Bridge Diode Dual In-Line Package OUTLINE S1NB Unit : mm Weight : 0.29g typ. Package1NSMD 800V 1A 6.8 Type No. * DIP Class Feature S1NB 6094 10 Date code * Small-DIP - 2.6 Package1 NTHD Unit : mm Weight : 0.29gtyp. 6.8 Type No. Class Date code S1NB 6099 - 6.5 2.5 4.4 Web For details of outline dimensions, refer to our web site or the Semiconductor Short Form Catalog. As for the marking, refer to the specification "Marking, Terminal Connection". RATINGS Absolute Maximum Ratings Tl = 25unless otherwise specified Item Storage Temperature Operation Junction Temperature Maximum Reverse Voltage Average Rectified Forward Current Peak Surge Forward Current Current Squared Time Symbol Conditions Type No. S1NB60 S1NB80 Unit Tstg -40150 Tj 150 600 VRM IO IFSM It 2 800 VRSM700 50Hz Ta = 25 50Hz sine wave, Resistance load, On glass-epoxy substrate, Ta=25 50Hz Tj = 25 50Hz sine wave, Non-repetitive 1cycle peak value, Tj = 25 1mst10msTj = 25 per diode V 1 A 30 A 4.5 A2s Electrical Characteristics Tl = 25unless otherwise specified Forward Voltage Reverse Current Thermal Resistance 18 J534-1 VF IR jl ja Pulse measurement, per diode VR = VRM, Pulse measurement, per diode IF = 0.5A, Junction to Lead Junction to Ambient MAX 1.05 MAX 10 MAX 15 MAX 68 V A /W Small DIP Bridge S1NB CHARACTERISTIC DIAGRAMS Sine wave 50Hz 50Hz sine wave is used for measurements. Typical Semiconductor products generally have characterristic variation. Typical is a statistical average of the device's ability. J534-1 19