March 1996 NDC7001C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. These devices is particularly suited for low voltage, low current, switching, and power supply applications. N-Channel 0.51A, 50V, RDS(ON) = 2 @ VGS=10V P-Channel -0.34A, -50V. RDS(ON)= 5 @ VGS=-10V. High density cell design for low RDS(ON). Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities. High saturation current. ____________________________________________________________________________________________ 4 3 5 2 6 1 SuperSOTTM-6 Absolute Maximum Ratings T A = 25C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage - Continuous ID Drain Current - Continuous (Note 1a) - Pulsed PD Maximum Power Dissipation P-Channel Units 50 -50 V 20 -20 V 0.51 -0.34 A 1.5 -1 (Note 1a) 0.96 (Note 1b) 0.9 (Note 1c) TJ,TSTG N-Channel Operating and Storage Temperature Range W 0.7 -55 to 150 C (Note 1a) 130 C/W (Note 1) 60 C/W THERMAL CHARACTERISTICS RJA Thermal Resistance, Junction-to-Ambient RJC Thermal Resistance, Junction-to-Case (c) 1997 Fairchild Semiconductor Corporation NDC7001C.SAM ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Parameter Conditions Type Min VGS = 0 V, ID = 250 A N-Ch 50 VGS = 0 V, ID = -250 A P-Ch -50 Typ Max Units OFF CHARACTERISTICS BVDSS IDSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VDS = 40 V, VGS = 0 V V N-Ch 1 TJ = 125C P-Ch VDS = -40 V, VGS = 0 V A 500 -1 -500 TJ = 125C IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V All 100 nA IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS= 0 V All -100 nA VDS = VGS, ID = 250 A N-Ch 2.5 V ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage TJ = 125C VDS = VGS, ID = -250 .A P-Ch TJ = 125C RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 0.51 A 1 0.8 1.5 2.2 -1 -2.5 -3.5 -0.8 -2.2 -3 1 2 1.7 3.5 1.6 4 N-Ch TJ = 125C VGS = 4.5 V, ID = 0.35 A VGS = -10 V, ID = -0.34 A P-Ch TJ = 125C VGS = -4.5 V, ID = -0.25 A ID(on) On-State Drain Current gFS Forward Transconductance 1.9 2.5 5 4 10 5.3 7.5 N-Ch 1.5 VGS = -10 V, VDS = -10 V P-Ch -1 VDS = 10 V, ID = 0.51 A N-Ch 400 VDS = -10 V, ID = -0.34 A P-Ch 250 N-Channel VDS = 25 V, VGS = 0 V, f = 1.0 MHz N-Ch 20 VGS = 10 V, VDS = 10 V A mS DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance P-Channel VDS = -25 V, VGS = 0 V, f = 1.0 MHz P-Ch 40 N-Ch 13 P-Ch 13 N-Ch 5 P-Ch 4 pF pF pF NDC7001C.SAM Electrical Characteristics (TA = 25oC unless otherwise noted) Symbol Parameters Conditions Type N-Channel VDD = 25 V, ID = 0.25 A, VGS = 10 V, RGEN = 25 Min Typ Max Units N-Ch 6 20 nS P-Ch 14 20 N-Ch 6 20 SWITCHING CHARACTERISTICS (Note 2) tD(on) Turn - On Delay Time tr Turn - On Rise Time tD(off) Turn - Off Delay Time tf Turn - Off Fall Time Qg P-Channel VDD = -25 V, ID = -0.25 A, VGS = -10 V, RGEN = 25 Total Gate Charge Qgs Qgd Gate-Source Charge Gate-Drain Charge P-Ch 6 20 N-Ch 11 20 P-Ch 13 20 N-Ch 5 20 P-Ch 6 20 N-Channel VDS = 25 V, ID = 0.51 A, VGS = 10 V N-Ch 1 P-Ch 1.3 N-Ch 0.19 P-Channel VDS = -25 V, ID = -0.34 A, VGS = -10 V P-Ch 0.23 N-Ch 0.33 P-Ch 0.38 nC nC nC DRAIN-SOURCE DIODE CHARACTERISTICS IS Maximum Continuous Source Current ISM Maximum Pulse Source Current (Note 2) VSD Drain-Source Diode Forward Voltage N-Ch 0.51 P-Ch -0.34 N-Ch 1.5 P-Ch -1 VGS = 0 V, IS = 0.51 A (Note 2) N-Ch 0.8 1.2 VGS = 0 V, IS = -0.34 A (Note 2) P-Ch -0.8 -1.2 A A V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. PD (t ) = T J -TA R JA(t ) = T J-TA R JC+RCA(t ) = I 2D (t ) x RDS (ON ) TJ Typical RJA for single device operation using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment: a. 130oC/W when mounted on a 0.125 in2 pad of 2oz cpper. b. 140oC/W when mounted on a 0.005 in2 pad of 2oz cpper. c. 180oC/W when mounted on a 0.0015 in2 pad of 2oz cpper. 1a 1b 1c Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%. NDC7001C.SAM Typical Electrical Characteristics: N-Channel 1.5 3 8.0 7.0 VGS = 3.5V 6.0 1.2 RDS(on) , NORMALIZED 5.5 5.0 0.9 4.5 0.6 4.0 3.5 0.3 DRAIN-SOURCE ON-RESISTANCE I D , DRAIN-SOURCE CURRENT (A) V GS =10V 3.0 5.0 6.0 1.5 2 3 4 , DRAIN-SOURCE VOLTAGE (V) 8.0 10 1 0.3 0.6 0.9 I D , DRAIN CURRENT (A) 5 1.2 1.5 Figure 2. N-Channel On-Resistance Variation with Gate Voltage and Drain Current. 2 2.5 V GS = 10V R DS(on), NORMALIZED DRAIN-SOURCE ON-RESISTANCE I D = 0.51A 1.8 R DS(ON), NORMALIZED 7.0 0 1 VDS DRAIN-SOURCE ON-RESISTANCE 5.5 0.5 Figure 1. N-Channel On-Region Characteristics. V GS = 10V 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 2 TJ = 125C 1.5 25C 1 -55C 0.5 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (C) 125 0 150 0.3 I Figure 3. N-Channel On-Resistance Variation with Temperature. D 0.6 0.9 , DRAIN CURRENT (A) 1.2 1.5 Figure 4. N-Channel On-Resistance Variation with Drain Current and Temperature. 1.2 V DS = 10V T J = -55C 25C 125C V th, NORMALIZED 1.2 0.9 0.6 0.3 0 1 2 3 4 5 6 V GS , GATE TO SOURCE VOLTAGE (V) 7 Figure 5. N-Channel Transfer Characteristics. 8 GATE-SOURCE THRESHOLD VOLTAGE 1.5 I D , DRAIN CURRENT (A) 4.5 2 0 0 4.0 2.5 V DS = V GS I D = 250A 1.1 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (C) 125 150 Figure 6. N-Channel Gate Threshold Variation with Temperature. NDC7001C.SAM 1.16 I D 1.5 1 = 250A 1.12 I S , REVERSE DRAIN CURRENT (A) 1.08 1.04 1 0.96 0.92 0.88 -50 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (C) 125 TJ = 125C -55C 0.01 0.4 0.6 0.8 1 V SD , BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 8. N-Channel Body Diode Forward Voltage Variation with Current and Temperature. 10 100 VDS = 25V V GS , GATE-SOURCE VOLTAGE (V) 50 CAPACITANCE (pF) 25C 0.1 0.001 0.2 150 V GS = 0V 0.5 Figure 7. N-Channel Breakdown Voltage Variation with Temperature. C iss 20 C oss 10 C rss 5 f = 1 MHz 2 V GS = 0 V 1 0.1 8 I D = 0.51A 6 4 2 0 0.2 0.5 1 2 5 10 20 50 V DS , DRAIN TO SOURCE VOLTAGE (V) Figure 9. N-Channel Capacitance Characteristics. 0 0.2 0.4 0.6 0.8 Q g , GATE CHARGE (nC) 1 1.2 Figure 10. N-Channel Gate Charge Characteristics. 0.7 V DS = 10V T 0.6 I D , DRAIN CURRENT (A) BV DSS , NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE Typical Electrical Characteristics: N-Channel (continued) 0.5 J = -55C 25C 0.4 125C 0.3 0.2 0.1 0 0 0.3 V GS 0.6 0.9 1.2 , GATE TO SOURCE VOLTAGE (V) 1.5 Figure 11. N-Channel Transconductance Variation with Drain Current and Temperature. NDC7001C.SAM Typical Electrical Characteristics: P-Channel (continued) -1 3 -9.0 -8.0 -7.0 -0.8 R DS(ON) , NORMALIZED -6.0 -0.6 -5.0 -0.4 -0.2 -4.0 DRAIN-SOURCE ON-RESISTANCE I D , DRAIN-SOURCE CURRENT (A) V GS = -10V VGS =-4.5V 2.5 -5.0 2 -6.0 -7.0 1.5 -8.0 -9.0 -10 1 -3.5 0.5 -0.2 0 -1 VDS -6 I -0.4 -0.6 , DRAIN CURRENT (A) -0.8 -1 1.8 2.5 , NORMALIZED 1.4 1.2 DS(on) 1 0.8 0.6 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (C) 125 DRAIN-SOURCE ON-RESISTANCE V GS =-10 V I D = -0.34A VG S = -10V 0.4 -50 2 T J = 125C 1.5 25C 1 -55C 0.5 150 -0.2 Figure 14. P-Channel On-Resistance Variation with Temperature. -0.4 -0.6 I D , DRAIN CURRENT (A) -0.8 -1 Figure 15. P-Channel On-Resistance Variation with Drain Current and Temperature. 1.1 V DS =- 10V T = -55C J 25C 125C V th, NORMALIZED -0.8 -0.6 -0.4 -0.2 -1 -2 -3 V GS -4 -5 -6 -7 , GATE TO SOURCE VOLTAGE (V) Figure 16. P-Channel Transfer Characteristics. -8 GATE-SOURCE THRESHOLD VOLTAGE -1 ID , DRAIN CURRENT (A) D Figure 13. P-Channel On-Resistance Variation with Gate Voltage and Drain Current. R R DS(ON) , NORMALIZED -5 Figure 12. P-Channel On-Region Characteristics. 1.6 DRAIN-SOURCE ON-RESISTANCE -2 -3 -4 , DRAIN-SOURCE VOLTAGE (V) VDS = V GS 1.05 I D = -250A 1 0.95 0.9 0.85 0.8 -50 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (C) 125 150 Figure 17. P-Channel Gate Threshold Variation with Temperature. NDC7001C.SAM Typical Electrical Characteristics: P-Channel (continued) 1 0.5 -I S, REVERSE DRAIN CURRENT (A) DRAIN-SOURCE BREAKDOWN VOLTAGE I D = 250A 1.1 1.05 1 0.95 0.9 -50 -25 0 T J 25 50 75 100 , JUNCTION TEMPERATURE (C) 125 0.1 VGS =0V TJ = 125C 25C -55C 0.05 0.01 0.005 0.001 0.2 150 Figure 18. P-Channel Breakdown Voltage Variation with Temperature. 0.4 0.6 0.8 1 1.2 1.4 1.6 -V SD , BODY DIODE FORWARD VOLTAGE (V) 1.8 Figure 19. P-Channel Body Diode Forward Voltage Variation with Current and Temperature. -10 100 I D = -0.34A CAPACITANCE (pF) , GATE-SOURCE VOLTAGE (V) Ciss 50 Coss 20 10 Crss 5 f = 1 MHz -24 -48 -6 -4 -2 GS V GS = 0 V V DS = -12V V 2 -8 1 0.1 0 0.2 0.5 -V DS 1 2 5 10 20 50 , DRAIN TO SOURCE VOLTAGE (V) Figure 20. P-Channel Capacitance Characteristics. 0 0.2 0.4 0.6 0.8 1 Q g , GATE CHARGE (nC) 1.2 1.4 1.6 Figure 21. P-Channel Gate Charge Characteristics. 0.5 TJ = -55C 25C 0.3 125C 0.2 0.1 FS , TRANSCONDUCTANCE (SIEMENS) V DS =- 10V 0.4 g BV DSS , NORMALIZED 1.15 0 -0.2 -0.4 -0.6 -0.8 -1 I D , DRAIN CURRENT (A) Figure 22. P-Channel Transconductance Variation with Drain Current and Temperature. NDC7001C.SAM Typical Thermal Characteristics: N & P-Channel 0.55 I D , STEADY-STATE DRAIN CURRENT (A) STEADY-STATE POWER DISSIPATION (W) 1.2 1.1 1a 1 0.9 1b 0.8 1c 4.5"x5" FR-4 Board 0.7 o TA = 2 5 C Still Air 0.6 0 0.2 0.4 0.6 0.8 2oz COPPER MOUNTING PAD AREA (in 2 ) 1 1a 0.5 1b 0.45 1c 0.4 4.5"x5" FR-4 Board o TA = 2 5 C Still Air VG S = 1 0 V 0.35 0 Figure 23. SOT-6 Dual Package Maximum Steady-State Power Dissipation versus Copper Mounting Pad Area. 0.025 0.05 0.075 0.1 2 2oz COPPER MOUNTING PAD AREA (in ) Figure 24. N-Ch Maximum Steady-State Drain Current versus Copper Mounting Pad Area. 3 0.4 2 1 0.35 1a 1b 0.3 1c 0.25 I D , DRAIN CURRENT (A) -I D , STEADY-STATE DRAIN CURRENT (A) 0.125 RD LIM IT 10 0 1m us s 10 0.2 10 0.1 V 0.05 GS = 10V SINGLE PULSE 0m ms s 1s DC R J A = See Note 1c o TA = 2 5 C 0.02 T A = 25C Still Air VG S = - 1 0 V 0 N) 0.5 4.5"x5" FR-4 Board 0.2 S(O 0.01 0.025 0.05 0.075 0.1 2oz COPPER MOUNTING PAD AREA (in 2 ) 0.125 Figure 25. P-Ch Maximum Steady-State Drain Current versus Copper Mounting Pad Area. 1 2 5 10 20 V DS , DRAIN-SOURCE VOLTAGE (V) 50 70 Figure 26. N-Channel Maximum Safe Operating Area. 3 2 10 0u -I D, DRAIN CURRENT (A) 1 0.5 RD S(O N) LIM 1m IT 10 0.2 10 0.1 V GS = -10V 0.05 SINGLE PULSE 0m s s ms s 1s DC R J A = See Note 1c 0.02 T A = 25C 0.01 1 2 5 10 20 -V DS , DRAIN-SOURCE VOLTAGE (V) 50 70 Figure 27. P-Channel Maximum Safe Operating Area. NDC7001C.SAM Typical Thermal Characteristics: N & P-Channel r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 0 .5 D = 0.5 0 .2 0.2 0 .1 R JA (t) = r(t) * R JA R JA = See Note 1c 0.1 P(pk) 0.05 t1 0.05 0.02 0.01 0.02 = P * R JA (t) Duty Cycle, D = t 1 / t 2 A Single Pulse 0.01 0 .0 0 0 1 t2 TJ - T 0 .001 0 .0 1 0 .1 t 1, TIME (sec) 1 10 100 300 Figure 28. Transient Thermal Response Curve. Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change depending on the circuit board design. ton VDD t d(on) tf 90% 90% V OUT D VGS tr RL V IN to f f t d(off) VO U T 10% R GEN 10% DUT G 90% V IN S 50% 50% 10% PULSE WIDTH Figure 29. N or P-Channel Switching Test Circuit. Figure 30. N or P-Channel Switching Waveforms. NDC7001C.SAM TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ISOPLANARTM MICROWIRETM POPTM PowerTrench QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM SyncFETTM TinyLogicTM UHCTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. D