APT60DS10HJ
APT60DS10HJ – Rev 0 November, 2009
www.microsemi.com 1-3
Absolute maximum ratings
Symbol Parameter Max ratings Unit
VR Maximum DC reverse Voltage
VRRM Maximum Peak Repetitive Rev e rse Voltage 100 V
IFAV Rectangular, d=0.5 TC = 80°C 60
IFSM Non-Repetitive Forward Surge Current t=10ms TJ = 45°C 700 A
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
VRRM = 100V
IF = 60A @ Tc = 80°C
Application
• Switch mode power supplies rectifier
• Induction heating
• Welding equipment
Features
• Ultra fast recovery times
• Soft recovery characteristics
• High current
• Very low stray inductance
• High level of integration
• ISOTOP® Package (SOT-227)
Benefits
• Outstanding performance at high frequency operation
• Low losses
• Low noise switchi n g
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• RoHS Compliant
ISOTOP® Schottky Diode
Full Bridge Power Module
~
~
-
+
APT60DS10HJ
APT60DS10HJ – Rev 0 November, 2009
www.microsemi.com 2-3
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Tj = 25°C 2
IR Reverse Current VR = 100V Tj = 125°C 20
mA
Tj = 25°C 0.91
VF Forward Voltage IF = 60A Tj = 125°C 0.74 V
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
RthJC Junction to Case Thermal resistance 0.8
RthJA Junction to Ambient 20 °C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V
TJ,TSTG Storage Temperature Range -55 150
TL Max Lead Temp for Soldering:0.063” from case for 10 sec 300 °C
Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) 1.5 N.m
Wt Package Weight 29.2 g
SOT-227 (ISOTOP®) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (. 030)
0.85 (. 033) 12.6 (. 496)
12.8 (. 504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
r = 4.0 (.157)
(2 places) 4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
3.30 (. 130)
4.57 (. 180)
APT60DS10HJ
APT60DS10HJ – Rev 0 November, 2009
www.microsemi.com 3-3
Typical Performance Curve
maximum E ffective Transient Thermal I mpedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.2
0.4
0.6
0.8
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Rectangular Pulse Duration in Seconds
Thermal Impedance (°C/W)
Forward Characteristic
T
J
=25°C
T
J
=125°C
0
20
40
60
80
100
120
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V
F
(V)
I
F
(A)
ISOTOP® is a registered trademark of ST Microelectronics NV
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsem i's products are covered by one or more of U .S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939, 743 7,352, 045 5,283,2 01 5,801,4 17 5,648,2 83 7,196,63 4 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
