SBC558 Semiconductor PNP Silicon Transistor Descriptions * General purpose application * Switching application Features * High voltage : VCEO=-30V * Complementary pair with SBC548 Ordering Information Type NO. Marking Package Code SBC558 SBC558 TO-92 Outline Dimensions unit : mm 3.450.1 4.50.1 4.50.1 2.250.1 2.060.1 14.00.40 0.40.02 1.27 Typ. 2.54 Typ. PIN Connections 1. Collector 2. Base 3. Emitter 0.38 1.200.1 1 2 3 KST-9029-000 1 SBC558 (Ta=25C) Absolute maximum ratings Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -30 V Collector-Emitter voltage VCEO -30 V Emitter-Base voltage VEBO -5 V Collector current IC -100 mA Collector dissipation PC 625 mW Junction temperature Tj 150 C Storage temperature Tstg -55~150 C (Ta=25C) Electrical Characteristics Characteristic Symbol Test Condition Collector-Emitter breakdown voltage BVCEO IC=-1mA, IB=0 Base-Emitter turn on voltage VBE(ON) Base-Emitter saturation voltage Collector-Emitter saturation voltage - - V VCE=-5V, IC=-2mA - - -700 mV VBE(sat) IC=-100mA, IB=-5mA - -900 - mV VCE(sat) IC=-100mA, IB=-5mA - - -650 mV - - -15 nA 110 - 800 - VCB=-5V, IC=-10mA - 150 - MHz Cob VCB=-10V, IE=0, f=1MHz - - 4.5 pF NF VCE=-5V, IC=-200A, f=1KHz,Rg=2K, f=200Hz - - 10 dB ICBO VCB=-35V, IE= 0 DC current gain hFE* VCE=-5V, IC=-2mA Collector output capacitance Noise Figure Unit -30 Collector cut-off current Transition frequency Min. Typ. Max. fT * : hFE rank / A : 110 ~ 220, B : 200 ~ 450, C : 420 ~ 800 KST-9029-000 2 SBC558 Electrical Characteristic Curves Fig. 1 PC-Ta Fig. 3 IC-VCE Fig. 2 IC-VBE Fig. 4 hFE-IC Fig. 5 VCE(sat)-IC KST-9029-000 3