IRFF9230 - Intersil Corporation - Datasheet.Directory

4-114

File Number 2225.2

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

IRFF9230

-4.0A, -200V, 0.800 Ohm, P-Channel Power

MOSFET

This P-Channel enhancement mode silicon gate power ﬁeld

effect transistor is an advanced power MOSFET designed,

tested, and guaranteed to withstand a speciﬁed level of

energy in the breakdown avalanche mode of operation. All of

these power MOSFETs are designed for applications such

as switching regulators, switching converters, motor drivers,

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated

circuits.

Formerly developmental type TA17512.

Features

• -4.0A, -200V

•r

DS(ON) = 0.800Ω

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

Symbol

Packaging

JEDEC TO-205AF

Ordering Information

PART NUMBER PACKAGE BRAND

IRFF9230 TO-205AF IRFF9230

NOTE: When ordering, use the entire part number.

SOURCE

DRAIN

(CASE)

GATE

Data Sheet February 1999

4-115

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Speciﬁed IRFF9230 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS -200 V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR -200 V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID-4.0 A

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM -16 A

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD25 W

Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2 W/oC

Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS 500 mJ

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

L300 oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ= 25oC to 125oC.

Electrical Speciﬁcations TC = 25oC, Unless Otherwise Speciﬁed

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BVDSS ID = -250µA, VGS = 0V, (Figure 10) -200 - - V

Gate Threshold Voltage VGS(TH) VGS = VDS, ID = -250µA -2 - -4 V

Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - -25 µA

VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC - - -250 µA

On-State Drain Current (Note 2) ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = -10V -4.0 - - A

Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA

Drain to Source On Resistance (Note 2) rDS(ON) ID = -2.0A, VGS = -10V, (Figures 8, 9) - 0.5 0.800 Ω

Forward Transconductance (Note 2) gfs VDS > ID(ON) x rDS(ON)MAX, ID = -2.0A, (Figure 12) 2.2 3.5 - S

Turn-On Delay Time td(ON) VDD = 0.5BVDSS, ID≈ -4.0A, RG = 9.1Ω,

RL = 2.5Ωfor BVDSS = -200V

RL = 18.7Ωfor BVDSS = -150V

(Figures 17, 18) MOSFET Switching Times are

Essentially Independent of Operating

Temperature

-3050ns

Rise Time tr- 50 100 ns

Turn-Off Delay Time td(OFF) - 50 100 ns

Fall Time tf-4080ns

Total Gate Charge

(Gate to Source + Gate to Drain) Qg(TOT) VGS = -10V, ID = -4.0A, VDS = 0.8 x Rated BVDSS,

IG(REF) = -1.5mA, (Figures 14, 19, 20)

Gate Charge is Essentially Independent of

Operating Temperature

-3145nC

Gate to Source Charge Qgs -18-nC

Gate to Drain “Miller” Charge Qgd -13-nC

Input Capacitance CISS VDS = -25V, VGS = 0V, f = 1MHz, (Figure 11) - 550 - pF

Output Capacitance COSS - 170 - pF

Reverse Transfer Capacitance CRSS -50-pF

Internal Drain Inductance LDMeasured From the Drain

Lead, 5mm (0.2in) From

Package to Center of Die

Modified MOSFET

Symbol Showing the In-

ternal Devices

Inductances

- 5.0 - nH

Internal Source Inductance LSMeasured From the Source

Lead, 5mm (0.2in) From

Header to Source Bonding

Pad

-15-nH

Thermal Resistance Junction to Case RθJC - - 5.0 oC/W

Thermal Resistance

Junction to Ambient RθJA Typical Socket Mount - - 175 oC/W

IRFF9230

4-116

Source to Drain Diode Speciﬁcations

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current ISD Modified MOSFET Symbol

Showing the Integral

Reverse P-N Junction

Rectifier

- - -4.0 A

Pulse Source to Drain Current

(Note 3) ISM - - -16 A

Source to Drain Diode Voltage (Note 2) VSD TC = 25oC, ISD = -4.0A, VGS = 0V, (Figure 13) - - -1.5 V

Reverse Recovery Time trr TJ = 150oC, ISD = -4.0A, dISD/dt = 100A/µs - 400 - ns

Reverse Recovery Charge QRR TJ = 150oC, ISD = -4.0A, dISD/dt = 100A/µs - 2.6 - µC

NOTES:

2. Pulse test: pulse width ≤300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD = 50V, starting TJ= 25oC, L = 46.9mH, RG= 25Ω, peak IAS = 4.0A (Figures 15, 16).

Typical Performance Curves Unless Otherwise Speciﬁed

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

FIGURE 3. NORMALIZED TRANSIENT THERMAL IMPEDANCE

TC, CASE TEMPERATURE (oC)

POWER DISSIPATION MULTIPLIER

00 25 50 75 100 150

0.2

0.4

0.6

0.8

1.0

1.2

125 050 100

ID, DRAIN CURRENT (A)

TC, CASE TEMPERATURE (oC)

150

25 75 125

-5

-4

-3

-2

-1

t1, RECTANGULAR PULSE DURATION (s)

ZθJC, NORMALIZED

TRANSIENT THERMAL IMPEDANCE

10-3 10-2

10-5 10-4

0.01

0.1

10-1 1

PDM

NOTES:

DUTY FACTOR: D = t1/t2

PEAK TJ = PDM x ZθJC x RθJC + TC

SINGLE PULSE

0.1

0.02

0.2

0.5

0.01

0.05

IRFF9230

4-117

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS

FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS

NOTE: Heating effect of 2µs pulse is minimal.

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

Typical Performance Curves Unless Otherwise Speciﬁed (Continued)

VDS, DRAIN TO SOURCE VOLTAGE (V)

-10

ID, DRAIN CURRENT (A)

-100

-1

-10-1

-0.1 -1000

10µs

100µs

1ms

10ms

100ms

SINGLE PULSE

TJ = MAX RATED

TC = 25oC

OPERATION IN THIS AREA

IS LIMITED BY rDS(ON)

ID, DRAIN CURRENT (A)

0 -10 -20 -30 -40

-3

-6

-9

-12

-15

-50

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = -10V VGS = -9V

VGS = -7V

VGS = -6V

VGS = -5V

VGS = -4V

80µs PULSE TEST

VGS = -8V

-3

0-2 -4 -6 -10

-6

-9

ID, DRAIN CURRENT (A)

VDS, DRAIN TO SOURCE VOLTAGE (V)

-12

-8

-15

VGS = -10V

-9V

PULSE DURATION = 80µs

-6V

-8V

-5V

-4V

-7V

-15

-12

-9

-6

-3

00 -2-4 -6-8-10

VGS, GATE TO SOURCE VOLTAGE (V)

PULSE DURATION = 80µs

VDS ≥ID(ON) x rDS(ON) MAX

ID(ON), ON-STATE DRAIN CURRENT (A)

TJ = 125oC

TJ = 25oC

TJ = -55oC

1.2

-5 -10 -15 -20

rDS(ON), DRAIN TO SOURCE

ID, DRAIN CURRENT (A) -25

1.6

0.4

0.8

VGS = -20V

PULSE DURATION = 2µs

2.0

VGS = -10V

ON RESISTANCE (Ω)

NORMALIZED DRAIN TO SOURCE

2.5

1.5

1.0

0.5

-40 0 40

TJ, JUNCTION TEMPERATURE (oC)

120

2.0

VGS = -10V, ID = -2A

160

ON RESISTANCE

IRFF9230

4-118

FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

Typical Performance Curves Unless Otherwise Speciﬁed (Continued)

1.25

0.95

0.85

0.75

-40 0 40

TJ, JUNCTION TEMPERATURE (oC)

NORMALIZED DRAIN TO SOURCE

BREAKDOWN VOLTAGE

80 120 160

1.05

1.15

ID = -250µA2000

400

00-20 -50

C, CAPACITANCE (pF)

1200

VDS, DRAIN TO SOURCE VOLTAGE (V)

1600

800 CISS

COSS CRSS

-10 -30 -40

CISS = CGS + CGD

CRSS = CGD

COSS ≈ CDS + CGD

VGS = 0V, f = 1MHz

ID, DRAIN CURRENT (A)

gfs, TRANSCONDUCTANCE (S)

0 -3 -6 -9 -12

1.4

2.8

4.2

5.6

7.0

-15

TJ = 125oC

TJ = 25oC

TJ = -55oC

PULSE DURATION = 80µs

0-0.4 -1.0 -1.2 -1.6 -1.8-0.6 VSD, SOURCE TO DRAIN VOLTAGE (V)

-0.8 -1.4

-0.1

-1.0

-10

ISD, SOURCE TO DRAIN CURRENT (A)

-100

TJ = 25oC

TJ = 150oC

-5

-10

-15

0 8 16243240

VDS = -160V

VDS = -100V

VDS = -40V

ID = -4A

Qg(TOT), TOTAL GATE CHARGE (nC)

VGS, GATE TO SOURCE (V)

IRFF9230

4-119

Test Circuits and Waveforms

FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS

FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS

FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS

0.01Ω

IAS

VDS

VDD

DUT

VARY tP TO OBTAIN

REQUIRED PEAK IAS

VGS

VDD

VDS

BVDSS

IAS

tAV

VGS

DUT

-VDD

td(ON)

90%

10%

VDS 90%

td(OFF)

tOFF

90%

50%

10%

PULSE WIDTH

VGS

tON

10%

0.3µF

12V

BATTERY 50kΩ

+VDS

DUT

IG(REF)

(ISOLATED

-VDS

0.2µF

CURRENT

REGULATOR

ID CURRENT

SAMPLING

IG CURRENT

SAMPLING

SUPPLY)

RESISTOR RESISTOR

DUT

Qg(TOT)

Qgd

Qgs

VDS

VGS

VDD

IG(REF)

IRFF9230

4-120

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Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-

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IRFF9230