A
P2306AGEN-H
F
Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Capable of 2.5V Gate Drive BVDSS 30V
▼ Small Outline Package RDS(ON) 50mΩ
▼ Surface Mount Device ID4.1A
▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TA=25℃A
ID@TA=70℃A
IDM A
PD@TA=25℃W
TSTG ℃
TJ℃
Symbol Value Unit
Rthj-a Maximum Thermal Resistance, Junction-ambient390 ℃/W
Data and specifications subject to change without notice
Thermal Data
Parameter
1
Operating Junction Temperature Range -55 to 150
Continuous Drain Current3, VGS @ 4.5V 3.3
Pulsed Drain Current116
Storage Temperature Range
Total Power Dissipation 1.38
-55 to 150
Gate-Source Voltage +6
Continuous Drain Current3, VGS @ 4.5V 4.1
Parameter Rating
Drain-Source Voltage 30
201208081
Halogen-Free Product
D
G
S
SOT-23
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and cost-
effectiveness device.
The SOT-23 package is widely used for commercial-industrial applications.
G
D
S
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V
RDS(ON) Static Drain-Source On-Resistance2VGS=4.5V, ID=4A - - 50 mΩ
VGS=2.5V, ID=3A - - 72 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 0.5 - 1.5 V
gfs Forward Transconductance VDS=10V, ID=3A - 15 - S
IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 10 uA
IGSS Gate-Source Leakage VGS=+6V, VDS=0V - - +30 uA
QgTotal Gate Charge ID=3A - 8.7 14 nC
Qgs Gate-Source Charge VDS=15V - 1.3 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 3.5 - nC
td(on) Turn-on Delay Time VDS=15V - 65 - ns
trRise Time ID=1A - 130 - ns
td(off) Turn-off Delay Time RG=3.3Ω- 470 - ns
tfFall Time VGS=5V - 290 - ns
Ciss Input Capacitance VGS=0V - 610 1000 pF
Coss Output Capacitance VDS=25V - 60 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 50 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=1.2A, VGS=0V - - 1.2 V
trr Reverse Recovery Time IS=6A, VGS=0V, - 220 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 600 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2306AGEN-HF
A
P2306AGEN-H
F
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
30
40
50
60
70
02468
VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
ID=3A
TA=25oC
0.4
0.8
1.2
1.6
2.0
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID=4A
VG=4.5V
0.0
1.0
2.0
3.0
4.0
0 0.2 0.4 0.6 0.8 1 1.2
VSD , Source-to-Drain Voltage (V)
IS(A)
Tj=25oCTj=150oC
0.0
0.5
1.0
1.5
2.0
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized VGS(th) (V)
0
4
8
12
16
20
0.0 2.0 4.0 6.0 8.0 10.0
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=25oC5.0V
4.5V
3.5V
2.5V
VG=2.0V
0
4
8
12
16
0.0 2.0 4.0 6.0 8.0
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=150oC5.0V
4.5V
3.5V
2.5V
VG=2.0V
AP2306AGEN-H
F
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Circuit
4
0
200
400
600
800
1 5 9 13 17 21 25 29
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
0
2
4
6
8
0.0 4.0 8.0 12.0 16.0
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
ID=3A
VDS =15V
VDS =18V
V DS =24V
Q
VG
4.5V
QGS QGD
QG
Charge
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthja)
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 270℃/W
tT
0.02
0.01
0.1
1
10
100
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
ID (A)
TA=25oC
Single Pulse
100us
1ms
10ms
100ms
1s
DC
td(on) trtd(off)tf
VDS
VGS
10%
90%
