IXA20I1200PB
preliminary
Single IGBT
XPT IGBT
(C) 2
(E) 3
(G) 1
Part number
IXA20I1200PB
Backside: collector
C25
CE(sat)
VV1.8
CES
38
1200
=
V= V
I= A
Features / Ad vantages: Applications: Package:
● Easy paralleling due to the positive temperature
coefficient of the on-state voltage
● Rugged XPT design (Xtreme light Punch Through)
results in:
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
- square RBSOA @ 3x Ic
● Thin wafer technology combined with the XPT design
results in a competitive low VCE(sat)
● AC motor drives
● Solar inverter
● Medical equipment
● Uninterruptible power supply
● Air-conditioning systems
● Welding equipment
● Switched-mode and resonant-mode
power supplies
● Inductive heating, cookers
● Pumps, Fans
TO-220
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions. 20131024aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
IXA20I1200PB
preliminary
-di /dt = A/µs
T = °C
V
CES
V1200
collector emitter voltage
collector emitter saturation voltage
T = 25°C
collect or current A
38
A
C
VJ
Symbol Definition
Ratings
typ. max.min.Conditions Unit
22
V
V
CE(sat)
total power dissipation 165 W
collector emitter leakage current
6.5 V
turn-on delay time 70 ns
t
reverse bias safe operating area
A
V
GES
V±20
V
GEM
max. transient ga te emitte r vo l t a g e
T = °C
C
V
P
tot
gate emitter threshold voltage
RBSOA
45
±30
T = °C
T = °C
VJ
V
max. DC gate voltage
I
C25
I
C
T = 25°C
VJ
I = A; V = 15 V
CGE
T = 25°C
VJ
V
GE(th)
I
CES
I = mA; V = V
CGECE
V = V ; V = 0 V
CE CES GE
I
GES
T = 25°C
VJ
gate emitter leakage current V = ±20 V
GE
2.1
2.1
5.95.4
mA
0.1 mA
0.1
500
G(on)
total gate charge V = V; V = 15 V; I = A
CE
Q
GE C
47 nC
t
t
t
E
E
d(on)
r
d(off)
f
on
off
40 ns
250 ns
100 ns
1.65 mJ
1.7 mJ
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load
V = V; I = A
V = ±15 V; R = Ω
CE C
GE G
V = ±15 V; R = Ω
GE G
V = V
CEmax
1200
short circuit safe operating area
µs
SCSOA
10T = °C
VJ
V = V; V = ±15 V
CE GE
short circuit duration
t
short circuit current
I
SC
SC
R = Ω; non-repetitive
G
60 A
R
thJC
thermal resistance junction to case 0.76 K/W
V
RRM
V1200
max. repetitive rev ers e voltage T = 25°C
VJ
T = 25°C
forward current A
tbd
A
C
tbdT = °C
C
I
F25
I
F
T = 25°C
forward voltage V
tbd
V
VJ
tbdT = 125°C
VJ
V
F
I = A
F
T = 25°C
reverse current mA
*
mA
VJ
*T = 125°C
VJ
I
RR RRM
T = 125°C
VJ
Q
I
t
rr
RM
rr
tbd µC
tbd A
tbd ns
reverse recovery charge
max. reverse recovery current
reverse recovery time
V =
I = A; V = 0 V
F
FGE
E
rec
tbd mJ
reverse recovery energy
R
R
thJC
thermal resistance junction to case tbd K/W
V = V
T = 25°C
C
T = 25°C
VJ
T = °C
VJ
VJ
15
0.6
15
15
56
56
56
600
900
600
I
CM
1.8
R
thCH
thermal resistance case to heatsink K/W
R
thCH
thermal resistance case to heatsink K/W
* not applicable, see Ices value above
IGBT
Diode
600 V
V = V
CEmax
900
80
80
80
80
125
125
125
125
125
nA
0.50
IXYS reserves the right to change limits, conditions and dimensions. 20131024aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
IXA20I1200PB
preliminary
Ratings
XXXXXX
Zyyww
Logo
Part Number
Date Code
Lot #
abcdef
Product Markin
g
A
ssembly Line
I
X
A
20
I
1200
PB
Part number
IGBT
XPT IGBT
Gen 1 / std
Single IGBT
TO-220AB (3)
=
=
=
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
op
°C
M
D
Nm0.6
mounting torque 0.4
T
VJ
°C150
virt ua l j un ctio n temp eratu re -40
Weight g2
Symbol Definition typ. max.min.Conditions
operation temperature
Unit
F
C
N60
mount ing for ce w i th cli p 20
I
RMS
RMS current 35 A
per terminal
125-40
TO-220
Similar Part Package Voltage class
IXA20IF1200HB TO-247AD (3) 1200
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
IXA20I1200PB 507929Tube 50IXA20I1200PBStandard
T
stg
°C150
storage temperature -40
threshold voltage V
mΩ
V
0 max
R
0 max
slope resistance *
1.1
86
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
IGBT
150 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20131024aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
IXA20I1200PB
preliminary
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.32 4.82 0.170 0.190
A1 1.14 1.39 0.045 0.055
A2 2.29 2.79 0.090 0.110
b 0.64 1.01 0.025 0.040
b2 1.15 1.65 0.045 0.065
C 0.35 0.56 0.014 0.022
D 14.73 16.00 0.580 0.630
E 9.91 10.66 0.390 0.420
e 2.54 BSC 0.100 BSC
H1 5.85 6.85 0.230 0.270
L 12.70 13.97 0.500 0.550
L1 2.79 5.84 0.110 0.230
ØP 3.54 4.08 0.139 0.161
Q 2.54 3.18 0.100 0.125
3x b2
E
ØP
Q
D
L1
L
3x b 2x e C
A2
H1
A1
A
123
4
(C) 2
(E) 3
(G) 1
Outlines TO-220
IXYS reserves the right to change limits, conditions and dimensions. 20131024aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
