJA + TA
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or
other countries.
UDFN6 1.6x1.6, 0.5P
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ISSUE O
DATE 31 OCT 2016
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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