UNISONIC TECHNOLOGIES CO., LTD
MCR100 SCR
www.unisonic.com.tw 3 of 6
Copyright © 2009 Unisonic Technologies Co., Ltd QW-R301-016.C
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL RATINGS UNIT
MCR100-4 200 V
MCR100-6 400 V
Peak Repetitive Off-State Voltage(Note 1)
(TJ=-40 ~ 110°С, Sine Wave, 50 ~ 60Hz;
Gate Open) MCR100-8
VDRM,VRRM
600 V
On-Sate RMS Current (Tc=80°С) 180°С Condition Angles IT(RMS) 0.8 A
Peak Non-Repetitive Surge Current
(1/2 cycle, Sine Wave, 60Hz, TJ=25°С) ITSM 10 A
Circuit Fusing Considerations (t=8.3 ms) I2t 0.415 A2s
Forward Peak Gate Power (TA=25°С, Pulse Width ≤1.0µs) PGM 0.1 W
Forward Average Gate Power (TA=25°С, t=8.3ms) PG(AV) 0.1 W
Peak Gate Current – Forward (TA=25°С, Pulse Width≤1.0μs) IGM 1 A
Peak Gate Voltage – Reverse (TA=25°С, Pulse Width≤1.0μs) VGRM 5 V
Operating Junction Temperature Range
(Rated VRRM and VDRM) TJ -40 ~ +110 °С
Storage Temperature Range TSTG -40 ~ +150 °С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER SYMBOL MAX UNIT
TO-92 200 °С/W
Junction to Ambient SOT-23/SOT-89 θJA 400 °С/W
ELECTRICAL CHARACTERISTICS (TJ=25°С, unless otherwise stated)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
TC=25°С 10 μAPeak Forward or Reverse Blocking
Current TC=125°СIDRM, IRRM
VD=Rated VDRM and VRRM;
RGK=1kΩ 100 μA
ON CHARACTERISTICS
Peak Forward On-State Voltage (Note 2) VTM I
TM=1A Peak @ TA=25°С 1.7 V
Gate Trigger Current (Continuous DC)(Note3) IGT V
AK=7Vdc, RL=100Ω, TC=25°С 40 200 μA
TC=25°С 0.5 5 mA
Holding Current (Note 4) TC=-40°СIH VAK=7Vdc, initiating
current=20mA 10 mA
TC=25°С 0.6 10 mA
Latch Current TC=-40°СIL V
AK=7V, Ig=200μA 15 mA
TC=25°С 0.62 0.8 V Gate Trigger Voltage (continuous
dc) (Note 3) TC=-40°СVGT V
AK=7Vdc, RL=100Ω 1.2 V
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off-State Voltage dV/dt
VD=Rated VDRM, Exponential
Waveform, RGK=1000Ω,
TJ=110°С
20 35 V/μs
Critical Rate of Rise of On-State Current di/dt IPK=20A; Pw=10μsec;
diG/dt=1A/μsec, Igt=20mA 50 A/μs
Notes: 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate
voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the
anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of
the devices are exceeded.
2. Indicates Pulse Test Width≤1.0ms, duty cycle ≤1%
3. RGK=1000Ω included in measurement.
4. Does not include RGK in measurement