AP2306AGEN-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Capable of 2.5V Gate Drive D Small Outline Package Surface Mount Device S RoHS Compliant & Halogen-Free SOT-23 BVDSS 30V RDS(ON) 50m ID 4.1A G Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness device. The SOT-23 package is widely used for commercial-industrial applications. D G S Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25 ID@TA=70 Rating Units 30 V +6 V 3 4.1 A 3 3.3 A 16 A 1.38 W Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V 1 IDM Pulsed Drain Current PD@TA=25 Total Power Dissipation TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 3 Value Unit 90 /W 1 201208081 AP2306AGEN-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units 30 - - V BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA RDS(ON) Static Drain-Source On-Resistance2 VGS=4.5V, ID=4A - - 50 m VGS=2.5V, ID=3A - - 72 m 0.5 - 1.5 V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA gfs Forward Transconductance VDS=10V, ID=3A - 15 - S IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS=+6V, VDS=0V - - +30 uA Qg Total Gate Charge ID=3A - 8.7 14 nC Qgs Gate-Source Charge VDS=15V - 1.3 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 3.5 - nC td(on) Turn-on Delay Time VDS=15V - 65 - ns tr Rise Time ID=1A - 130 - ns td(off) Turn-off Delay Time RG=3.3 - 470 - ns tf Fall Time VGS=5V - 290 - ns Ciss Input Capacitance VGS=0V - 610 1000 pF Coss Output Capacitance VDS=25V - 60 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 50 - pF Min. Typ. Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage IS=1.2A, VGS=0V - - 1.2 V trr Reverse Recovery Time IS=6A, VGS=0V, - 220 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 600 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board ; 270/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP2306AGEN-HF 20 16 T A = 25 o C ID , Drain Current (A) 16 ID , Drain Current (A) o TA=150 C 5.0V 4.5V 3.5V 2.5V 12 8 V G = 2.0 V 5.0V 4.5V 3.5V 2.5V 12 8 V G = 2.0 V 4 4 0 0 0.0 2.0 4.0 6.0 8.0 10.0 0.0 2.0 8.0 Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.0 I D =3A I D =4A V G =4.5V T A =25 o C 60 1.6 Normalized RDS(ON) RDS(ON) (m) 6.0 V DS , Drain-to-Source Voltage (V) 70 50 40 1.2 0.8 0.4 30 0 2 4 6 -50 8 100 150 Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.0 3.0 1.5 Normalized VGS(th) (V) 4.0 T j =150 o C 50 T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage 2.0 0 o V GS , Gate-to-Source Voltage (V) IS(A) 4.0 V DS , Drain-to-Source Voltage (V) T j =25 o C 1.0 1.0 0.5 0.0 0.0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP2306AGEN-HF f=1.0MHz 8 800 6 600 V DS =15V V DS =18V V DS =24V C (pF) VGS , Gate to Source Voltage (V) I D =3A 4 400 2 200 0 0 0.0 4.0 8.0 12.0 C iss C oss C rss 1 16.0 5 Fig 7. Gate Charge Characteristics 13 17 21 25 29 Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response (Rthja) 100 10 100us ID (A) 9 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) 1 1ms 10ms 0.1 100ms 1s DC o T A =25 C Single Pulse Duty factor=0.5 0.2 0.1 0.1 PDM t 0.05 T Duty factor = t/T Peak Tj = PDM x Rthja + T a 0.02 Rthja = 270/W 0.01 Single Pulse 0.01 0.01 0.1 1 10 100 0.0001 0.001 0.01 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area VDS 90% 0.1 1 10 100 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Circuit 4