2SK3610-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-repetitive Avalanche current Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Symbol V DS VDSX *5 ID ID(puls] VGS IAS *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25C Tc=25C Tch Tstg Ratings 250 220 14 56 30 14 129.1 20 5 2.02 105 +150 -55 to +150 Unit V V A A V A mJ kV/s kV/s W Equivalent circuit schematic Drain(D) Gate(G) Source(S) C C *1 L=1.11mH, Vcc=48V,Tch=25C,See to Avalanche Energy Graph *2 Tch < = 150C *3 IF< = BVDSS, Tch < = 150C *4 V DS < = -ID, -di/dt=50A/s, Vcc < = 250V *5 VGS=-30V Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Symbol V(BR)DSS VGS(th) Zero gate voltage drain current IDSS Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Min. Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS VDS=250V VGS=0V VDS=200V VGS=0V VGS=30V VDS=0V ID=5A VGS=10V Typ. 250 3.0 Tch=25C Tch=125C ID=5A VDS=25V VDS =75V VGS=0V f=1MHz VCC=48V ID=5A VGS=10V 5 RGS=10 VCC =125V ID=10A VGS=10V L=1.11mH Tch=25C IF=10A VGS=0V Tch=25C IF=10A VGS=0V -di/dt=100A/s Tch=25C 10 200 10 785 88 4 12 2.7 22 7.4 21 8 5 Max. 5.0 25 250 100 260 1178 132 6 18 4.1 33 11.1 31.5 12 7.5 14 1.10 0.155 1.05 1.65 Units V V A nA m S pF ns nC A V s C Thermalcharacteristics Item Thermal resistance www.fujielectric.co.jp/denshi/scd Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient http://store.iiic.cc/ Min. Typ. Max. 1.191 62.0 Units C/W C/W 1 2SK3610-01 FUJI POWER MOSFET Characteristics 150 Allowable Power Dissipation PD=f(Tc) 350 Maximum Avalanche Energy vs. starting Tch EAS=f(starting Tch):Vcc=48V IAS=6A 300 125 250 100 EAS [mJ] PD [W] IAS=9A 75 200 150 IAS=14A 50 100 25 50 0 0 0 25 50 75 100 125 0 150 25 50 75 100 125 150 starting Tch [C] Tc [C] Typical Output Characteristics Typical Transfer Characteristic ID=f(VDS):80s Pulse test,Tch=25C ID=f(VGS):80s Pulse test, VDS=25V,Tch=25C 30 100 20V 25 10V 8V 7.5V 7.0V 10 ID[A] ID [A] 20 6.5V 15 10 1 6.0V 5 VGS=5.5V 0.1 0 0 2 4 6 8 10 0 12 1 2 3 4 VDS [V] 5 6 7 8 9 10 VGS[V] Typical Drain-Source on-state Resistance Typical Transconductance gfs=f(ID):80s Pulse test, VDS=25V,Tch=25C 0.6 100 RDS(on)=f(ID):80s Pulse test, Tch=25C VGS= 5.5V 6.0V 6.5V 0.5 7.0V gfs [S] RDS(on) [ ] 10 7.5V 8V 10V 0.4 20V 0.3 0.2 1 0.1 0.1 0.1 0.0 1 10 100 ID [A] 0 5 10 15 20 25 30 ID [A] http://store.iiic.cc/ 2 2SK3610-01 FUJI POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250 A Drain-Source On-state Resistance RDS(on)=f(Tch):ID=5A,VGS=10V 7.0 800 6.5 700 6.0 5.5 max. 5.0 VGS(th) [V] RDS(on) [ m ] 600 500 400 max. 4.5 4.0 3.5 3.0 300 min. 2.5 2.0 typ. 200 1.5 1.0 100 0.5 0 0.0 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 Tch [C] 50 75 100 125 150 Tch [C] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Typical Gate Charge Characteristics VGS=f(Qg):ID=10A, Tch=25C 14 10 0 Ciss 12 10 -1 C [nF] VGS [V] 10 8 Vcc= 125V Coss 6 10 4 -2 2 Crss 0 0 10 20 30 10 40 -3 10 -1 10 0 10 Qg [nC] 1 10 2 VDS [V] Typical Forward Characteristics of Reverse Diode Typical Switching Characteristics vs. ID IF=f(VSD):80s Pulse test,Tch=25C 3 100 10 10 10 t=f(ID):Vcc=48V, VGS=10V, RG=10 tf t [ns] IF [A] 2 td(off) td(on) 1 1 10 tr 0.1 0.00 0 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 10 -1 10 VSD [V] 10 0 10 1 2 10 ID [A] http://store.iiic.cc/ 3 Avalanche Current IAV [A] 2SK3610-01 10 2 10 1 10 0 FUJI POWER MOSFET Maximum Avalanche Current vs. Pulse width IAV=f(tAV):starting Tch=25C,Vcc=48V -1 10 -2 10 -8 10 10 -7 -6 10 10 -5 -4 10 -3 10 10 -2 Zth(ch-c) [C/W] t [s] 10 1 10 0 10 -1 10 -2 10 -3 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] http://www.fujielectric.co.jp/denshi/scd/ http://store.iiic.cc/ 4