MMBZ5221B~MMBZ5267B Zener diode Features 1. High reliability 2. Wide voltage range available 3. Low reverse current level 4. Small outline package for space savings 5. Surface mount package Applications Voltage stabilization Absolute Maximum Ratings Tj=25 Parameter Test Conditions Type Symbol Value Unit PV 410 mW Z-current IZ PV/VZ mA Junction temperature Tj 150 Tstg -55~+150 Symbol Value Unit RthJA 300 K/W Tamb75 Power dissipation Storage temperature range Maximum Thermal Resistance Tj=25 Parameter Junction ambient Test Conditions I=9.5mm(3/8") TL=constant Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may affect device reliability. Electrical Characteristics Tj=25 Parameter Forward voltage Test Conditions Type IF=10mA Symbol VF Min Typ Max Unit 0.9 V Excel Semiconductor www.excel-semi.com FaxBack +86-512-66607370 Rev. 3e, 1-Nov-2006 1/4 MMBZ5221B~MMBZ5267B VZnom1) IZT for rzjT rzjK at IZK IR at VR TKVZ V mA mA A V %/K MMBZ5221B 18A 2.4 20 <30 <1200 0.25 <100 1.0 <-0.085 MMBZ5222B 18B 2.5 20 <30 <1250 0.25 <100 1.0 <-0.085 MMBZ5223B 18C 2.7 20 <30 <1300 0.25 <75 1.0 <-0.080 MMBZ5224B 18D 2.8 20 <30 <1400 0.25 <75 1.0 <-0.080 MMBZ5225B 18E 3.0 20 <29 <1600 0.25 <50 1.0 <-0.075 MMBZ5226B 8A 3.3 20 <28 <1600 0.25 <25 1.0 <-0.070 MMBZ5227B 8B 3.6 20 <24 <1700 0.25 <15 1.0 <-0.065 MMBZ5228B 8C 3.9 20 <23 <1900 0.25 <10 1.0 <-0.060 MMBZ5229B 8D 4.3 20 <22 <2000 0.25 <5 1.0 <+0.055 MMBZ5230B 8E 4.7 20 <19 <1900 0.25 <5 2.0 <+0.030 MMBZ5231B 8F 5.1 20 <17 <1600 0.25 <5 2.0 <+0.030 MMBZ5232B 8G 5.6 20 <11 <1600 0.25 <5 3.0 <+0.038 MMBZ5233B 8H 6.0 20 <7 <1600 0.25 <5 3.5 <+0.038 MMBZ5234B 8J 6.2 20 <7 <1000 0.25 <5 4.0 <+0.045 MMBZ5235B 8K 6.8 20 <5 <750 0.25 <3 5.0 <+0.050 MMBZ5236B 8L 7.5 20 <6 <500 0.25 <3 6.0 <+0.058 MMBZ5237B 8M 8.2 20 <8 <500 0.25 <3 6.5 <+0.062 MMBZ5238B 8N 8.7 20 <8 <600 0.25 <3 6.5 <+0.065 MMBZ5239B 8P 9.1 20 <10 <600 0.25 <3 7.0 <+0.068 MMBZ5240B 8Q 10 20 <17 <600 0.25 <3 8.0 <+0.075 MMBZ5241B 8R 11 20 <22 <600 0.25 <2 8.4 <+0.076 MMBZ5242B 8S 12 20 <30 <600 0.25 <1 9.1 <+0.077 MMBZ5243B 8T 13 9.5 <13 <600 0.25 <0.5 9.9 <+0.079 MMBZ5244B 8U 14 9.0 <15 <600 0.25 <0.1 10 <+0.082 MMBZ5245B 8V 15 8.5 <16 <600 0.25 <0.1 11 <+0.082 MMBZ5246B 8W 16 7.8 <17 <600 0.25 <0.1 12 <+0.083 MMBZ5247B 8X 17 7.4 <19 <600 0.25 <0.1 13 <+0.084 MMBZ5248B 8Y 18 7.0 <21 <600 0.25 <0.1 14 <+0.085 MMBZ5249B 8Z 19 6.6 <23 <600 0.25 <0.1 15 <+0.086 MMBZ5250B 81A 20 6.2 <25 <600 0.25 <0.1 16 <+0.086 MMBZ5251B 81B 22 5.6 <29 <600 0.25 <0.1 17 <+0.087 MMBZ5252B 81C 24 5.2 <33 <600 0.25 <0.1 18 <+0.088 MMBZ5253B 81D 25 5.0 <35 <600 0.25 <0.1 19 <+0.089 MMBZ5254B 81E 27 4.6 <41 <600 0.25 <0.1 21 <+0.090 MMBZ5255B 81F 28 4.5 <44 <600 0.25 <0.1 21 <+0.091 MMBZ5256B 81G 30 4.2 <49 <600 0.25 <0.1 23 <+0.091 MMBZ5257B 81H 33 3.8 <58 <700 0.25 <0.1 25 <+0.092 MMBZ5258B 81J 36 3.4 <70 <700 0.25 <0.1 27 <+0.093 MMBZ5259B 81K 39 3.2 <80 <800 0.25 <0.1 30 <+0.094 MMBZ5260B 18F 43 3.0 <93 <900 0.25 <0.1 33 <+0.095 MMBZ5261B 81M 47 2.7 <105 <1000 0.25 <0.1 36 <+0.095 MMBZ5262B 81N 51 2.5 <125 <1100 0.25 <0.1 39 <+0.096 MMBZ5263B 81P 56 2.2 <150 <1300 0.25 <0.1 43 <+0.096 MMBZ5264B 81Q 60 2.1 <170 <1400 0.25 <0.1 46 <+0.097 MMBZ5265B 81R 62 2.0 <185 <1400 0.25 <0.1 47 <+0.097 MMBZ5266B 81S 68 1.8 <230 <1600 0.25 <0.1 52 <+0.097 MMBZ5267B 81T 75 1.7 <270 <1700 0.25 <0.1 58 <+0.098 1) Based on DC-measurement at thermal equilibrium while maintaining the lead temperature(TL)at 30, Type Marking 9.5mm(3/8") from the diode body. Excel Semiconductor www.excel-semi.com FaxBack +86-512-66607370 Rev. 3e, 1-Nov-2006 2/4 MMBZ5221B~MMBZ5267B Characteristics (Tj=25 unless otherwise specified) Figure 1. Zener voltage versus zener current Figure 2. Typical forward voltage Figure 3. Typical leakage current Figure 4. Effect of zener voltage on zener impendance Figure 5. Typical capacitance Excel Semiconductor www.excel-semi.com FaxBack +86-512-66607370 Rev. 3e, 1-Nov-2006 3/4 MMBZ5221B~MMBZ5267B Dimensions Style 8: PIN 1. Anode 2. No connection 3. Cathode Notes: 1. Dimensioning and tolerance per ANSI Y14.5M, 1982. 2. Controlling dimension: inch. 3. Maximum lead thickness includes lead finish thickness. Minimum lead thickness is the minimum thickness of base material. SOT-23 Footprint Excel Semiconductor www.excel-semi.com FaxBack +86-512-66607370 Rev. 3e, 1-Nov-2006 4/4