TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com HIGH RELIABILITY SILICON POWER RECTIFIER Qualified per MIL-PRF-19500/297 * Glass Passivated Die * 500 Amps Surge Rating * Glass to Metal Seal Construction * VRRM to 1000 Volts DEVICES LEVELS 1N1184 1N1186 1N1188 1N1190 1N3766 1N3768 1N1184R 1N1186R 1N1188R 1N1190R 1N3766R 1N3768R JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Peak Reverse Voltage 1N1184 1N1186 1N1188 1N1190 1N3766 1N3768 Symbol 1N1184R 1N1186R 1N1188R 1N1190R 1N3766R 1N3768R Average Forward Current, TC = 150 Peak Surge Forward Current @ tp = 8.3ms, half sinewave, TC = 150C Thermal Resistance, Junction to Case Operating Case Temperature Range Storage Temperature Range Value Unit IF 100 200 400 600 800 1000 35 A IFSM 500 A RJC 0.8 C/W Tj -65C to 175C C TSTG -65C to 175C C VR V DO-203AB (DO-5) ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Max. Unit Forward Voltage IFM = 110A, TC = 25C* VFM 1.4 V Forward Voltage IFM = 500A, TC = 150C* VFM 2.3 V Reverse Current VRM = 100, Tj = 25C VRM = 200, Tj = 25C VRM = 400, Tj = 25C VRM = 600, Tj = 25C VRM = 800, Tj = 25C VRM = 1000, Tj = 25C Reverse Current VRM = 100, Tj = 150C VRM = 200, Tj = 150C VRM = 400, Tj = 150C VRM = 600, Tj = 150C VRM = 800, Tj = 150C VRM = 1000, Tj = 150C 1N1184 1N1186 1N1188 1N1190 1N3766 1N3768 1N1184R 1N1186R 1N1188R 1N1190R 1N3766R 1N3768R IRM 10 A 1N1184 1N1186 1N1188 1N1190 1N3766 1N3768 1N1184R 1N1186R 1N1188R 1N1190R 1N3766R 1N3768R IRM 1 mA * Pulse test: Pulse width 300 sec, Duty cycle 2% Note: T4-LDS-0138 Rev. 1 (091729) Page 1 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com HIGH RELIABILITY SILICON POWER RECTIFIER GRAPHS FIGURE 1 FIGURE 3 TYPICAL FORWARD CHARACTERISTICS FORWARD CURRENT DERATING FIGURE 4 TRANSIENT THERMAL IMPEDANCE FIGURE 2 TYPICAL REVERSE CHARACTERISTICS T4-LDS-0138 Rev. 1 (091729) Page 2 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com HIGH RELIABILITY SILICON POWER RECTIFIER PACKAGE DIMENSIONS NOTES: 1 2 3 4 5 6 7 8 9 Ltr Dimensions are in inches. Millimeters are given for general information only. Units must not be damaged by torque of 30 inch-pounds applied to .250-28 UNF-28 nut assembled on thread. Diameter of unthreaded portion .249 inch (6.32 mm) max and .220 inch (5.59 mm) min. Complete threads to extend to within 2.5 threads of seating plane. Angular orientation of this terminal is undefined. Max pitch diameter of plated threads shall be basic pitch diameter .2268 inch (5.76 mm) reference FEDSTD-H28. A chamfer or undercut on one or both ends of the hex portion is optional; minimum base diameter at seating plane. .600 inch (15.24 mm). In accordance with ASME Y14.5M, diameters are equivalent to x symbology. OAH CH HT SL HT1 B CD HF J T C M Dimensions Inches Millimeters Min Max Min Max 1.000 25.40 .450 11.43 .115 .200 2.93 5.08 .422 .453 10.72 11.50 .060 1.53 .250 .375 6.35 9.52 .667 16.94 .667 .687 16.95 17.44 .156 3.97 .140 .175 3.56 04.44 .080 2.03 .030 0.77 Physical dimensions, (all device types) DO-5 T4-LDS-0138 Rev. 1 (091729) Page 3 of 3