poy i 2N5810 THROUGH 2N5819 COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTORS CASE TO-92F WITH X-67 LEAD PREFORMED HEAT SINK THE 2N5810 THROUGH 2N5819 ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF DRIVERS AND OUTPUTS, AS WELL AS FOR UNIVERSAL APPLICATIONS. THEY ARE SUPPLIED IN T0-92F PLASTIC CASE WITH OPTIONAL X-67 HEAT SINK. THE 2N5810, 2, 4, 6, 8 ot 5 ARE NPN AND ARE COMPLEMENTARY TO THE PNP : i 2N5811, 33; 59 Ts 9 LB 48 ~ ~ eo 2N5810, teen 2N5814, 6, cone ABSOLUTE MAXIMUM RATINGS For pn-p devices, voltage and current values are negative, 2N5811, 3(PNP) 2N5815, 7, 9(PNP Collector-Base Voltage VeBo 359 50V Collector-Emitter Voltage (VBE=0) VES 35V 50V | Collector-Enitter Voltage (Ip=0) VCEO 25V 40V Emitter-Base Voltage VERO 5V Collector Current Ic 0.754 pm, Collector Peak Current (t<10ms) IcM 1.54 otal. Power Dissipation @ T<25 Pteot o 1.4W | a With X-67 Heat Sink @ Ta<25C s00mW No Heat Sink @ Ta<25C 625mwW # . | Operating Junction & Storage Temperature Tj, Tstg ~55 to 150C * SOOmW in JEDEC registration. - Ptot vs Ic : Hre (NORMALTZES) vs Ic Brg (NORMALIZED) 1 10COi= 100 1000 Ic (mA) 38 HUNG TO ROAD, KWUN TONG, HONG KONG. TELEX 3510 MICRO ELECTRONICS LTD. sx .roye * .souou7 cams soonss Mceormon, | FAX: 3-410321 ELECTRICAL CHARACTERISTICS (TaA=25C unless otherwise noted) VOLT 100 | To (mA) 1000 { PARAMETER sympo, | 2N9810 thrut 2N5819) were | test CONDITIONS . MIN MAX Collector-Base Breakdown Voltage BYCES Ic=0.01lmA VBES6; 2N5810, 1, 2, 3 35 v oO 2N5814, 5, 6, 7, 8, 9 50 v Collector=Emitter Breakdown Voltage LVCEO * Ic=10mA Ip=0 2N5810, 1, 2, 3 25 v 2N5814, 5, 6, 7, 8, 9 40 Vv Collector Cutoff Current Icpo 100 nA | VoB=25V Ipg=0 15 pa VoBp=25V Ige=0 Ta=1000C Emitter Cutoff Current Treo 10 pA VEB=5V IC=0 Collector-Emitter Saturation Voltage | VcE(sat)* 0.75 v Ic=500mA IB=50mA Base-Emitter Saturation Voltage VBE(sat)* 1.2 v Ic=500mA Ip=50mA Base-Emitter Voltage VBE * 0.6 1.1 v |iIg=500mA Vog=2 D.C. Current Gain tre * Io=2mA VcE=2V 2N5810, 1 60 200 2N5812, 3 150 500 2N5814, 5 60 120 2N5816, 7 100 200 2N5818, 9 . 150. 300 D.C. Current Gain Hrrm * I=500mA Vor=2V 2N5810, 1 45 o * 2N5812, 3 60 te ON5814, 5 20 2N5816, 7 25 2N5818, 9 25 Current Gain-Bandwidth Product fo Ic=50mA Ver=2V 2N5810, 1, 4, 5 100 MHz 2N5816, 7 120 MHz 2N5812, 3, 8, 9 135 MHz Collector-Base Capacitance Cob 15 pF | Vop=l0V Ig=0 f=1MHz Emitter-Base Capacitance Cib 55 pF | VeB=0.5V Ic=0 f=1MHz * Pulse Test : Pulse Width=0.3mS, Duty Cycle=1% v Vv Ic. 2.0 CE(sat) & VBE vs tC. . 250 Tae250C se Test 1.6 200 (MHz ) 0.8 100 0.4 50