LM111JAN
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LM111JAN Voltage Comparator
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1FEATURES DESCRIPTION
The LM111 is a voltage comparator that has input
2• Operates from Single 5V Supply currents nearly a thousand times lower than devices
• Input Current: 200 nA max. Over Temperature such as the LM106 or LM710. It is also designed to
• Offset Current: 20 nA max. Over Temperature operate over a wider range of supply voltages: from
standard ±15V op amp supplies down to the single
• Differential Input Voltage Range: ±30V 5V supply used for IC logic. The output is compatible
• Power Consumption: 135 mW at ±15V with RTL, DTL and TTL as well as MOS circuits.
• Power Supply Voltage, single 5V to ±15V Further, it can drive lamps or relays, switching
voltages up to 50V at currents as high as 50 mA.
• Offset Voltage Null Capability
• Strobe Capability Both the inputs and the outputs of the LM111 can be
isolated from system ground, and the output can
drive loads referred to ground, the positive supply or
the negative supply. Offset balancing and strobe
capability are provided and outputs can be wire
OR'ed. Although slower than the LM106 and LM710
(200 ns response time vs 40 ns) the device is also
much less prone to spurious oscillations. The LM111
has the same pin configuration as the LM106 and
LM710.
Connection Diagrams
Note: Pin 4 connected to case
Figure 1. Metal Can Package
Top View
See Package Number LMC0008C
Figure 2. Dual-In-Line Package Figure 3. Dual-In-Line Package
Top View Top View
See Package Number NAB0008A See Package Number J0014A
1Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date. Copyright © 2008–2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
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Figure 4. See Package Number NAD0010A, NAC0010A
Schematic Diagram
Note: Pin connections shown on schematic diagram are for LMC0008C package.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
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Absolute Maximum Ratings(1)
Positive Supply Voltage +30.0V
Negative Supply Voltage -30.0V
Total Supply Voltage 36V
Output to Negative Supply Voltage 50V
GND to Negative Supply Voltage 30V
Differential Input Voltage ±30V
Sink Current 50mA
Input Voltage(2) ±15V
Power Dissipation(3) 8 LD CERDIP 400mW @ 25°C
8 LD Metal Can 330mW @ 25°C
10 LD CERPACK 330mW @ 25°C
10 LD Ceramic SOIC 330mW @ 25°C
14 LD CERDIP 400mW @ 25°C
Output Short Circuit Duration 10 seconds
Maximum Strobe Current 10mA
Operating Temperature Range -55°C ≤TA≤125°C
Thermal Resistance θJA 8 LD CERDIP (Still Air @ 0.5W) 120°C/W
8 LD CERDIP (500LF/Min Air flow @ 0.5W) 76°C/W
8 LD Metal Can (Still Air @ 0.5W) 150°C/W
8 LD Metal Can (500LF/Min Air flow @ 0.5W) 92°C/W
10 Ceramic SOIC (Still Air @ 0.5W) 231°C/W
10 Ceramic SOIC (500LF/Min Air flow @ 0.5W) 153°C/W
10 CERPACK (Still Air @ 0.5W) 231°C/W
10 CERPACK (500LF/Min Air flow @ 0.5W) 153°C/W
14 LD CERDIP (Still Air @ 0.5W) 120°C/W
14 LD CERDIP (500LF/Min Air flow @ 0.5W) 65°C/W
θJC 8 LD CERDIP 35°C/W
8 LD Metal Can Pkg 40°C/W
10 LD Ceramic SOIC 60°C/W
10 LD CERPACK 60°C/W
14 LD CERDIP 35°C/W
Storage Temperature Range -65°C ≤TA≤150°C
Maximum Junction Temperature 175°C
Lead Temperature (Soldering, 60 seconds) 300°C
Voltage at Strobe Pin V+-5V
Package Weight (Typical) 8 LD Metal Can 965mg
8 LD CERDIP 1100mg
10 LD CERPACK 250mg
10 LD Ceramic SOIC 225mg
14 LD CERDIP TBD
ESD Rating(4) 300V
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is functional, but do not ensure specific performance limits. For ensured specifications and test conditions, see the
Electrical Characteristics. The ensured specifications apply only for the test conditions listed. Some performance characteristics may
degrade when the device is not operated under the listed test conditions.
(2) This rating applies for ±15V supplies. The positive input voltage limit is 30 V above the negative supply. The negative input voltage limit
is equal to the negative supply voltage or 30V below the positive supply, whichever is less.
(3) The maximum power dissipation must be derated at elevated temperatures and is dictated by TJmax (maximum junction temperature),
θJA (package junction to ambient thermal resistance), and TA(ambient temperature). The maximum allowable power dissipation at any
temperature is PDmax = (TJmax - TA)/θJA or the number given in the Absolute Maximum Ratings, whichever is lower.
(4) Human body model, 1.5 kΩin series with 100 pF.
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Recommended Operating Conditions
Supply Voltage VCC = ±15VDC
Operating Temperature Range -55°C ≤TA≤125°C
Quality Conformance Inspection
Mil-Std-883, Method 5005 — Group A
Subgroup Description Temperature (°C)
1 Static tests at +25
2 Static tests at +125
3 Static tests at -55
4 Dynamic tests at +25
5 Dynamic tests at +125
6 Dynamic tests at -55
7 Functional tests at +25
8A Functional tests at +125
8B Functional tests at -55
9 Switching tests at +25
10 Switching tests at +125
11 Switching tests at -55
LM111 JAN Electrical Characteristics DC Parameters
The following conditions apply, unless otherwise specified.
DC: VCC = ±15V, VCM = 0 Sub-
Symbol Parameter Conditions Notes Min Max Unit groups
VIO Input Offset Voltage VI= 0V, RS= 50Ω-3.0 +3.0 mV 1
-4.0 +4.0 mV 2, 3
+VCC = 29.5V, -VCC = -0.5V, -3.0 +3.0 mV 1
VI= 0V, VCM = -14.5V, -4.0 +4.0 mV 2, 3
RS= 50Ω
+VCC = 2V, -VCC = -28V, -3.0 +3.0 mV 1
VI= 0V, VCM = +13V, -4.0 +4.0 mV 2, 3
RS= 50Ω
+VCC = +2.5V, -VCC = -2.5V, -3.0 +3.0 mV 1
VI= 0V, RS= 50Ω-4.0 +4.0 mV 2, 3
VIO R Raised Input Offset Voltage VI= 0V, RS= 50Ω-3.0 +3.0 mV 1
See(1) -4.5 +4.5 mV 2, 3
+VCC = 29.5V, -VCC = -0.5V, -3.0 +3.0 mV 1
VI= 0V, VCM = -14.5V, See(1) -4.5 +4.5 mV 2, 3
RS= 50Ω
+VCC = 2V, -VCC = -28V, -3.0 +3.0 mV 1
VI= 0V, VCM = +13V, See(1) -4.5 +4.5 mV 2, 3
RS= 50Ω
IIO Input Offset Current VI= 0V, RS= 50KΩ-10 +10 nA 1, 2
-20 +20 nA 3
+VCC = 29.5V, -VCC = -0.5V, -10 +10 nA 1, 2
VI= 0V, VCM = -14.5V, -20 +20 nA 3
RS= 50KΩ
+VCC = 2V, -VCC = -28V, -10 +10 nA 1, 2
VI= 0V, VCM = +13V, -20 +20 nA 3
RS= 50KΩ
(1) Subscript (R) indicates tests which are performed with input stage current raised by connecting BAL and BAL/STB terminals to +VCC.
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LM111 JAN Electrical Characteristics DC Parameters (continued)
The following conditions apply, unless otherwise specified.
DC: VCC = ±15V, VCM = 0 Sub-
Symbol Parameter Conditions Notes Min Max Unit groups
IIOR Raised Input Offset Current VI= 0V, RS= 50KΩ-25 +25 nA 1, 2
See(1) -50 +50 nA 3
±IIB Input Bias Current VI= 0V, RS= 50KΩ-100 0.1 nA 1, 2
-150 0.1 nA 3
+VCC = 29.5V, -VCC = -0.5V, -150 0.1 nA 1, 2
VI= 0V, VCM = -14.5V, -200 0.1 nA 3
RS= 50KΩ
+VCC = 2V, -VCC = -28V, -150 0.1 nA 1, 2
VI= 0V, VCM = +13V, -200 0.1 nA 3
RS= 50KΩ
VOSt Collector Output Voltage (Strobe) +VI= Gnd, -VI= 15V, See(2) 14 V 1, 2, 3
ISt = -3mA, RS= 50Ω
CMRR Common Mode Rejection -28V ≤-VCC ≤-0.5V, RS=50Ω, 2V ≤
+VCC ≤29.5V, RS= 50Ω, -14.5V ≤80 dB 1, 2, 3
VCM ≤13V,RS= 50Ω
VOL Low Level Output Voltage +VCC = 4.5V, -VCC = Gnd,
IO= 8mA, ±VI= 0.5V, See(3) 0.4 V 1, 2, 3
VID = -6mV
+VCC = 4.5V, -VCC = Gnd,
IO= 8mA, ±VI= 3V, See(3) 0.4 V 1, 2, 3
VID = -6mV
IO= 50mA, ±VI = 13V, See(3) 1.5 V 1, 2, 3
VID = -5mV
IO= 50mA, ±VI = -14V, See(3) 1.5 V 1, 2, 3
VID = -5mV
ICEX Output Leakage Current +VCC = 18V, -VCC = -18V, -1.0 10 nA 1
VO= 32V -1.0 500 nA 2
IIL Input Leakage Current +VCC = 18V, -VCC = -18V, -5.0 500 nA 1, 2, 3
+VI= +12V, -VI= -17V
+VCC = 18V, -VCC = -18V, -5.0 500 nA 1, 2, 3
+VI= -17V, -VI= +12V
+ICC Power Supply Current 6.0 mA 1, 2
7.0 mA 3
-ICC Power Supply Current -5.0 mA 1, 2
-6.0 mA 3
ΔVIO /ΔT Temperature Coefficient Input 25°C ≤T≤125°C See(4) -25 25 uV/°C 2
Offset Voltage -55°C ≤T≤25°C See(4) -25 25 uV/°C 3
ΔIIO /ΔT Temperature Coefficient Input 25°C ≤T≤125°C See(4) -100 100 pA/°C 2
Offset Current -55°C ≤T≤25°C See(4) -200 200 pA/°C 3
IOS Short Circuit Current VO= 5V, t ≤10mS, -VI= 0.1V, 200 mA 1
+VI= 0V 150 mA 2
250 mA 3
+VIO adj. Input Offset Voltage (Adjustment) VO= 0V, VI= 0V, RS= 50Ω5.0 mV 1
-VIO adj. Input Offset Voltage (Adjustment) VO= 0V, VI= 0V, RS= 50Ω-5.0 mV 1
±AVE Voltage Gain (Emitter) RL= 600ΩSee(5) 10 V/mV 4
See(5) 8.0 V/mV 5, 6
(2) IST =−2mA at −55°C
(3) VID is voltage difference between inputs.
(4) Calculated parameter.
(5) Datalog reading in K=V/mV.
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LM111 JAN Electrical Characteristics AC Parameters
The following conditions apply, unless otherwise specified.
AC: VCC = ±15V, VCM = 0 Sub-
Symbol Parameter Conditions Notes Min Max Unit groups
tRLHC Response Time (Collector Output) VOD(Overdrive) = -5mV, 300 nS 7, 8B
CL= 50pF, VI= -100mV 640 nS 8A
tRHLC Response Time (Collector Output) VOD(Overdrive) = 5mV, 300 nS 7, 8B
CL= 50pF, VI= 100mV 500 nS 8A
LM111 JAN Electrical Characteristics DC Drift Parameters
The following conditions apply, unless otherwise specified.
DC: VCC = ±15V, VCM = 0
Delta calculations performed on JANS devices at group B , subgroup 5. Sub-
Symbol Parameter Conditions Notes Min Max Unit groups
VIO Input Offset Voltage VI= 0V, RS= 50Ω-0.5 0.5 mV 1
+VCC = 29.5V, -VCC = -0.5V,
VI= 0V, VCM = -14.5V, -0.5 0.5 mV 1
RS= 50Ω
+VCC = 2V, -VCC = -28V,
VI= 0V, VCM = +13V, -0.5 0.5 mV 1
RS= 50Ω
±IIB Input Bias Current VI= 0V, RS= 50KΩ-12.5 12.5 nA 1
+VCC = 29.5V, -VCC = -0.5V,
VI= 0V, VCM = -14.5V, -12.5 12.5 nA 1
RS= 50KΩ
+VCC = 2V, -VCC = -28V,
VI= 0V, VCM = +13V, -12.5 12.5 nA 1
RS= 50KΩ
ICEX Output Leakage Current +VCC = 18V, -VCC = -18V, -5.0 5.0 nA 1
VO= 32V
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LM111 Typical Performance Characteristics
Input Bias Current Input Bias Current
Figure 5. Figure 6.
Input Bias Current Input Bias Current
Figure 7. Figure 8.
Input Bias Current Input Bias Current
Figure 9. Figure 10.
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LM111 Typical Performance Characteristics (continued)
Input Bias Current Input Bias Current
Input Overdrives Input Overdrives
Figure 11. Figure 12.
Response Time for Various
Input Bias Current Input Overdrives
Figure 13. Figure 14.
Response Time for Various
Input Overdrives Output Limiting Characteristics
Figure 15. Figure 16.
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LM111 Typical Performance Characteristics (continued)
Supply Current Supply Current
Figure 17. Figure 18.
Leakage Currents
Figure 19.
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APPLICATION HINTS
CIRCUIT TECHNIQUES FOR AVOIDING
OSCILLATIONS IN COMPARATOR APPLICATIONS
When a high-speed comparator such as the LM111 is used with fast input signals and low source impedances,
the output response will normally be fast and stable, assuming that the power supplies have been bypassed (with
0.1 μF disc capacitors), and that the output signal is routed well away from the inputs (pins 2 and 3) and also
away from pins 5 and 6.
However, when the input signal is a voltage ramp or a slow sine wave, or if the signal source impedance is high
(1 kΩto 100 kΩ), the comparator may burst into oscillation near the crossing-point. This is due to the high gain
and wide bandwidth of comparators such as the LM111. To avoid oscillation or instability in such a usage,
several precautions are recommended, as shown in Figure 20 below.
1. The trim pins (pins 5 and 6) act as unwanted auxiliary inputs. If these pins are not connected to a trim-pot,
they should be shorted together. If they are connected to a trim-pot, a 0.01 μF capacitor C1 between pins 5
and 6 will minimize the susceptibility to AC coupling. A smaller capacitor is used if pin 5 is used for positive
feedback as in Figure 20.
2. Certain sources will produce a cleaner comparator output waveform if a 100 pF to 1000 pF capacitor C2 is
connected directly across the input pins.
3. When the signal source is applied through a resistive network, RS, it is usually advantageous to choose an
RS′of substantially the same value, both for DC and for dynamic (AC) considerations. Carbon, tin-oxide, and
metal-film resistors have all been used successfully in comparator input circuitry. Inductive wire wound
resistors are not suitable.
4. When comparator circuits use input resistors (e.g. summing resistors), their value and placement are
particularly important. In all cases the body of the resistor should be close to the device or socket. In other
words there should be very little lead length or printed-circuit foil run between comparator and resistor to
radiate or pick up signals. The same applies to capacitors, pots, etc. For example, if RS=10 kΩ, as little as 5
inches of lead between the resistors and the input pins can result in oscillations that are very hard to damp.
Twisting these input leads tightly is the only (second best) alternative to placing resistors close to the
comparator.
5. Since feedback to almost any pin of a comparator can result in oscillation, the printed-circuit layout should be
engineered thoughtfully. Preferably there should be a ground plane under the LM111 circuitry, for example,
one side of a double-layer circuit card. Ground foil (or, positive supply or negative supply foil) should extend
between the output and the inputs, to act as a guard. The foil connections for the inputs should be as small
and compact as possible, and should be essentially surrounded by ground foil on all sides, to guard against
capacitive coupling from any high-level signals (such as the output). If pins 5 and 6 are not used, they should
be shorted together. If they are connected to a trim-pot, the trim-pot should be located, at most, a few inches
away from the LM111, and the 0.01 μF capacitor should be installed. If this capacitor cannot be used, a
shielding printed-circuit foil may be advisable between pins 6 and 7. The power supply bypass capacitors
should be located within a couple inches of the LM111. (Some other comparators require the power-supply
bypass to be located immediately adjacent to the comparator.)
6. It is a standard procedure to use hysteresis (positive feedback) around a comparator, to prevent oscillation,
and to avoid excessive noise on the output because the comparator is a good amplifier for its own noise. In
the circuit of Figure 21, the feedback from the output to the positive input will cause about 3 mV of
hysteresis. However, if RSis larger than 100Ω, such as 50 kΩ, it would not be reasonable to simply increase
the value of the positive feedback resistor above 510 kΩ. The circuit of Figure 22 could be used, but it is
rather awkward. See the notes in paragraph 7 below.
7. When both inputs of the LM111 are connected to active signals, or if a high-impedance signal is driving the
positive input of the LM111 so that positive feedback would be disruptive, the circuit of Figure 20 is ideal.
The positive feedback is to pin 5 (one of the offset adjustment pins). It is sufficient to cause 1 to 2 mV
hysteresis and sharp transitions with input triangle waves from a few Hz to hundreds of kHz. The positive-
feedback signal across the 82Ωresistor swings 240 mV below the positive supply. This signal is centered
around the nominal voltage at pin 5, so this feedback does not add to the VOS of the comparator. As much as
8 mV of VOS can be trimmed out, using the 5 kΩpot and 3 kΩresistor as shown.
8. These application notes apply specifically to the LM111 and LF111 families of comparators, and are
applicable to all high-speed comparators in general, (with the exception that not all comparators have trim
pins).
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Pin connections shown are for LM111H in the LMC0008C hermetic package
Figure 20. Improved Positive Feedback
Pin connections shown are for LM111H in the LMC0008C hermetic package
Figure 21. Conventional Positive Feedback
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Typical Applications
Pin connections shown on schematic diagram and typical applications are for LMC0008C metal can package.
Offset Balancing Strobing
Note: Do Not Ground Strobe Pin. Output is turned off when current
is pulled from Strobe Pin.
Figure 23. Figure 24.
Increasing Input Stage Current Detector for Magnetic Transducer
Note: Increases typical common mode slew from 7.0V/μs to 18V/μs.
Figure 25. Figure 26.
Digital Transmission Isolator Relay Driver with Strobe
*Absorbs inductive kickback of relay and protects IC from severe
voltage transients on V++ line.
Note: Do Not Ground Strobe Pin.
Figure 27. Figure 28.
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Strobing off Both Input and Output Stages
Note:Typical input current is 50 pA with inputs strobed off. Figure 29.
Positive Peak Detector Zero Crossing Detector Driving MOS Logic
*Solid tantalum Figure 30. Figure 31.
Typical Applications
(Pin numbers refer to LMC0008C package)
Zero Crossing Detector Driving MOS Switch 100 kHz Free Running Multivibrator
*TTL or DTL fanout of two
Figure 32. Figure 33.
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10 Hz to 10 kHz Voltage Controlled Oscillator
*Adjust for symmetrical square wave time when VIN = 5 mV
†Minimum capacitance 20 pF Maximum frequency 50 kHz Figure 34.
Driving Ground-Referred Load Using Clamp Diodes to Improve Response
*Input polarity is reversed when using pin 1 as output.
Figure 35. Figure 36.
TTL Interface with High Level Logic
*Values shown are for a 0 to 30V logic swing and a 15V threshold.
†May be added to control speed and reduce susceptibility to noise spikes.
Figure 37.
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Crystal Oscillator Comparator and Solenoid Driver
Figure 38. Figure 39.
Precision Squarer Low Voltage Adjustable Reference Supply
*Solid tantalum
†Adjust to set clamp level *Solid tantalum
Figure 40. Figure 41.
Positive Peak Detector Zero Crossing Detector Driving MOS Logic
*Solid tantalum Figure 42. Figure 43.
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Negative Peak Detector Precision Photodiode Comparator
*Solid tantalum
*R2 sets the comparison level. At comparison, the photodiode has
less than 5 mV across it, decreasing leakages by an order of
magnitude.
Figure 44. Figure 45.
Switching Power Amplifier Switching Power Amplifier
Figure 46. Figure 47.
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REVISION HISTORY SECTION
Released Revision Section Originator Changes
05/09/05 A New Release, Corporate L. Lytle 1 MDS data sheets converted into one Corp.
format data sheet format. MJLM111–X Rev 0D3 will
be archived.
03/26/2013 B All Sections Changed layout of National Data Sheet to TI
format
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PACKAGE OPTION ADDENDUM
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Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead/Ball Finish MSL Peak Temp
(3)
Op Temp (°C) Top-Side Markings
(4)
Samples
JL111BGA ACTIVE TO-99 LMC 8 20 TBD Call TI Call TI -55 to 125 JL111BGA
JM38510/10304BGA Q
ACO
JM38510/10304BGA Q
>T
JM38510/10304BGA ACTIVE TO-99 LMC 8 20 TBD Call TI Call TI -55 to 125 JL111BGA
JM38510/10304BGA Q
ACO
JM38510/10304BGA Q
>T
M38510/10304BGA ACTIVE TO-99 LMC 8 20 TBD Call TI Call TI -55 to 125 JL111BGA
JM38510/10304BGA Q
ACO
JM38510/10304BGA Q
>T
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a
continuation of the previous line and the two combined represent the entire Top-Side Marking for that device.
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Addendum-Page 2
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF LM111JAN, LM111JAN-SP :
•Military: LM111JAN
•Space: LM111JAN-SP
NOTE: Qualified Version Definitions:
•Military - QML certified for Military and Defense Applications
•Space - Radiation tolerant, ceramic packaging and qualified for use in Space-based application
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