RF01001, Rev. A (xxxx) ©2012 Microsemi Corporation Page 1 of 6
MSMCG5.0A thru MXLSMCG170CA, e3
Available Surface Mount 1500 Watt
Transient Voltage Suppressor
Screening in
reference to
MIL-PRF-19500
available
DESCRIPTION
The MSMCG5.0A thru MXLSMCG170A series of 1500 watt high-reliability controlled Transient
Voltage Suppressors (TVSs) protects a variety of voltage-sensitive components. Its gull-wing
design (SMCG) in the DO-215AB package allows for visible solder connections. Selections include
unidirectional and bidirectional as well as RoHS compliant versions. These are available in a
variety of screened versions. They can protect from secondary lightning effects per IEC61000-4-5
and class levels defined herein, or for inductive switching environments and induced RF protection.
Since their response time is virtually instantaneous, they can also be used in protection from ESD
and EFT per IEC61000-4-2 and IEC61000-4-4. Microsemi also offers numerous other products to
meet higher and lower power voltage regulation applications.
DO-215AB
Gull-wing Package
NOTE: All SMC series are
equivalent to prior SMM package
identifications.
Also available in:
Commercial DO-215AB
package
(Gull-Wing surface mount)
SMCG5.0A thru
SMCG170CAe3
Commercial DO-214AB
package
(J-bend surface mount)
SMCJ5.0A thru
SMCJ170CAe3
Hi-Rel DO-214AB
package
(J-bend surface mount)
MSMCJ5.0A thru
MXLSMCJ170CAe3
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
High reliability controlled devices with fabrication and assembly lot traceability.
100% surge tested devices.
3σ lot norm screening performed on Standby Current ID.
Available in both unidirectional and bidirectional construction.
Moisture classification is Level 1with no dry pack required per IPC/JEDEC J-STD-020B.
Other screening options are available in reference to MIL-PRF-19500.
(See part nomenclature for all available options).
Refer to MicroNote 129 for mo re detail s on the screen ing options.
RoHS compliant versions available.
Axial-lead equivalent packages for thru-hole mo unting are available as 1.5KE 6. 8A to 1.5KE 200C A
or 1N6267 thru 1N6303A and 1N5908 (contact Microsemi for other surface mount options).
APPLICATIONS / BENEFITS
Protection from switch ing tr an sien ts and indu ced RF.
Protection from ESD, and EFT per IEC 61000-4-2 and IEC 61000-4-4.
Secondary lightning protection per IEC61000-4-5 with 42 ohms sour ce imp edan ce:
Class 1: MSMCG 5.0A to MXLSMCG 170A or CA
Class 2: MSMCG 5.0A to MXLSMCG 150A or CA
Class 3: MSMCG 5.0A to MXLSMCG 75A or CA
Class 4: MSMCG 5.0A to MXLSMCG 36A or CA
Secondary lightning protection per IEC61000-4-5 with 12 ohms sour ce imp edan ce:
Class 1 : MSMCG 5.0A to MXLSMCG 90A or CA
Class 2: MSMCG 5.0A to MXLSMCG 45A or CA
Class 3: MSMCG 5.0A to MXLSMCG 24A or CA
Class 4: MSMCG 5.0A to MXLSMCG 11A or CA
Secondary lightning protection per IEC61000-4-5 with 2 ohms source impedance:
Class 2: MSMCG 5.0A to MXLSMCG 22A or CA
Class 3: MSMCG 5.0A to MXLSMCG 10A or CA
MSC Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
RF01001, Rev. A (xxxx) ©2012 Microsemi Corporation Page 2 of 6
MSMCG5.0A thru MXLSMCG170CA, e3
MAXIMUM RATINGS
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature
TJ and TSTG
-65 to +150
ºC
Thermal Resi stan ce Jun cti on-to-Lead
RӨJL
20
ºC/W
Thermal Resi stan ce Jun cti on-to-Ambient (1)
RӨJA
80
ºC/W
Peak Pulse Power dissipation @ 25 ºC (at 10/1000 µs,
see Figures 1, 2, and 3)
P
PP
1500
W
Impulse Repetition Rate (duty factor)
df
0.01
%
t
clamping
(0 volts to V
(BR)
min.)
t
clamping
<100
<5
ps
ns
Off-State Power Dissipation
L
P
D
6
1.56
(1)
W
Maximum Forward Surge Current (2)
I
FSM
200
A (pk)
Solder Temperature @ 10 s
TSP
260
oC
Notes: 1. When mounted on FR4 PC board (1oz Cu) with recommended footprint (see l ast page).
2. Peak impulse of 8.3 ms half-sine wave at 25 ºC (unidirectional only).
MECHANICAL and PACKAGING
CASE: Void-free transfer molded thermosetting epoxy body meeting UL94V-0.
TERMINALS: Gull-wing, tin-lead (90% Sn, 10% Pb) or RoHS compli ant anne aled matte-tin (100% Sn) plat ing. Solderable to
MIL-STD-750, method 2026.
MARKING: Part number m ar k ed on package.
POLARITY: Cathode indicated by band. No cathode band on bi-directional devices.
TAPE & REEL option: Standard per EIA-481-2 with 12 mm tape (add “TR” suffix to part number). Consult factory for quantities.
WEIGHT: 0.25 grams (approximate).
See Package Dimensions on last page.
PART NOMENCLATURE
MX SM C G 5.0 C A e3
Reliability Level
M (controlled product)
MA (Avionics grade)
MX (reference JANTX)
MXL (MX Lite)
Surface Mount
Package
1500 W Power Level
Gull-wing Lead Frame
RoHS Compliance
e3 = RoHS Compliant
Blank = non-RoHS Compliant
+/- 5% Tolerance Level
Uni/Bidirectional
C = Bidirectional
Blank = Unidirectional
Reverse Stand-Off Voltage
(see Electrical Characteristics
table)
RF01001, Rev. A (xxxx) ©2012 Microsemi Corporation Page 3 of 6
MSMCG5.0A thru MXLSMCG170CA, e3
SYMBOLS & DEFINITIONS
Symbol
Definition
I(BR)
Breakdown Current: T he current used for mea suri ng breakdown voltage V(BR).
ID
Standby Current: The current at the rated standoff voltage (VWM).
IF
Forward Current: The forward current dc value, no alternating component.
IO
Average Rectified Output Current: The output current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave input
and a 180 degree conduction angle .
IPP
Peak Impulse Current: The peak current during the impulse.
PPP
Peak Pulse Power: The peak power dissipation resulting from the peak impulse current IPP.
VC
Maximum Clamping Voltage at specified IPP (Peak Pulse Current) at the specified pulse conditions.
V(BR)
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified cu rrent.
VWM
Working Peak Voltage: The maximum peak voltage that can be applied over the operating temperature range. This is
also referred to as standoff voltage.
ELECTRICAL CHARACTERISTICS @ 25 ºC unless otherwise stated
MICROSEMI
PART
NUMBER
REVERSE
STAND-OFF
VOLTAGE
VWM
Volts
BREAKDOWN
VOLTAGE
V(BR) @ I(BR)
Volts
MAXIMUM
CLAMPING
VOLTAGE
@ IPP
Volts
PEAK PULSE
CURRENT
(See Fig . 2 )
IPP
Amps
MAXIMUM
STANDBY
CURRENT
@ VWM
ID
µA
MIN. MAX.
I
(BR)
mA
MSMCG5.0A
MSMCG6.0A
5.0
6.0
6.40 7.00
6.67 7.37
10
10
9.2
10.3
163.0
145.6
1000
1000
MSMCG6.5A
MSMCG7.0A
6.5
7.0
7.22 7.98
7.78 8.60
10
10
11.2
12.0
133.9
125.0
500
200
MSMCG7.5A
MSMCG8.0A
7.5
8.0
8.33 9.21
8.89 9.83
1
1
12.9
13.6
116.3
110.3
100
50
MSMCG8.5A
MSMCG9.0A
8.5
9.0
9.44 10.4
10.0 11.1
1
1
14.4
15.4
104.2
97.4
20
10
MSMCG10A
MSMCG11A
10
11
11.1 12.3
12.2 13.5
1
1
17.0
18.2
88.2
82.4
5
5
MSMCG12A
MSMCG13A
12
13
13.3 14.7
14.4 15.9
1
1
19.9
21.5
75.3
69.7
5
1
MSMCG14A
MSMCG15A
14
15
15.6 17.2
16.7 18.5
1
1
23.2
24.4
64.7
61.5
1
1
MSMCG16A
MSMCG17A
16
17
17.8 19.7
18.9 20.9
1
1
26.0
27.6
57.7
53.3
1
1
MSMCG18A
MSMCG20A
18
20
20.0 22.1
22.2 24.5
1
1
29.2
32.4
51.4
46.3
1
1
MSMCG22A
MSMCG24A
22
24
24.4 26.9
26.7 29.5
1
1
35.5
38.9
42.2
38.6
1
1
MSMCG26A
MSMCG28A
26
28
28.9 31.9
31.1 34.4
1
1
42.1
45.4
35.6
33.0
1
1
MSMCG30A
MSMCG33A
30
33
33.3 36.8
36.7 40.6
1
1
48.4
53.3
31.0
28.1
1
1
MSMCG36A
MSMCG40A
36
40
40.0 44.2
44.4 49.1
1
1
58.1
64.5
25.8
23.2
1
1
MSMCG43A
MSMCG45A
43
45
47.8 52.8
50.0 55.3
1
1
69.4
72.7
21.6
20.6
1
1
MSMCG48A
MSMCG51A
48
51
53.3 58.9
56.7 62.7
1
1
77.4
82.4
19.4
18.2
1
1
MSMCG54A
MSMCG58A
54
58
60.0 66.3
64.4 71.2
1
1
87.1
93.6
17.2
16.0
1
1
MSMCG60A
MSMCG64A
60
64
66.7 73.7
71.1 78.6
1
1
96.8
103.0
15.5
14.6
1
1
MSMCG70A
MSMCG75A
70
75
77.8 86.0
83.3 92.1
1
1
113
121
13.3
12.4
1
1
Continued.
RF01001, Rev. A (xxxx) ©2012 Microsemi Corporation Page 4 of 6
MSMCG5.0A thru MXLSMCG170CA, e3
ELECTRICAL CHARACTERISTICS @ 25 ºC unless otherwise stated (continued)
MICROSEMI
PART
NUMBER
REVERSE
STAND-OFF
VOLTAGE
VWM
Volts
BREAKDOWN
VOLTAGE
V(BR) @ I(BR)
Volts
MAXIMUM
CLAMPING
VOLTAGE
@ IPP
Volts
PEAK PULSE
CURRENT
(See Fig . 2 )
IPP
Amps
MAXIMUM
STANDBY
CURRENT
@ VWM
ID
µA
MIN. MAX.
I
(BR)
mA
MSMCG78A
MSMCG85A
78
85
86.7 95.8
94.4 104.0
1
1
126
137
11.4
10.4
1
1
MSMCG90A
MSMCG100A
90
100
100 111
111 123
1
1
146
162
10.3
9.3
1
1
MSMCG110A
MSMCG120A
110
120
122 135
133 147
1
1
177
193
8.4
7.8
1
1
MSMCG130A
MSMCG150A
130
150
144 159
167 185
1
1
209
243
7.2
6.2
1
1
MSMCG160A
MSMCG170A
160
170
178 197
189 209
1
1
259
275
5.8
5.5
1
1
NOTE 1: For bidirect i onal device t ypes indicate a CA suffix after t he part number. (i.e.: MSMCG170CA). Bidirectional c apaci t anc e is
half that shown in Figure 4 at zero volts.
NOTE 2: Microsem i Corp’s MSMC series (1500 W) surface mountable packages are designed specifical l y for transient volt age suppression.
The wide leads assure a large surface contact for good heat dissipation, and a low resistanc e path for surge current flow to ground.
These high speed transient volt age suppress ors c an be used to effectively protect sensitive components s uch as int egrated circuits
and MOS device.
RF01001, Rev. A (xxxx) ©2012 Microsemi Corporation Page 5 of 6
MSMCG5.0A thru MXLSMCG170CA, e3
GRAPHS
t – Time (msec)
tp Pulse Time sec
FIGURE 2 – Pulse Waveform
FIGURE 1 Peak Pulse Power vs. Pulse Time
TL Lead Temperature oC BVBreakdown Voltage (V)
FIGURE 3 Derating Curve FIGURE 4
Typical Capacitance vs.
Breakdown Voltag e
1µs 10µsec 100µsec 1ms 10ms
(P
PP
) Peak Pulse Power - kW
(Waveform See Figure 2)
Non-repetitive
Peak Pulse Power (
P
PP) or continuous
Power in Percent of 25
o
C Rating
100
10
1.0
0
I
PP
Peak Pulse Current - % I
PP
C Capacitance (pF)
Test wave form
parameters
tr = 10 µ
sec.
tp = 1000 µsec.
RF01001, Rev. A (xxxx) ©2012 Microsemi Corporation Page 6 of 6
MSMCG5.0A thru MXLSMCG170CA, e3
PACKAGE DIMENSIONS
NOTES: Dimension “Eexceeds the JEDEC outline as shown.
Typical Standoff Height: 0.004” 0.008” (0.1 mm 0.2 mm).
PAD LAYOUT
Dimensions
Ltr
Inch
Millimeters
Min
Max
Min
Max
A
.115
.121
2.92
3.07
B
.260
.280
6.60
7.11
C
.220
.245
5.59
6.22
E
.077
.110
1.95
2.80
F
.380
.400
9.65
10.16
K
.025
.040
0.635
1.016
Ltr
Inch
Millimeters
A
.510
12.95
B
.110
2.79
C
.150
3.81