NSVMMBT5087LT3G - ON Semiconductor

October, 2016 − Rev. 6 1Publication Order Number:

MMBT5087LT1/D

MMBT5087L

Low Noise Transistor

PNP Silicon

Features

•NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage VCEO −50 Vdc

Collector−Base Voltage VCBO −50 Vdc

Emitter−Base Voltage VEBO −3.0 Vdc

Collector Current − Continuous IC−50 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR−5 Board,

(Note 1) TA = 25°C

Derate above 25°C

PD225

1.8 mW

mW/°C

Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W

Total Device Dissipation Alumina

Substrate, (Note 2) TA = 25°C

Derate above 25°C

PD300

2.4 mW

mW/°C

Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W

Junction and Storage Temperature TJ, Tstg −55 to +150 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be af fected.

1. FR−5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

SOT−23 (TO−236)

CASE 318

STYLE 6

Device Package Shipping†

ORDERING INFORMATION

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer t o our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

MMBT5087LT1G,

NSVMMBT5087LT1G SOT−23

(Pb−Free) 3,000 / Tape &

Reel

MMBT5087LT3G,

NSVMMBT5087LT3G SOT−23

(Pb−Free) 10,000 / Tape &

Reel

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

2Q M G

2Q = Device Code

M = Date Code*

G= Pb−Free Package

(Note: Microdot may be in either location)

MARKING DIAGRAM

COLLECTOR

BASE

EMITTER

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MMBT5087L

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(IC = −1.0 mAdc, IB = 0) V(BR)CEO −50 − Vdc

Collector−Base Breakdown Voltage

(IC = −100 mAdc, IE = 0) V(BR)CBO −50 − Vdc

Collector Cutoff Current

(VCB = −10 Vdc, IE = 0)

(VCB = −35 Vdc, IE = 0)

ICBO −

−−10

−50

nAdc

ON CHARACTERISTICS

DC Current Gain

(IC = −100 mAdc, VCE = −5.0 Vdc)

(IC = −1.0 mAdc, VCE = −5.0 Vdc)

(IC = −10 mAdc, VCE = −5.0 Vdc)

hFE 250

250

800

−

Collector−Emitter Saturation Voltage

(IC = −10 mAdc, IB = −1.0 mAdc) VCE(sat) −−0.3 Vdc

Base−Emitter Saturation Voltage

(IC = −10 mAdc, IB = −1.0 mAdc) VBE(sat) − 0.85 Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain — Bandwidth Product

(IC = −500 mAdc, VCE = −5.0 Vdc, f = 20 MHz) fT40 − MHz

Output Capacitance

(VCB = −5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo − 4.0 pF

Small−Signal Current Gain

(IC = −1.0 mAdc, VCE = −5.0 Vdc, f = 1.0 kHz) hfe 250 900 −

Noise Figure

(IC = −20 mAdc, VCE = −5.0 Vdc, RS = 10 kW, f = 1.0 kHz)

(IC = −100 mAdc, VCE = −5.0 Vdc, RS = 3.0 kW, f = 1.0 kHz)

NF −

−2.0

2.0

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

TYPICAL NOISE CHARACTERISTICS

(VCE = − 5.0 Vdc, TA = 25°C)

Figure 1. Noise Voltage

f, FREQUENCY (Hz)

5.0

7.0

3.0

Figure 2. Noise Current

f, FREQUENCY (Hz)

1.0

10 20 50 100 200 500 1.0k 2.0k 5.0k 10k

1.0

7.0

5.0

3.0

2.0

1.0

0.7

0.5

0.3

0.1

BANDWIDTH = 1.0 Hz

RS ≈ 0

IC = 10 mA

100 mA

en, NOISE VOLTAGE (nV)

In, NOISE CURRENT (pA)

30 mA

BANDWIDTH = 1.0 Hz

RS ≈∞

IC = 1.0 mA

300 mA

100 mA

30 mA

10 mA

10 20 50 100 200 500 1.0k 2.0k 5.0k 10k

2.0 1.0 mA

0.2

300 mA

MMBT5087L

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NOISE FIGURE CONTOURS

(VCE = − 5.0 Vdc, TA = 25°C)

500k

100

200

500

1.0k

10k

5.0k

20k

50k

100k

200k

2.0k

1.0M

500k

100

200

500

1.0k

10k

5.0k

20k

50k

100k

200k

2.0k

1.0M

Figure 3. Narrow Band, 100 Hz

IC, COLLECTOR CURRENT (mA)

Figure 4. Narrow Band, 1.0 kHz

IC, COLLECTOR CURRENT (mA)

0.5 dB

BANDWIDTH = 1.0 Hz

RS, SOURCE RESISTANCE (OHMS)

Figure 5. Wideband

IC, COLLECTOR CURRENT (mA)

10 Hz to 15.7 kHz

RS, SOURCE RESISTANCE (OHMS)

Noise Figure is Defined as:

NF +20 log10ƪen2)4KTRS)In2RS2

4KTRSƫ1ń2

= Noise V oltage of the Transistor referred to the input. (Figure 3)

= Noise Current of the T ransistor referred to the input. (Figure 4)

= Boltzman’s Constant (1.38 x 10−23 j/°K)

= Temperature of the Source Resistance (°K)

= Source Resistance (Ohms)

1.0 dB

2.0 dB

3.0 dB

20 30 50 70 100 200 300 500 700 1.0k 10 20 30 50 70 100 200 300 500 700 1.0k

500k

100

200

500

1.0k

10k

5.0k

20k

50k

100k

200k

2.0k

1.0M

20 30 50 70 100 200 300 500 700 1.0k

BANDWIDTH = 1.0 Hz

5.0 dB

0.5 dB

1.0 dB

2.0 dB

3.0 dB

5.0 dB

0.5 dB

1.0 dB

2.0 dB

3.0 dB

5.0 dB

MMBT5087L

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TYPICAL STATIC CHARACTERISTICS

Figure 6. Collector Saturation Region

IC, COLLECTOR CURRENT (mA)

1.4

Figure 7. Collector Characteristics

IC, COLLECTOR CURRENT (mA)

V, VOLTAGE (VOLTS)

1.0 2.0 5.0 10 20 50

1.6

100

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE(on) @ VCE = 1.0 V

*qVC for VCE(sat)

qVB for VBE

0.1 0.2 0.5

Figure 8. “On” Voltages

IB, BASE CURRENT (mA)

0.4

0.6

0.8

1.0

0.2

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

0.002

TA = 25°C

IC = 1.0 mA 10 mA 100 mA

Figure 9. Temperature Coefficients

50 mA

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

100

IC, COLLECTOR CURRENT (mA)

TA = 25°C

PULSE WIDTH = 300 ms

DUTY CYCLE ≤ 2.0%

IB = 400 mA

350 mA

300 mA250 mA

200 mA

*APPLIES for IC/IB ≤ hFE/2

25°C to 125°C

-55°C to 25°C

25°C to 125°C

-55°C to 25°C

0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 5.0 10 15 20 25 30 35 40

1.2

1.0

0.8

0.6

0.4

0.2

02.4

0.8

1.6

0.8

1.0 2.0 5.0 10 20 50 100

0.1 0.2 0.5

V, TEMPERATURE COEFFICIENTS (mV/ C)°θ

150 mA

100 mA

50 mA

MMBT5087L

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TYPICAL DYNAMIC CHARACTERISTICS

C, CAPACITANCE (pF)

Figure 10. Turn−On Time

IC, COLLECTOR CURRENT (mA)

500

Figure 11. Turn−Off Time

IC, COLLECTOR CURRENT (mA)

2.0 5.0 10 20 30 50

1000

Figure 12. Current−Gain — Bandwidth Product

IC, COLLECTOR CURRENT (mA)

Figure 13. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

3.01.0

500

0.5

t, TIME (ns)

f, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)

5.0

7.0

100

300

7.0 70 100

VCC = 3.0 V

IC/IB = 10

TJ = 25°C

td @ VBE(off) = 0.5 V

100

200

300

500

700

- 2.0

-1.0

VCC = - 3.0 V

IC/IB = 10

IB1 = IB2

TJ = 25°C

100

200

300

0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50

TJ = 25°C

VCE = 20 V

5.0 V

1.0

2.0

3.0

5.0

7.0

0.1 0.2 0.5 1.0 2.0 5.0 10 20 500.05

Cib

Cob

200

- 3.0 - 5.0 - 7.0 - 20

-10 - 30 - 50 - 70 -100

TJ = 25°C

MMBT5087L

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Figure 14. Thermal Response

t, TIME (ms)

1.0

0.01

r(t) TRANSIENT THERMAL RESISTANCE

(NORMALIZED)

0.01

0.02

0.03

0.05

0.07

0.1

0.2

0.3

0.5

0.7

0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k

D = 0.5

0.2

0.1

0.05

0.02

0.01 SINGLE PULSE

DUTY CYCLE, D = t1/t2

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1 (SEE AN569/D)

ZqJA(t) = r(t) •RqJA

TJ(pk) − TA = P(pk) ZqJA(t)

P(pk)

FIGURE 16

TJ, JUNCTION TEMPERATURE (°C)

104

-4

IC, COLLECTOR CURRENT (nA)

Figure 15. Typical Collector Leakage Current

DESIGN NOTE: USE OF THERMAL RESPONSE DATA

A train of periodical power pulses can be represented by

the model as shown in Figure 16. Using the model and the

device thermal response the normalized effective transient

thermal resistance of Figure 14 was calculated for various

duty cycles.

To find ZqJA(t), multiply the value obtained from Figure

14 by the steady state value RqJA.

Example:

Dissipating 2.0 watts peak under the following conditions:

t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2)

Using Figure 14 at a pulse width of 1.0 ms and D = 0.2, the

reading of r(t) is 0.22.

The peak rise in junction temperature is therefore

DT = r(t) x P(pk) x RqJA = 0.22 x 2.0 x 200 = 88°C.

For more information, see ON Semiconductor Application

Note AN569/D, available from the Literature Distribution

Center or on our website at www.onsemi.com.

10-2

10-1

100

101

102

103

-2

0 + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160

VCC = 30 V

ICEO

ICBO

AND

ICEX @ VBE(off) = 3.0 V

MMBT5087L

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PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AR

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.

MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF

THE BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,

PROTRUSIONS, OR GATE BURRS.

SOLDERING FOOTPRINT*

VIEW C

0.25

SEE VIEW C

DIM

AMIN NOM MAX MIN

MILLIMETERS

0.89 1.00 1.11 0.035

INCHES

A1 0.01 0.06 0.10 0.000

b0.37 0.44 0.50 0.015

c0.08 0.14 0.20 0.003

D2.80 2.90 3.04 0.110

E1.20 1.30 1.40 0.047

e1.78 1.90 2.04 0.070

L0.30 0.43 0.55 0.012

0.039 0.044

0.002 0.004

0.017 0.020

0.006 0.008

0.114 0.120

0.051 0.055

0.075 0.080

0.017 0.022

NOM MAX

2.10 2.40 2.64 0.083 0.094 0.104

HE0.35 0.54 0.69 0.014 0.021 0.027

c0 −−− 10 0 −−− 10

T°°°°

TOP VIEW

SIDE VIEW END VIEW

2.90

0.80

DIMENSIONS: MILLIMETERS

0.90

PITCH

3X 0.95

RECOMMENDED

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

STYLE 6:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

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