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ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FPF2487 Dual Channel Over-Voltage Protection Load Switch Features Description The FPF2487 features a 2-channel power switch, which offers surge protection and Over-Voltage Protection (OVP), to protect downstream components and enhancing overall system robustness. Dual Channel Power Switch (VBUS and VIF) Surge Protection under IEC 61000-4-5 VBUS: 100 V VIF: 40 V Input Voltage Range VBUS: 2.5 V ~ 23 V VIF: 3.1 V ~ 5.5 V Max. Continuous Current Capability VBUS: 2.5 A VIF: 6 A Ultra Low On-Resistance VBUS_DET is paired with always ON LDO to power downstream devices even with VBUS is greater than 2.5 V, even when disabled through the ONB pin. This provides power sequence control or a host controlled configuration in system. VBUS: Typ. 33 m VIF: Typ. 11 m Over-Voltage Protection - Channel one (VBUS) is an active-low, 28 V/2.5 A rated, power MOSFET switch with an internal clamp supporting 100 V surge protection, highly accurate fixed OVP at 5.95 V (50 mV), and OTG functionality. Channel two (VIF) is a conditional active-high, 6 V/6 A rated, power MOSFET switch with an integrated TVS supporting 40 V surge protection and fixed OVP at 5.25 V (250 mV). VIF also provides Reverse Current Blocking (RCB) during its OFF state to minimize leakage current. VBUS: 5.95 V 50 mV The FPF2487 is available in a 15-bump, 1.6 mm x 2.2 mm Wafer-Level Chip-Scale Package (WLCSP) with 0.4 mm pitch. VIF: 5.25 V 250 mV LDO Output based VBUS_DET for VBUS Detection Active Low Control for VBUS Path Related Resources OTG Functionality on VBUS Path http://www.fairchildsemi.com/ Conditional Active High Control for VIF Path Reverse-Current Blocking for VIF Path Applications Mobile Handsets and Tablets Wearable Devices Ordering Information Part Number Operating Temperature Top Mark Range FPF2487UCX (c) 2014 Fairchild Semiconductor Corporation FPF2487 * Rev. 1.4 -40C - +85C GX Package 15-Ball, 0.4 mm Pitch WLCSP Packing Method Tape & Reel www.fairchildsemi.com FPF2487 -- Dual Channel Over-Voltage Protection Load Switch February 2015 Travel Adapter VBUS Test JIG VIF Battery Charger VOUT System BAT FPF2487 BATTERY ONB ON PMIC VBUS_DET GND Figure 1. Typical Application Block Diagram FPF2487 VOUT VBUS FPF2487 -- Dual Channel Over-Voltage Protection Load Switch Application Diagram TVS OVLO RCB BAT VIF TVS VBUS UVLO OVLO LDO CONTROL LOGIC w/ Charge pump ONB VBUS_DET ON THERMAL SHUTDOWN GND Figure 2. (c) 2014 Fairchild Semiconductor Corporation FPF2487 * Rev. 1.4 Functional Block Diagram www.fairchildsemi.com 2 1 2 3 3 2 1 A VOUT VOUT ONB ONB VOUT VOUT A B ON VBUS VBUS VBUS VBUS ON B C GND GND VBUS_ DET VBUS_ DET GND GND C D BAT VIF VIF VIF VIF BAT D E BAT BAT VIF VIF BAT BAT E Figure 3. Pin Configuration (Top View) Figure 4. Pin Configuration (Bottom View) Pin Definitions Name Bump Type VBUS B2, B3 Input/Supply Description Switch Input and Device Supply VOUT A1, A2 Output VIF D2, D3, E3 Input/Supply BAT D1, E1, E2 Output Switch Output to Battery VBUS_DET C3 Output Regulated Output according to VBUS ON B1 Input Active HIGH: VIF path only and when BAT is valid prior to VIF ONB A3 Input Active LOW: VBUS path only GND C1, C2 GND Ground (c) 2014 Fairchild Semiconductor Corporation FPF2487 * Rev. 1.4 Switch Output to Load Switch Input and Device Supply FPF2487 -- Dual Channel Over-Voltage Protection Load Switch Pin Configuration www.fairchildsemi.com 3 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameter VBUS Min. Max. Unit -0.3 29.0 V 6 V VBUS to GND & VBUS to VOUT=GND or Float VIF (1) VIF to GND -2 VOUT VOUT to GND -0.3 VIN + 0.3 V BAT BAT to GND -0.3 VIF + 0.3 V VBUS_DET to GND 8 V ONB or ON to GND 6 V Continuous VBUS Current 2.5 A Peak VBUS Current (5 ms) 5 A Continuous VIF Current 6 A Peak VIF Current (5 ms) 12 A Continuous VBUS_DET Current 1 mA 1.54 W +150 C +150 C VBUS_DET VON(B) IIN_VBUS IIN_VIF IIN_VBUS_DET tPD TSTG Total Power Dissipation at TA=25C Storage Temperature Range -65 TJ Maximum Junction Temperature TL Lead Temperature (Soldering, 10 Seconds) JA Thermal Resistance, Junction-to-Ambient (2) +260 2 (1-in. Pad of 2-oz. Copper) IEC 61000-4-2 System Level ESD ESD Electrostatic Discharge Capability Air Discharge 15 Contact Discharge 8 Human Body Model, ANSI/ESDA/JEDEC JS- All Pins 001-2012 2 Charged Device Model, JESD22-C101 1 IEC 61000-4-5, Surge Protection Surge 81 All Pins VBUS 100 VIF 40 (2) C C/W FPF2487 -- Dual Channel Over-Voltage Protection Load Switch Absolute Maximum Ratings kV V Notes: 1. Pulsed, 50 ms maximum non-repetitive. 2. Measured using 2S2P JEDEC std. PCB. Recommended Operating Conditions The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not recommend exceeding them or designing to Absolute Maximum Ratings. Symbol VBUS VIF Parameter Min. Max. Unit Supply Voltage, VBUS 2.5 23.0 V 5.5 Supply Voltage, VIF 3.1 CIN / COUT Input and Output Capacitance 0.1 F CVBUS_DET Output Capacitance 0.47 F TA Operating Temperature (c) 2014 Fairchild Semiconductor Corporation FPF2487 * Rev. 1.4 -40 +85 V C www.fairchildsemi.com 4 Unless otherwise noted, VBUS=2.5 to 23 V, VIF=3.1 to 5.5 V, TA=-40 to 85C; Typical values are at VBUS=5 V, IIN 2 A, VIF=4 V, CIN=0.1 F and TA=25C. Symbol Parameter Conditions Min. Typ. Max. Unit Basic Operation IQ IIN_Q VBUS=5 V, ONB=0 V, VBUS_DET=Floating 160 250 A VIF=4 V 100 150 A VBUS=12 V, VOUT=0 V, VBUS_DET=Floating 150 205 A VIF=5.5 V, BAT=0 V 100 180 A Input Quiescent Current OVLO Supply Current TSDN Thermal Shutdown TSDN_HYS Thermal Shutdown (3) Hysteresis (3) 140 C 20 C 35 V VBUS to VOUT Switch VBUS_CLAMP Input Clamping Voltage VBUS_OVLO RON_VBUS tDEB_VBUS IIN=10 mA VBUS Rising, TA=-40 to 85C 5.90 VBUS Falling, TA=-40 to 85C 5.8 5.95 6.00 V Over-Voltage Trip Level V VBUS=5 V, IOUT=1 A, TA=25C 33 39 m VBUS=9 V, IOUT=1 A, TA=25C 33 39 m Time from VBUS_MIN < VBUS < VBUS_OVLO to VOUT=0.1 x VBUS 15 ms Time from VBUS=VBUS_MIN to 0.1 x VBUS_DET 30 ms 3 ms On-Resistance Debounce Time tSTART_VBUS Soft-Start Time tON_VBUS Switch Turn-On Time RL=100 , CL=22 F, VOUT from 0.1 x VBUS to 0.9 x VBUS tOFF_VBUS Switch Turn-Off Time RL=100 , No CL, VBUS > VBUS_OVLO to VOUT=0.8 x VBUS 150 FPF2487 -- Dual Channel Over-Voltage Protection Load Switch Electrical Characteristics ns VIF to BAT Switch VIF_CLAMP Input Clamping Voltage IIN=10 mA 6.4 VIF Rising, TA=-40 to 85C 2.85 VIF Falling, TA=-40 to 85C 2.7 VIF_UVLO Under-Voltage Trip Level VIF_OVLO Over-Voltage Trip Level RON_VIF On-Resistance VIF=3.1 V, IOUT=1 A, TA=25C 10 15 m IRCB Reverse Current VIF=0 V, BAT=4.4 V 3 7 A tDEB_VIF Debounce Time Time from VIF_UVLO < VIF < VIF_OVLO to BAT=0.1 x VIF 15 ms tQUAL_VIF Qualification Tim BAT > VIH_BAT First, Time from ON > VIH_ON(B) to BAT Voltage Increase 2 ms tON_VIF Switch Turn-On Time RL=100 , CL=22 F, VOUT from 0.1 x VIF to 0.9 x VIF 2 ms tOFF_VIF Switch Turn-Off Time RL=100 , No CL,VIN > VOVLO to VOUT=0.8 x VIF VIF Rising, TA=-40 to 85C 5.00 VIF Falling, TA=-40 to 85C 4.8 5.25 V 3.05 V V 5.50 V V 150 ns Note: 3. Guaranteed by characterization and design. Continued on the following page... (c) 2014 Fairchild Semiconductor Corporation FPF2487 * Rev. 1.4 www.fairchildsemi.com 5 Unless otherwise noted, VBUS=2.5 to 23 V, VIF=3.1 to 5.5 V, TA=-40 to 85C; Typical values are at VBUS=5 V, IIN 2 A, VIF=4 V, CIN=0.1 F and TA=25C. Symbol Parameter Conditions Min. VBUS=6.5 V, IBUS_DET=0 mA, TA=25C 6.0 VBUS=15 V, IBUS_DET=0 mA, TA=25C 6.0 VBUS=6.5 V, IBUS_DET=1 mA, TA=25C Typ. Max. Unit VBUS_DET VBUS_DET VBUS_DET Output Voltage 6.5 V 7.0 7.9 V 6.0 6.3 6.5 V VBUS=15 V, IBUS_DET=1 mA, TA=25C 6.0 7.0 7.9 V 1.2 Digital Signals VIH_ON(B) Enable HIGH Voltage VBUS, VIF Operating Range VIL_ON(B) Enable LOW Voltage VBUS, VIF Operating Range VIH_BAT BAT Presence HIGH Voltage BAT Rising VIL_BAT BAT Presence LOW Voltage BAT Falling V 0.5 2.5 V V 1.7 V IVBUS_DET_LEAK VBUS_DET Leakage Current VVBUS_DET=5 V, VBUS=0 V 1 A ON(B)_Leak ON(B) Leakage Current VBUS=5 V, VOUT=Float 1 A (c) 2014 Fairchild Semiconductor Corporation FPF2487 * Rev. 1.4 FPF2487 -- Dual Channel Over-Voltage Protection Load Switch Electrical Characteristics (Continued) www.fairchildsemi.com 6 VBUS tDEB_VBUS tOFF_VBUS Measure @ 80% ONB to VOUT = 0.8*VBUS VOUT tON_VBUS Measure @ 10/90% ONB tSTART_VBUS Measure VBUS > VBUS_MIN to 0.1*VBUS_DET VBUS_DET Figure 5. VOVLO Timing for VBUS Power Up/Down and Normal Operation tSTART_VBUS tSTART_VBUS VBUS tOFF_VBUS Measure @ OVLO_Rising to VOUT = 0.8*VIN VOUT FPF2487 -- Dual Channel Over-Voltage Protection Load Switch Timing Diagrams VBUS_DET Figure 6. Timing for VBUS OVLO Operation (ONB=LOW) VBUS > OVLO OVLO VBUS < OVLO VBUS VBUS_Min tSTART_VBUS Measure VBUS_Min to 0.1*VBUS_DET VBUS_DET Figure 7. (c) 2014 Fairchild Semiconductor Corporation FPF2487 * Rev. 1.4 Always ON VBUS_DET Operation (ONB=HIGH) www.fairchildsemi.com 7 VIF tDEB_VIF tOFF_VIF Measure @ UVLO_Falling to VOUT = 0.8*VIF BAT tON_VIF Measure @ 10/90% Figure 8. Timing for VIF Power Up/Down and Normal Operation (ON=Don't Care) VIF (>BAT) BAT (> VIH_BAT) tDEB_VIF ON Figure 9. FPF2487 -- Dual Channel Over-Voltage Protection Load Switch Timing Diagrams (Continued) Timing for VIF Power Up/Down and Normal Operation with ON Pin VOVLO VIF tOFF_VIF Measure @ OVLO_Rising BAT = 0.8*VIF tDEB_VIF BAT Figure 10. (c) 2014 Fairchild Semiconductor Corporation FPF2487 * Rev. 1.4 Timing for VIF OVLO Operation (ON=Don't Care) www.fairchildsemi.com 8 FPF2487 -- Dual Channel Over-Voltage Protection Load Switch VIF Turn-On Qualification State Diagram Figure 11. VIF Turn-On Qualification State Diagram Notes: 4. Case #1 is reflecting removable battery system without ON signal. 5. Case #2 is reflecting embedded battery system with ON signal. Product-Specific Package Dimensions D E X Y 2200 m 30 m 1600 m 30 m 400 m 18 m 300 m 18 m (c) 2014 Fairchild Semiconductor Corporation FPF2487 * Rev. 1.4 www.fairchildsemi.com 9 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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