VN03SP
HIGH SIDE SMART POWER SOLID STATE RELAY
July 1998
TYPE VDSS RDS(on) In(*) VCC
VN03SP 60 V 0.5 Ω0.7 A 26 V
■MAXIMUM CONTINUOUS OUTPUT
CURRENT (#):9 A @ Tc=85oC
■5 V LOGIC LEVEL COMPATIBLEINPUT
■THERMAL SHUT-DOWN
■UNDERVOLTAGE PROTECTION
■OPENDRAIN DIAGNOSTIC OUTPUT
■INDUCTIVE LOAD FAST
DEMAGNETIZATION
■VERYLOW STAND-BY POWER
DISSIPATION
DESCRIPTION
The VN03SP is a monolithic device made using
STMicroelectronics VIPower Technology,
intended for driving resistive or inductive loads
with one side grounded.
Built-in thermal shut-down protects the chip from
over temperatureand short circuit.
The open drain diagnosticoutput indicates: open
load in off state, and in on state,output shorted to
VCC and overtemperature. Fast demagnetization
of inductive loads is archivied by negative (-18V)
load voltageat turn-off.
1
10
PowerSO-10
(*) In = Nominal current according to ISO definition for high side automotive switch (seenote 1)
(#) The maximum continuous output current is the the current at Tc=85o
C for a battery voltage of 13V which does not activate self
protection.
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ABSOLUTE MAXIMUMRATING
Symbol Parameter Value Unit
V(BR)DSS Drain-Source Breakdown Voltage 60 V
IOUT Output Current (cont.) at Tc=85o
C4A
I
R
Reverse Output Current at Tc=85o
C-4A
I
IN Input Current ±10 mA
-VCC Reverse Supply Voltage -4 V
ISTAT Status Current ±10 mA
VESD Electrostatic Discharge (1.5 kΩ, 100 pF) 2000 V
Ptot Power Dissipation at Tc=85o
C14W
T
j
Junction Operating Temperature -40 to 150 oC
Tstg Storage Temperature -55 to 150 oC
CONNECTION DIAGRAMS
CURRENT AND VOLTAGE CONVENTIONS
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THERMAL DATA
Rthj-case
Rthj-amb Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient ($) Max 4.5
50
oC/W
oC/W
($) When mounted using minimum recommended pad size on FR-4 board
ELECTRICAL CHARACTERISTICS (VCC =13 V; -40 ≤Tj≤125 oC unless otherwise specified)
POWER
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VCC Supply Voltage 5.5 13 26 V
In(*) Nominal Current Tc=85o
CV
DS(on) ≤0.5 (note 1) 0.7 A
Ron On State Resistance IOUT =0.7A
I
OUT =0.7A T
j=25o
C1
0.5 Ω
Ω
ISSupply Current Off State Tj≥25 oC
On State 50
15 µA
mA
VDS(MAX) Maximum Voltage Drop IOUT =4A T
c=85o
C3.6V
SWITCHING
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on)(^) Turn-on Delay Time Of
Output Current IOUT = 0.7 A Resistive Load
Input Rise Time < 0.1 µs15 µs
tr(^) Rise Time Of Output
Current IOUT = 0.7 A Resistive Load
Input Rise Time < 0.1 µs10 µs
td(off)(^) Turn-off Delay Time Of
Output Current IOUT = 0.7 A Resistive Load
Input Rise Time < 0.1 µs15 µs
tf(^) Fall Time Of Output
Current IOUT = 0.7 A Resistive Load
Input Rise Time < 0.1 µs4µs
(di/dt)on Turn-on Current Slope IOUT =0.7A
I
OUT =I
OV 0.05 0.5
1A/µs
A/µs
(di/dt)off Turn-off Current Slope IOUT =0.7A
I
OUT =I
OV 0.14 3
3A/µs
A/µs
Vdemag Inductive Load Clamp
Voltage IOUT =0.7A L=1mH -24 -18 -14 V
LOGIC INPUT
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VIL Input Low Level
Voltage 0.8 V
VIH Input High Level
Voltage 2(•)V
V
I(hyst.) Input Hysteresis
Voltage 0.5 V
IIN Input Current VIN =5V
V
IN =2V
V
IN =0.8V 25
250 500
250 µA
µA
µA
VICL Input Clamp Voltage IIN =10mA
I
IN =-10mA 5.5 6
-0.7 -0.3 V
V
VN03SP
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ELECTRICAL CHARACTERISTICS(continued)
PROTECTION AND DIAGNOSTICS
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VSTAT Status Voltage Output
Low ISTAT =1.6mA 0.4 V
V
USD Under Voltage Shut
Down 5V
V
SCL Status Clamp Voltage ISTAT =10mA
I
STAT =-10mA 6
-0.7 V
V
IOV Over Current RLOAD <10mΩ-40 Tc125 oC28A
I
AV Average Current in
Short Circuit RLOAD <10mΩT
c=85o
C0.9A
I
OL Open Load Current
Level 53570mA
T
TSD Thermal Shut-down
Temperature 140 oC
TRReset Temperature 125 oC
VOL Open Load Voltage
Level Off-State (note 2) 2.5 3.75 5 V
t1(on) Open Load Filtering
Time (note 3) 1 5 10 ms
t1(off) Open Load Filtering
Time (note 3) 1 5 10 ms
t2(off) Open Load Filtering
Time (note 3) 1 5 10 ms
tpovl Status Delay (note 3) 5 10 µs
tpol Status Delay (note 3) 50 700 µs
(^) See Switchig Time Waveforms
() The VIH is internallyclamped at 6V about.It ispossible to connect this pin to an higher voltagevia an external resistor calculated to not
exceed 10 mA at the input pin.
note 1:The Nominal Current is the current at Tc=85o
C for battery voltage of 13V which produces a voltage drop of0.5 V
note 2:IOL(off) =(V
CC -VOL)/ROL (see figure)
note 3:t1(on): minimum open loadduration which acctivates the status output
t1(off): minimum load recovery time which desactivates the statusoutput
t2(off): minimum on time after thermal shut down which desactivates status output
tpovl tpol: ISO definition (seefigure)
Note2 RelevantFigure Note3 RelevantFigure
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FUNCTIONAL DESCRIPTION
The device has a diagnostic output which
indicates open load conditions in off state as well
as in on state, output shorted to VCC and
overtemperature. The truth table shows input,
diagnostic and output voltage level in normal
operation and in fault conditions. The output
signals are processed by internal logic. The
open load diagnostic output has a 5 ms filtering.
The filter gives a continuous signal for the fault
condition after an initial delay of about 5 ms. This
means that a disconnection during normal
operation, with a durationof less than 5 ms does
not affect the status output. Equally, any
re-connection of less than 5 ms during a
disconnection duration does not affect the status
output. No delay occur for the status to go low in
case of overtemperature conditions. From the
falling edge of the input signal the status output
initially low in fault condition (over temperature or
open load) will go back with a delay (tpovl)in case
of overtemperature condition and a delay (tpol)in
case of open load. These feature fully comply
with International Standard Office (I.S.O.)
requirement for automotiveHighSide Driver.
To protect the device against short circuit and
over current conditions, the thermal protection
turns the integrated Power MOS off at a
minimum junction temperature of 140 oC.
When the temperature returns to 125 oC the
switch is automatically turned on again.In short
circuit the protection reacts with virtually no
delay, the sensor being located in the region of
the die where the heat is generated. Driving
inductive loads, an internal function of the
device ensures the fast demagnetizationwith a
typicalvoltage (Vdemag) of -18V.
This function allows to greatly reduce the power
dissipationaccording to the formula:
Pdem = 0.5 •Lload •(Iload)2•[(VCC+Vdemag)/Vdemag]
•f
where f = switching frequency and
Vdemag = demagnetizationvoltage
Based on this formula it is possible to know
the value of inductance and/or current to avoid
a thermal shut-down. The maximum inductance
which causes the chip temperature to reach the
shut down temperature in a specific thermal
environment, is infact a function of the load
currentfor a fixed VCC,V
demag and f.
PROTECTING THE DEVICE AGAIST LOAD
DUMP - TEST PULSE 5
The device is able to withstand the test pulse
No. 5 at level II (Vs= 46.5V) according to the
ISO T/R 7637/1 without any external
component. This means that all functions of the
device are performed as designed after
exposure to disturbanceat level II. The VN06SP
is able to withstand the test pulse No.5 at level
III adding an external resistor of 150 ohm
between GND pin and ground plus a filter
capacitor of 1000 µF between VCC pin and
ground(if RLOAD ≤20 Ω).
PROTECTING THE DEVICE AGAINST
REVERSE BATTERY
The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
insert a Schottky diode between GND pin and
ground, as shown in the typical application circuit
(fig.3).
The consequences of the voltage drop across
this diodeare as follows:
If the input is pulled to power GND, a negative
voltage of -Vfis seen by the device. (Vil, Vih
thresholds and Vstat are increased by Vf with
respect to power GND).
The undervoltageshutdown level is increa- sed
by Vf.
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to node [6]
(see application circuit in fig. 4), which becomes
the common signal GND for the whole control
board avoiding shift of Vih,V
il and Vstat. This
solution allows the use of a standard diode.
Switching Time Waveforms
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TRUTH TABLE
INPUT OUTPUT DIAGNOSTIC
Normal Operation L
HL
HH
H
Open Circuit (No Load) H H L
Over-temperature H L L
Under-voltage X L H
ShortloadtoV
CC LHL
Figure1: Waveforms
Figure2: Over Current Test Circuit
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Figure3: TypicalApplicationCircuit With A SchottkyDiode For Reverse SupplyProtection
Figure4: TypicalApplicationCircuit With SeparateSignal Ground
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 3.35 3.65 0.132 0.144
A1 0.00 0.10 0.000 0.004
B 0.40 0.60 0.016 0.024
c 0.35 0.55 0.013 0.022
D 9.40 9.60 0.370 0.378
D1 7.40 7.60 0.291 0.300
E 9.30 9.50 0.366 0.374
E1 7.20 7.40 0.283 0.291
E2 7.20 7.60 0.283 0.300
E3 6.10 6.35 0.240 0.250
E4 5.90 6.10 0.232 0.240
e 1.27 0.050
F 1.25 1.35 0.049 0.053
H 13.80 14.40 0.543 0.567
h 0.50 0.002
L 1.20 1.80 0.047 0.071
q 1.70 0.067
α0o8o
DETAIL”A”
PLANE
SEATING
α
L
A1
F
A1
h
A
D
D1
==
==
==
E4
0.10 A
E1E3
C
Q
A
==
B
B
DETAIL”A”
SEATING
PLANE
==
==
E2
610
51
eB
HE
M
0.25
==
==
0068039-C
PowerSO-10 MECHANICAL DATA
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Information furnished is believed tobe accurate and reliable. However, STMicroelectronicsassumes no responsibility for theconsequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject tochange without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems withoutexpress written approval of STMicroelectronics.
The ST logo isa trademarkof STMicroelectronics
1998 STMicroelectronics – Printed in Italy – All Rights Reserved
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