25C D) MM 46235605 0004472 J MMSIEG - T~ 33-097 NPN Silicon High Voltage Switching Transistors BUX 86 BUX 87 SIEMENS AKTIENGESELLSCHAF BUX 86 and BUX 87 are NPN silicon epibase power switching transistors in TO 126 plastic package (12 A 3 DIN 41869). They are outstanding for their short switching times and high dielectric strength and are particularly suitable for use in switching power supplies of TV sets. The collector is electrically connected to the metallic mounting area. Type | Ordering code BUX 86 Q68000-A3870 BUX 87 Q68000-A5167 TET 4 -P Ro Approx. weight 0,5 g Dimensions inmm Maximum ratings BUX 86 BUX 87 Coliector-emitter voltage Vees 800 1000 Vv Collector-emitter voltage Vceo 400 450 Vv Collector current Ie 0.5 0.5 A Collector peak current (tp $2 ms) lou 1.0 1.0 A Base current Ih 0.2 0.2 A Base peak current Tam 0.3 0.3 A Negative base peak current at turning off -lgm 0.3 0.3 A Storage temperature range Tatg 65 to +150 C Junction temperature Tj 150 150 C Total power dissipation (Toase S$ 60C) Prot - 20 20 Ww Therma! resistance Junction to mounting area Rinuc $4.5 $4.5 K/W 918 - 2234 F-03 25C D MM 8235b05 0004873 S MMSIEG ~25C 04873 OD STEMENS AKTIENGESELLSCHAF Static characteristics (T,,, = 25C) Collector-emitter breakdown voltage (Ig = 100 mA; Jg = 0; L = 25 mH) Collector cutoff current (Vces = 800 V) (Vces = 800 V; T; = 150C) (Vcgs = 1000 V) (Voces = 1000 V; 7] = 150C) Emitter cutoff current (Vego = 5 V) DC current gain (Vee = 5 V; Ig = 50 mA) Collector-emitter saturation voltage (Ic = 100 mA; Jp = 10 mA) (J = 200 mA; Jg = 20 mA) Base-emitter saturation voltage (Ig = 200 mA; Ig = 20 mA) Dynamic characteristics (Tamp = 25C) Transition frequency (Vce = 10 V; Ie = 50 mA; f = 1 MHz) Swicthing times (Voc = 260 V; Ig = 200 mA; Ig = 20 mA; ~Iy = 40 mA) Turn-on time Storage time Fall time? 1) at Tease = 95C is tf 51.4 ps 2235 F-04 7-33-07 2. BUX 86 BUX 87 BUX 86 BUX 87 lees <0.1 - mA Ices <1 - mA legs - <0.1 mA lees - <1 mA lego <1 <1 mA Ace 50 50 - Veesat <1.6 <1.5 Vv Veesat <3 <3 Vv Voesat <1 <1 Vv fr 20 20 MHz ton Q.25 (<0.5) | 0.25 (<0.5) | us ts 2 (<3.5) 2 (<3.5) ps te 0.4 0.4 ys 919 25C D MM 8235605 0004874 7 MEBSIEG 25C 04874 D-T+33-09 BUX 86 SIEMENS AKTIENGESELLSCHAF Total perm. power dissipation versus temperature We Prot =f (Tease) 30 0 50 100 150 C > Tease Permissible operating range Ig = f (Veg): Tease % 60C 1 BUX to! 10? 40? oo V Nee 920 2236 F-05 BUX 87 Permissible pulse load K Zac = f(t); = parameter W 10 2thic rly 10? wo? 0610? 0's! 10? ms } Permissible operating range Ig = t (Veli Tease 60C mA 3 BUX 87 10 10? a0? we e5C D MM 4235605 0004875 9 MMSIEG 25C 04875 0-F- B3-OF BUX 86 oo BUX 87 STEMENS AKTIENGESELLSCHAF BC current gain hre_ = f (/c} Vee = & V; Tamp = 25C 10! 10? 10? 10mA _ ], Test circuit for breakdown voltage Vigaicro for: Yericeo +50V 100 ta 2002 hor. Oscillograph | : vert. ~N 30 0 60H2 | 921 2237 F~06 25C D MB 6235b05 O004d7b O MMSTEG 25C 04876 DT 30 1G BUX 86 BUX 87 STEMENS AKTIENGESELLSCHAF Test circuit for switching times % #.30ns I 90 fae aaa ig is Ba t whens | Lf ~~~ Too % 9+---- #7 ~~ 7 Aeon I 10+---1}-------4 ~th iS on > fh 922 2238 F-07 **