DSEP2x60-12A
ns
HiPerFRED
Symbol Definition
R a t i n g s
Features / Advantages:
typ. max.
I
FSM
I
R
A
V
800
IA
V
F
2.42
R0.60 K/W
V
R
=
min.
60
t = 10 ms
Applications:
V
RRM
V1200
1T
VJ
V°C=
T
VJ
°C=mA4
Package:
Part number
V
R
=
T
VJ
=°C
I
F
=A
V
T
C
=80°C
d =
P
tot
200 WT
C
°C=
T
VJ
150 °C-40
V
I
RRM
=
=1200
60
60
T
VJ
=45°C
DSEP2x60-12A
V
A
1200
V1200
25
25
25
max. repe titiv e re verse vo l t a g e
reverse current
forward voltage
virt ua l j un ctio n temp e r ature
total power dissipation
max. forward surge current
Conditions Unit
2.84
T
VJ
°C=25
C
J
j
unction capacitance V = V; T
150
V
F0
V1.15T
VJ
=150°C
r
F
6.2
f = 1 MHz = °C25
mΩ
V1.52T
VJ
=°C
I
F
=A
V
60
1.92
I
F
=A120
I
F
=A120
2x
threshold voltage
slope resistance for power loss calculation only
Backside: isolated
8A
T
VJ
=°C
reverse recovery time
A60
60
220
ns
(50 Hz), sine
t
rr
=40 ns
● Housing:
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Anti-parallel legs
SOT-227B (minibloc)
●
rIndustry standard outline
●
rCu base plate internal DCB isolated
●
rIsolation Voltage 3000 V
●
rEpoxy meets UL 94V-0
●
rRoHS compliant
RVJ
I
RM
max. reverse recovery current
I
F
=A;60
25
T=125°C
VJ
-di
F
=A/µs600/dtt
rr
V
R
=V800
T
VJ
=°C25
T=125°C
VJ
mA
48600 pF
thermal resistance junction to case
thJC
rectangular 0.5
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
FAV
average forward current
FAV
150
IXYS reserves the right to change limits, conditions and dimensions.
©
20110531b
Data according to IEC 60747and per diode unless otherwise specified
2011 IXYS all rights reserved
DSEP2x60-12A
10.5 3.2
8.6 6.8
I
RMS
A
per terminal 100
R
thCH
K/W0.10
M
D
Nm1.5
mounting torque 1.1
T
stg
°C150
storage temperature -40
Weight g30
Symbol Definition Ratings
typ. max.min.Conditions
RMS current
thermal resistance case to heatsink
Unit
Ordering Delivering Mode Base Qty Code Key
Standard
Part Name
DSEP2x60-12A 495840Tube 10
abcde
YYWWZ XXXXXX
Product Marking
Logo Part No.
DateCode Assembly Code
Assembly Line
DSEP2x61-12A SOT-227B (minibloc)
Similar Part Package
Marking on Product
DSEP2x60-12A
1200
Voltage Class
M
T
Nm1.5
terminal torque 1.1
V
ISOL
V3000
t = 1 second
V2500
t = 1 minute
isolation voltage
d
Spp/App
mm
mm
creepage | striking distance on surface | through air terminal to terminal
d
Spb/Apb
creepage | striking distance on surface | through air terminal to backside
IXYS reserves the right to change limits, conditions and dimensions.
©
20110531b
Data according to IEC 60747and per diode unless otherwise specified
2011 IXYS all rights reserved
DSEP2x60-12A
Outlines SOT-227B (minibloc)
IXYS reserves the right to change limits, conditions and dimensions.
©
20110531b
Data according to IEC 60747and per diode unless otherwise specified
2011 IXYS all rights reserved
DSEP2x60-12A
200 600 10000 400 800
200
220
240
260
280
300
0.00001 0.0001 0.001 0.01 0.1 1 10
0.0001
0.001
0.01
0.1
1
0 40 80 120 160
0.0
0.5
1.0
1.5
2.0
0 200 400 600 800 1000
0
10
20
30
40
50
60
0.0
0.2
0.4
0.6
0.8
1.0
1.2
200 600 10000 400 800
0
20
40
60
80
100
120
0001001
0.0
2.5
5.0
7.5
10.0
12.5
15.0
01 2 3
0
20
40
60
80
100
V
FR
t
fr
I
RM
Q
r
I
F
[A]
V
F
[V]
Q
r
[nC]
-di
F
/dt [A/µs]
I
RM
[A]
-di
F
/dt [A/µs]
K
f
T
VJ
[°C]
t
rr
[ns]
-di
F
/dt [A/µs] -di
F
/dt [A/µs]
V
FR
[V]
t[s]
Z
thJC
[K/W]
Fig. 1 Forward current I
F
vs. V
F
Fig. 2 Reverse recovery charge
Q
r
versus -di
F
/dt
Fig. 3 Peak reverse current
I
RM
versus -di
F
/dt
Fig. 4 Dynamic parameters
Q
r
,I
RM
versus T
VJ
Fig. 5 Recovery time
t
rr
versus -di
F
/dt
Fig. 6 Peak forward voltage
V
FR
and tfr versus di
F
/dt
Fig. 7 Transient thermal resistance junction to case
T
VJ
= 150°C
100°C
25°C I
F
= 120 A
60 A
30 A
I
F
= 120 A
60 A
30 A
I
F
= 120 A
60 A
30 A
Constants for Z
thJC
calculation:
iR
thi
(K/W) t
i
(s)
1 0.212 0.0055
2 0.248 0.0092
3 0.063 0.0007
4 0.077 0.0391
T
VJ
= 125°C
V
R
=800V
T
VJ
= 125°C
V
R
= 800 V
T
VJ
= 125°C
I
F
= 60 A
T
VJ
= 125°C
V
R
= 800 V
IXYS reserves the right to change limits, conditions and dimensions.
©
20110531b
Data according to IEC 60747and per diode unless otherwise specified
2011 IXYS all rights reserved
