DISCRETE SEMICONDUCTORS DATA SHEET BYW29EX series Rectifier diodes ultrafast, rugged Product specification September 2018 WeEn Semiconductors Product specification Rectifier diodes ultrafast, rugged GENERAL DESCRIPTION BYW29EX series QUICK REFERENCE DATA Glass passivated epitaxial rectifier diodes in a full pack plastic envelope, featuring low forward voltage drop, ultra-fast recovery times, soft recovery characteristic and guaranteed reverse surge and ESD capability. They are intended for use in switched mode power supplies and high frequency circuits in general where low conduction and switching losses are essential. PINNING - SOD113 PIN SYMBOL PARAMETER BYW29EXRepetitive peak reverse voltage Forward voltage Forward current Reverse recovery time Repetitive peak reverse current VRRM VF IF(AV) trr IRRM PIN CONFIGURATION cathode 2 anode MAX. UNIT 150 150 200 200 V 0.895 8 25 0.2 0.895 8 25 0.2 V A ns A SYMBOL mb DESCRIPTION 1 MAX. K A 001aaa020 case isolated 1 2 TO-220F (SOD113) LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER VRRM VRWM VR Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage IF(AV) Average forward current1 IF(RMS) IFRM RMS forward current Repetitive peak forward current t = 25 s; = 0.5; Ths 106 C Non-repetitive peak forward t = 10 ms current t = 8.3 ms sinusoidal; with reapplied VRWM(max) I2t for fusing t = 10 ms Repetitive peak reverse current tp = 2 s; = 0.001 Non-repetitive peak reverse tp = 100 s current Storage temperature Operating junction temperature IFSM I2t IRRM IRSM Tstg Tj CONDITIONS MIN. - square wave; = 0.5; Ths 106 C sinusoidal; a = 1.57; Ths 109 C MAX. -150 150 150 150 UNIT -200 200 200 200 V V V - 8 A - 7.3 11.3 16 A A A - 80 88 A A - 32 0.2 0.2 A2s A A -40 - 150 150 C C 1 Neglecting switching and reverse current losses September 2018 1 Rev 1.300 WeEn Semiconductors Product specification Rectifier diodes ultrafast, rugged BYW29EX series ESD LIMITING VALUE SYMBOL PARAMETER CONDITIONS VC Electrostatic discharge capacitor voltage Human body model; C = 250 pF; R = 1.5 k MIN. MAX. UNIT - 8 kV ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 C unless otherwise specified SYMBOL PARAMETER CONDITIONS Visol R.M.S. isolation voltage from both terminals to external heatsink f = 50-60 Hz; sinusoidal waveform; R.H. 65% ; clean and dustfree Cisol Capacitance from both terminals f = 1 MHz to external heatsink MIN. TYP. - MAX. UNIT 2500 V - 10 - pF MIN. TYP. MAX. UNIT - 55 5.5 7.2 - K/W K/W K/W MIN. TYP. MAX. UNIT - 0.80 0.92 1.1 0.2 2 0.895 1.05 1.3 0.6 10 V V V mA A MIN. TYP. MAX. UNIT - 4 20 11 25 nC ns - 15 1 20 - ns V THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-hs Thermal resistance junction to heatsink Thermal resistance junction to ambient with heatsink compound without heatsink compound in free air Rth j-a STATIC CHARACTERISTICS Tj = 25 C unless otherwise stated SYMBOL PARAMETER CONDITIONS VF Forward voltage IR Reverse current IF = 8 A; Tj = 150C IF = 8 A IF = 20 A VR = VRWM; Tj = 100 C VR = VRWM DYNAMIC CHARACTERISTICS Tj = 25 C unless otherwise stated SYMBOL PARAMETER CONDITIONS Qs trr1 Reverse recovery charge Reverse recovery time trr2 Vfr Reverse recovery time Forward recovery voltage IF = 2 A; VR 30 V; -dIF/dt = 20 A/s IF = 1 A; VR 30 V; -dIF/dt = 100 A/s IF = 0.5 A to IR = 1 A; Irec = 0.25 A IF = 1 A; dIF/dt = 10 A/s September 2018 2 Rev 1.300 WeEn Semiconductors Product specification Rectifier diodes ultrafast, rugged I dI F BYW29EX series 0.5A F dt IF t 0A rr time Q I 10% s I rec = 0.25A IR 100% trr2 I R rrm I = 1A R Fig.1. Definition of trr1, Qs and Irrm I Fig.4. Definition of trr2 12 F Ths(max) / C BYW29 PF / W Vo = 0.791 V 84 D = 1.0 Rs = 0.013 ohms 95 10 0.5 8 time 106 0.2 6 117 0.1 VF 4 tp I V D= 139 2 fr t T VF 0 time Fig.2. Definition of Vfr 0 2 4 6 IF(AV) / A 8 8 PF / W Ths(max) / C BYW29 a = 1.57 Vo = 0.791 V Rs = 0.013 Ohms 7 122.5 4 4 to 'scope 117 2.8 5 Voltage Pulse Source 106 111.5 1.9 2.2 6 D.U.T. 128 3 133.5 2 139 1 144.5 0 0 1 2 3 4 IF(AV) / A 5 6 7 150 8 Fig.6. Maximum forward dissipation PF = f(IF(AV)); sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). Fig.3. Circuit schematic for trr2 September 2018 150 12 10 Fig.5. Maximum forward dissipation PF = f(IF(AV)); square current waveform where IF(AV) =IF(RMS) x D. R Current shunt 128 tp T 3 Rev 1.300 WeEn Semiconductors Product specification Rectifier diodes ultrafast, rugged BYW29EX series trr / ns 100 Qs / nC 1000 IF=10A 5A 2A 1A IF=10A 100 10 IF=1A 10 1 1.0 1 10 dIF/dt (A/us) 100 1.0 Fig.7. Maximum trr at Tj = 25 C. 100 Fig.10. Maximum Qs at Tj = 25 C. Irrm / A 10 10 -dIF/dt (A/us) 10 IF=10A Transient thermal impedance, Zth j-hs (K/W) 1 1 IF=1A 0.1 0.1 PD 0.01 0.001 1us 0.01 10 -dIF/dt (A/us) 1 100 Fig.8. Maximum Irrm at Tj = 25 C. 30 tp D= T 10us tp T t 100us 1ms 10ms 100ms 1s 10s pulse width, tp (s) BYW29F/EX Fig.11. Transient thermal impedance; Zth j-hs = f(tp). BYW29 IF / A Tj=150 C Tj=25 C 20 typ max 10 0 0 0.5 1 VF / V 1.5 2 Fig.9. Typical and maximum forward characteristic IF = f(VF); parameter Tj September 2018 4 Rev 1.300 WeEn Semiconductors Product specification Rectifier diodes ultrafast, rugged BYW29EX series MECHANICAL DATA Plastic single- ended package; isolated heatsink m ounted; 1 m ounting hole; 2- lead TO- 220 `full pack' SOD113 A A1 E z(2) P q m T(4) D HE L2 j(3) L1(1) k(3) Q L 1 b1 2 b w c e 0 5 10 mm scale Dimensions (mm are the original dimensions) Unit mm max nom min A A1 b b1 c 4.6 2.9 0.9 1.1 0.7 15.8 10.3 4.0 2.5 0.7 0.9 0.4 15.2 D E e 9.7 HE max 5.08 19.0 L2 L1(1) max j(3) k(3) L 2.7 0.6 14.4 3.3 1.7 0.4 13.5 2.8 0.5 m P Q 6.5 3.2 2.6 6.3 3.0 2.3 Notes 1. Terminals are uncontrolled within zone L1. 2. z is depth of T. 3. Dot lines area designs may vary. 4. Eject pin mark is for reference only. Outline version SOD113 September 2018 T(4) w z(2) 2.6 2.55 0.4 0.8 sod113_po References IEC q JEDEC European projection JEITA Issue date 07-06-08 15-08-28 2-lead TO-220F 5 Rev 1.300 WeEn Semiconductors Legal information Data sheet status Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. 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