H - 1
© 2000 IXYS All rights reserved
Breakover Diodes
Applications
lTransient voltage protection
lHigh-voltage switches
lCrowbar
lLasers
lPulse generators
i
V
VHVBO
IH
IBO
Application Note H - 6
Remark: For special selection of more than 2 pieces IXBOD 1-... for every
break down voltage of VBO > 2000 V please contact us.
H - 2 © 2000 IXYS All rights reserved
Symbol Conditions Ratings
IDTVJ = 125°C; V = 0,8x VBO 20 µA
VBO VBO(TVJ) = VBO, 25°C [1 +
K
T (TVJ - 25°C)]
IRMS f = 50 HZ; Tamb = 50°C1.4A
connection pins soldered to printed circuit
(conductor 0,035x2mm)
IAVM 0.9 A
ISM tp = 0.1 ms; Tamb = 50°C non repetitive 200 A
I²t tp = 0.1 ms; Tamb = 50°C2A
2s
Tamb -40...+125 °C
Tstg -40...+125 °C
TVJm 125 °C
KT Temperatur coefficient of VBO 2·10-3 K-1
KP coefficient for energy per pulse EP (material constant) 700 K/Ws
RthJA - natural convection 60 K/W
- with air speed 2 m/s 45 K/W
Weight 1g
Symbol Conditions Characteristic Values
IBO TVJ =25°C15mA
IHTVJ =25°C30mA
VHTVJ =25°C 4 - 8 V
(dv/dt)CTVJ =50°C; VD = 0.67·(VBO + 100V) > 1000 V/µs
(di/dt)CTVJ = 125°C; VD = VBO ; IT = 80A; f = 50 Hz 200 A/µs
tq(typ) TVJ = 125°CV
D = 0.67·VBO ; VR = 0V 150 µs
dV/dt(lin.) = 200V/µs; IT = 80A; di/dt = -10A/µs
VTTVJ =125°C; IT = 5A 1.7 V
V(TO) For power-loss calculations only 1.1 V
rTTVJ = 125°C 0.12 Ω
VBO Standard
V Types
600 ±50 IXBOD 1 -06
700 ±50 IXBOD 1 -07
800 ±50 IXBOD 1 -08
900 ±50 IXBOD 1 -09
1000 ±50 IXBOD 1 -10
VBO = 600-1000V
IAVM = 0.9 A
IXBOD 1 -06...10
Dimensions in mm (1 mm = 0.0394")
A
K
KA
Single Breakover Diode
030
IXYS reserve at these the right to change limits, test conditions and dimensions; Data according to IEC 60747
H - 3
© 2000 IXYS All rights reserved
IXBOD 1 -06...10
Fig. 4 Transient thermal resistance.Fig. 3 On-state voltage
Va = 0 m/s
Va = 2 m/s
Fig. 2 Energy per pulse for exponentially decaying
current pulse (see waveforms definition).
Fig. 1 Energy per pulse for trapezoidal current wafeforms
(see waveform definition).
t [s]
TVJ = 125°C
TVJ = 25°C
iT [A]
[V]
VT
[K/W]
ZthJA
H - 4 © 2000 IXYS All rights reserved
Symbol Test Conditions 2 BODs 3 BODs 4 BODs D-Version
IDTVJ = 125°C;V = 0,8x VBO 100 100 100 100 µA
VBO VBO(TVJ) = VBO, 25°C [1 +
K
T (TVJ - 25°C)]
IRMS f = 50 HZ; Tamb = 50°C 2.0 1.4 1.1 0.3 A
connection pins soldered to printed circuit
(conductor 0,035x2mm)
IAVM 1.25 0.9 0.7 0.2 A
ISM tp = 0.1 ms; Tamb = 50°C non repetitive 200 200 200 50 A
I²t tp = 0.1 ms; Tamb = 50°C 2 2 2 0.125 A2s
VTTVJ =125°C; IT = 5A 3.4 5.1 6.8 27 V
V(TO) For power-loss calculations only 2.2 3.3 4.4 17.5 V
rTTVJ =125°C 0.24 0.36 0.48 3 Ω
Tamb -40...+125 -40...+125 -40...+125 -40...+125 °C
Tstg -40...+125 -40...+125 -40...+125 -40...+125 °C
TVJm 125 125 125 125 °C
KT Temperatur coefficient of VBO 2·10-3 2·10-3 2·10-3 2·10-3 K-1
KP coefficient for energy per pulse EP (material constant) 700 700 700 700 K/Ws
RthJA - natural convection 20 20 20 20 K/W
- with air speed 2 m/s 16 16 16 16 K/W
Weight typical 14 14 14 14 g
Breakover Diode Modules
VBO Standard BOD -
V Types Elements
1200 ±50 IXBOD 1 -12R(D) 2
1300 ±50 IXBOD 1 -13R(D) 2
1400 ±50 IXBOD 1 -14R(D) 2
1500 ±50 IXBOD 1 -15R(D) 2
1600 ±50 IXBOD 1 -16R(D) 2
1700 ±50 IXBOD 1 -17R(D) 2
1800 ±50 IXBOD 1 -18R(D) 2
1900 ±50 IXBOD 1 -19R(D) 2
VBO Standard BOD -
V Types Elements
2000 ±50 IXBOD 1 -20R(D) 3
2100 ±50 IXBOD 1 -21R(D) 3
2200 ±50 IXBOD 1 -22R(D) 3
2300 ±50 IXBOD 1 -23R(D) 3
2400 ±50 IXBOD 1 -24R(D) 3
2500 ±50 IXBOD 1 -25R(D) 3
2600 ±100 IXBOD 1 -26R(D) 3
2800 ±100 IXBOD 1 -28R(D) 3
3000 ±100 IXBOD 1 -30R(D) 3
3200 ±100 IXBOD 1 -32R(D) 3
VBO Standard BOD -
V Types Elements
3400 ±100 IXBOD 1 -34R 4
3600 ±100 IXBOD 1 -36R 4
3800 ±100 IXBOD 1 -38R 4
4000 ±100 IXBOD 1 -40R 4
4200 ±100 IXBOD 1 -42R 4
Symbol Test Conditions Characteristic Values both Versions R & RD 2 BODs 3 BODs 4 BODs
IBO TVJ =25°C 151515mA
IHTVJ =25°C 303030mA
VHTVJ =25°C 4 - 8 4 - 8 4 - 8 V
(dv/dt)CTVJ =50°C; VD = 0.67·(VBO + 100V)
- VBO bis 1500V > 1000 - - V/µs
- VBO 1600 - 2000V > 1500 - - V/µs
- VBO 2100 - 2500V - > 2000 - V/µs
- VBO 2600 - 3000V - > 2500 - V/µs
- VBO 3200 - 3400V - - > 3000 V/µs
- VBO 3600 - 4200V - - > 3500 V/µs
(di/dt)CTVJ = 125°C; VD = VBO ; IT = 80A; f = 50 Hz 200 200 200 A/µs
tq(typ) TVJ = 125°CV
D = 0.67·VBO ; VR = 0V 150 150 150 µs
dv/dt(lin.) = 200V/µs; IT = 80A; di/dt = -10A/µs
IXBOD 1 -12R...42R(D)
2-3 BODs
Version: R Version: RD
IXYS reserve at these the right to change limits, test conditions and dimensions; Data according to IEC 60747
032
H - 5
© 2000 IXYS All rights reserved
IXBOD 1 -12R...42R(D)
Fig. 8 Transient thermal resistance.
KA
Dimensions in mm (1 mm = 0.0394")
Fig. 5 Energy per pulse for single BOD element
for trapezoidal wave current. EP must be multiplied
by number of elements for total energy.
Fig. 6 Energy per pulse for single BOD element
for exponentially decaying current pulse. EP must
be multiplied by number of elements for total
energy.
K
A
Va = 2 m/s
n = number of BOD-Elements in series
Va = 0 m/s
[K/W]
ZthJA
t [s]
Fig. 7 On-state voltage at TVJ = 125°C.
[V]
VT
iT [A]
H - 6 © 2000 IXYS All rights reserved
Application
Protection of thyristors against overvoltages in forward
direction.
VD
i
BOD
Thyristor
VBO (TVJ) = VBO, 25°C [1+KT(TVJ - 25°C)]
a. The maximum junction temperature shall be
calculated for a module IXBOD 1 -30R at an
ambient temperature Ta = 60 °C, an exponentially
decaying current ITM = 40A, a pulsewidth tp = 2 µs,
an operating frequency f = 50 Hz and natural
convection. From the diagram Fig. 6 the energy per
pulse is obtained:
Ep1 = 6 x 10-3 Ws
For a module IXBOD1-30R the number of single
IXBOD elements is:
n = 3
At natural air cooling the thermal resistance junction
to ambient amounts to (Fig.8):
RthJA = 20K/W
and the unknown temperature can be calculated as:
TVJmax1 = Ta + n • f • Ep • RthJA + Kp • Ep
TVJmax1 = 60 + 18 + 4.2 = 82.2°C
b. If following these steady-state conditions an
overload for 1 minute occurs with ITM= 60 A and a
pulse-width tp = 4 µs at the same operating
frequency f = 50 Hz, then the resulting maximum
junction temperature is calculating as follows:
TVJmax2 = TVJmax1 + (Ep2-Ep1) • n • f •ZthJA(t) + Kp • (Ep2-Ep1)
The diagrams Fig. 11 and Fig. 8 show
Ep2= 14x10-3 Ws
ZthJA(t = 1min) = 12K/W
From what follows:
TVJmax2 = 82.2 + 14.4 + 5,6 = 102.2 °C
which is allowed because the maximum admissible
junction temperature TVJM = 125 °C.
Calculation example
H - 7
© 2000 IXYS All rights reserved
Notice
1. A IXBOD element has a maximum reverse
blocking voltage of 10V.
2. For higher reverse voltages a fast, soft recovery
diode must be connected in series (Fig. 9).
This diode must fulfill the conditions of Fig. 10.
T : Thyristor
R1: Current limiting resistance (0 - 200 Ω)
D1: Series-diode (fast recovery diode)
D3: Protection diode
D4: Zener diode, typical VZ : 3-6 V
R2, C2: Protection against parasitic triggering;
recommended values:
R2 : 100 - 1000 Ω
C2 : 22 - 47 nF
R3, C3: Snubber network of the thyristor
Example of a circuit
A simple emergency tr iggering circuit.
Fig. 9 IXBOD protection by a fast recovery
diode.
Fast recovery IXBOD single
diode or
IXBOD module
C3
T
D4 D3
C2
R2
IXBOD
D1
z
R3
R1
Fig. 10 Maximum peak value of the
reverse current admissible for a given
pulse-width tB, which is required for the
suitable fast recovery series-diode.
IR
tB
0,1 µs 1 2 3 5 7 10
IR
tB
t
i
40
20
10
8
6
4
2
1
A
H - 8 © 2000 IXYS All rights reserved
