DATA SHEET BFX34 NPN SILICON TRANSISTOR JEDEC TO-39 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR BFX34 is a silicon NPN transistor designed for switching and general purpose applications where a high collector current (5.0 AMPS) is required. MAXIMUM RATINGS (TA=25C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current IC Power Dissipation PD Power Dissipation (TC=25C) PD Operating and Storage Junction Temperature TJ,Tstg Thermal Resistance JA Thermal Resistance JC 120 60 6.0 5.0 1.0 UNITS V V V A W 5.0 W -65 to +200 C 175 C/W 35 C/W ELECTRICAL CHARACTERISTICS (TA=25C unless otherwise noted) SYMBOL ICES IEBO BVCBO BVCEO BVEBO VCE(SAT) VBE(SAT) hFE fT Cob Cib ton toff TEST CONDITIONS VCE=60V VEB=4.0V IC=5.0mA IC=100mA IE=1.0mA IC=5.0A, IB=0.5A IC=5.0A, IB=0.5A VCE=2.0V, IC=2.0A VCE=5.0V, IC=0.5A, f=20MHz VCB=10V, IE=0, f=1.0MHz VEB=0.5V, IC=0, f=1.0MHz VCC=20V, IC=5.0A, IB1= IB2=0.5A VCC=20V, IC=5.0A, IB1= IB2=0.5A MIN MAX 10 10 UNITS A A V V V V V 120 60 6.0 40 70 1.0 1.6 150 MHz pF pF s s 100 500 0.6 1.2 (SEE REVERSE SIDE) R1 BFX34 NPN SILICON TRANSISTOR TO-39 PACKAGE - MECHANICAL OUTLINE A B SYMBOL A (DIA) B (DIA) C D E F (DIA) G (DIA) H I J D C E F G H LEAD #2 LEAD #1 LEAD #3 45 J I R1 Lead Code 1) Emitter 2) Base 3) Collector DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0.335 0.370 8.51 9.40 0.315 0.335 8.00 8.51 0.040 1.02 0.240 0.260 6.10 6.60 0.500 12.70 0.016 0.021 0.41 0.53 0.200 5.08 0.100 2.54 0.028 0.034 0.71 0.86 0.029 0.045 0.74 1.14 TO-39 (REV: R1)