PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP115/116/117 HIGH DC CURRENT GAIN MIN hre=1000 @ Vce= -4V, Ic=-1A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE Complementary to TIP110/111/112 ABSOLUTE MAXIMUM RATINGS TO-220 Characteristic Symbol Rating Unit Collector Base Voltage :TIP115 Vso -60 Vv | -TIP116 -80 Vv 1.Base 2.Collector 3.Emitter > TIP117 -100 Vv Collector Emitter Voltage C TIP115 VoeEo -60 Vv TIP116 -80 Vv TIP117 -100 Vv Bo Emitter-Base Voltage VeBo -5 Vv t Collector Current (DC) le -2 A Collector Current (Pulse) le -4 A Base Current (DC) lp -50 mA R,S10K2 Collector Dissipation (Ta=25C) Po 2 WwW _ le. . Collector Dissipation (To=25C) Pe 50 Ww er ObKa Ry Ro. Junction Temperature Ty 150 C E Storage Temperature Tsta -65 ~ 150 C ELECTRICAL CHARACTERISTICS (1, =25c) Characteristic Symbol Test Conditions Min Max Unit Collector Emitter Sustainins Volttace | Voeo(Sus) Ilo =-30mA, Ip= 0 > TIP115 -60 V : TIP116 -80 V > TIP117 -400 V Collector Cutoff Current * TIP115 IcEo Voce = -30V, Ip= 90 -2 mA TIP116 Vor = -40V, Ip=0 2 mA :TIPI17 Vor = -50V, Ip=0 2 mA Collector Cutoff Current * TIP115 loso Vos = -60V, le=90 -1 mA :TIPI16 Vos = -80V, lp=0 1 mA TIP? Vos = -100V, le=0 1 mA Emitter Cutoff Current lEBo Vee=-5V, Io=0 -2 mA DC Current Gain Hee Voe= -4V lco=-1A 1000 Voe= -4V, Ic=-2A 500 Collector Emitter Saturation Voltage | Vce(sat) Ilo=-2A, Igp= -8MA -2.5 Vv Base Emitter On Voltage Vee(on) Voce = -4V, Ic =-2A -2.8 Vv Output Capacitance Cos Vop = -10V, le=0, f= 0.1MHz 200 pF Rev. B.1 ee FAIRCHILD SEMICONDUCTOR - 1999 Fairchild Semiconductor Corporation NPN EPITAXIAL TIP115/116/117 SILICON DARLINGTON TRANSISTOR STATIC CHARACTERISTIC DC CURRENT GAIN 10000 5000 e 2000 a & 2 1000 3 5 s @ 500 Ee c 5 4 3 200 So 9 a a = uw 100 = 50 20 10 -1 -2 -3 -4 - -0.01-0.02 -0.05-0.1 -0.2 -0.5 -1 -2 -& -tO Vee(V), COLLECTOR-EMITTER VOLTAGE Ig(A), COLLECTOR CURRENT COLLECTOR-EMITTER SATURATION VOLTAGE COLLECTOR OUTPUT CAPACITANCE BASE-EMITTER SATURATION VOLTAGE -100 1000 w -50 500 So =< 3 -20 200 = B -10 8 100 = = -5 5 50 e 2 3 3 s -2 x 20 = j = & g -1 a d 10 > e705 5 3 zy > -0.2 2 O.1 1 -0.01 -0.02 -0.05 -0.1-0.2 -O.5 -1 -2 -5 -10 -0.01 -0.02 -0.1-0.2-9.5 -1 -2 5 10 20 -50 -100 0.05 {c(A), GOLLEGTOR CURRENT Veat), COLLECTOR-BASE VOLTAGE POWER DERATING SAFE OPERATING AREA -10 -5 5 a & -2 z = wo oO 2 oa a e 1 - w 3 + 2 3 = Pos = = a = a = -0.2 Tip 14 TIP 14 roid TIP117 -0.1 25 50 75 100 125 150 175 200 -1 -2 5 -10 -20 -30 -100 Te{?C}. CASE TEMPERATURE Vce(V), COLLECTOR-EMITTER VOLTAGE SEMICONDUCTOR = TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx ISOPLANAR CoolFET MICROWIRE CROSSVOLT POP E?CMOS PowerTrench FACT qs FACT Quiet Series Quiet Series FAST SuperSOT-3 FASTr SuperSOT-6 GTo SuperSOT-8 HiSeC TinyLogic DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or This datasheet contains the design specifications for In Design product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.