CM150DY-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMODTM H-Series Module 150 Amperes/1200 Volts A B H E E H C2E1 C1 G K G1 E1 C E2 E2 G2 S S L Description: Powerex IGBTMODTM Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. R - M5 THD (3 TYP.) P - DIA. (2 TYP.) J N J .110 TAB J N M D F Q G2 E2 C2E1 E2 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Inches Millimeters A 3.70 94.0 K 0.51 13.0 B 3.1500.01 80.00.25 L 0.47 12.0 C 1.89 48.0 M 0.30 7.5 D 1.18 Max. 30.0 Max. N 0.28 7.0 E 0.90 23.0 P 0.256 Dia. Dia. 6.5 F 0.83 21.2 Q 0.26 6.5 G 0.71 18.0 R M5 Metric M5 H 0.67 17.0 S 0.16 4.0 J 0.63 16.0 Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery (135ns) Free Wheel Diode High Frequency Operation (20-25kHz) Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies Laser Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM150DY-24H is a 1200V (VCES), 150 Ampere Dual IGBTMODTM Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 150 24 265 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM150DY-24H Dual IGBTMODTM H-Series Module 150 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25 C unless otherwise specified Ratings Symbol CM150DY-24H Units Junction Temperature Tj -40 to 150 C Storage Temperature Tstg -40 to 125 C Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts Gate-Emitter Voltage VGES 20 Volts IC 150 Amperes ICM 300* Amperes Collector Current Peak Collector Current Diode Forward Current IF 150 Amperes Diode Forward Surge Current IFM 300* Amperes Power Dissipation Pd 1100 Watts - 17 in-lb Max. Mounting Torque M5 Terminal Screws Max. Mounting Torque M6 Mounting Screws - 26 in-lb Module Weight (Typical) - 270 Grams VRMS 2500 Volts V Isolation * Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating. Static Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V - - 1.0 mA Gate Leakage Current IGES VGE = VGES, VCE = 0V - - 0.5 A Gate-Emitter Threshold Voltage VGE(th) IC = 15mA, VCE = 10V 4.5 6.0 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 150A, VGE = 15V - 2.5 3.4** Volts IC = 150A, VGE = 15V, Tj = 150C - 2.25 - Volts Total Gate Charge QG VCC = 600V, IC = 150A, VGS = 15V - 750 - nC Diode Forward Voltage VFM IE = 150A, VGS = 0V - - 3.5 Volts Min. Typ. Max. Units - - 30 - - 10.5 nF - - 6 nF ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Resistive Turn-on Delay Time td(on) Load Rise Time Switching Turn-off Delay Time Times Fall Time Test Conditions VGE = 0V, VCE = 10V, f = 1MHz nF - - 250 ns tr VCC = 600V, IC = 150A, - - 350 ns td(off) VGE1 = VGE2 = 15V, RG = 2.1 - - 300 ns - - 350 ns tf Diode Reverse Recovery Time trr IE = 150A, diE/dt = -300A/s - - 250 ns Diode Reverse Recovery Charge Qrr IE = 150A, diE/dt = -300A/s - 1.11 - C Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified 266 Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case Rth(j-c) Per IGBT - - 0.11 C/W Thermal Resistance, Junction to Case Rth(j-c) Per FWDi - - 0.24 C/W Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied - - 0.065 C/W Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM150DY-24H Dual IGBTMODTM H-Series Module 150 Amperes/1200 Volts 300 15 VGE = 20V 200 11 150 10 100 9 50 5 12 7 VCE = 10V Tj = 25C Tj = 125C 250 200 150 100 50 8 0 0 0 2 4 6 8 0 10 4 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 12 16 1 0 50 100 150 200 250 300 COLLECTOR-CURRENT, IC, (AMPERES) CAPACITANCE VS. VCE (TYPICAL) 102 4 2 IC = 60A 0 8 12 16 102 0 0.8 1.6 2.4 3.2 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) REVERSE RECOVERY TIME, t rr, (ns) td(on) 102 td(off) VCC = 600V VGE = 15V RG = 2.1 Tj = 125C tr 102 COLLECTOR CURRENT, IC, (AMPERES) 103 Cres Irr t rr 102 102 EMITTER CURRENT, IE, (AMPERES) 101 102 GATE CHARGE, VGE 101 di/dt = -300A/sec Tj = 25C 101 101 100 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 102 103 tf 100 10-1 10-1 4.0 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 103 Coes VGE = 0V f = 1MHz 101 20 CAPACITANCE, Cies, Coes, Cres, (nF) IC = 150A Cies 101 100 103 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 6 REVERSE RECOVERY CURRENT, Irr, (AMPERES) EMITTER CURRENT, IE, (AMPERES) IC = 300A 101 101 2 Tj = 25C 8 4 3 0 20 103 Tj = 25C 0 4 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 8 VGE = 15V Tj = 25C Tj = 125C GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) SWITCHING TIME, (ns) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25oC COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 300 250 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 16 VCC = 400V VCC = 600V 12 8 4 0 0 200 400 600 800 1000 1200 GATE CHARGE, QG, (nC) 267 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 10-3 101 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100 Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.11C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 268 101 10-4 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORMALIZED VALUE) CM150DY-24H Dual IGBTMODTM H-Series Module 150 Amperes/1200 Volts 10-3 101 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100 101 Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.24C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3