enn eee TELEDYNE COMPONENTS LTORAZ SEMICONDUCTOR FEATURES @ Low Transfer Capacitance, c,,, 0.3 pF typ. 24 D M@@ 8917602 OUObL4YSbL 2 a $ST211, SST213 SST215 T- 3se25 N-CHANNEL ENHANCEMENT-MODE D-MOS FET SWITCHES Mi High Speed Switching, t,,<2nSec. m@ Surface Mount Package ORDERING INFORMATION 1 APPLICATIONS @ +30V Switch Driver - SST 211 Mm +10V Analog Switch - SST 21 m +5V Analog Switch - SST 213 H Sample & Hold @ Multiplexers ABSOLUTE MAXIMUM RATINGS (T, = +25C unless otherwise noted) PARAMETER SST211 SST213 SST215 UNIT BREAKDOWN VOLTAGES Vos 430 +10 +20 Vdc [, Continous Drain Current........... 50mA Veo +10 +10 +20 Vde P, PowerDissipaton Ve +30 +15 +25 Vde (at orbelow T, = +25C)........, 360 mW ve +15 +15 +25 Vde Linear Derating Factor.......... 3.6mwr as -15 15 ~25 Vde + Operating Junction T t 425 425 430 Vde 1 Operating Junction Temperature Vea ~0.3 -~0.3 -0.3 Vde Range... secre cc ee ee eens -55 to +125C +25 +25 +30 Vde TT, Storage Temperature Range .. -55 to +150C Vep ~30 -15 ~25 Vde +25 +25 +30 Vde Drain PACKAGE DIMENSIONS (4) SOT-143 | | Body (1) ) See Package 24 Source (2) 3-123 0-88-6 4257 c=-10 TELEDYNE COMPONENTS od che Dp mm 8917602 OOOL4YS? 4_ me a 4S SEMICONDUCTOR 7-35-28 SST211, SST213, SST215 ELECTRICAL CHARACTERISTICS (1, = +25C unless otherwise noted) SsT211 $5213 | SST215 TEST # PARAMETER MIN }TYP | MAX |MIN| TYP | MAX |MIN | TYP | MAX | UNIT CONDITIONS 1 BV is Drain-Source 30 | 35 Ip= 10yA Breakdown Voltage Vag = Vag= 0 2 10 | 25 10 | 25 20 | 25 l= 10nA Vog= Vag = -8V a BV gp Source-Drain 10 10 20 | 22 Vv I= 10nA Breakdown Voltage Veo = Veo = SV 4 BVp, Drain-Substrate 15 15 25 | 40 lp= 10NA, Vg, = 0 Breakdown Voltage Source OPEN 5 1 5| BVeg Source-Substrate 15 15 25 | 40 ig= 10HA, Vog = 0 E Breakdown Voltage DralnOPEN 6 |b lyon Drain-Source 02 | 10 02 | 10 Vig= 10V | VageVgg 7 OFF Current 0.2 | 10 TA | Vig =20V | =-5V 8] | lesen Source-Drain 0.6 | 10 0.6 } 10 Veg = 10V | Ven=Vp9 9 OFF Current 06 | 10 Voq = 20V | =-5V 10} | has Gate-Body 10 10 HA | Veg= 25V | Vig=Vsg 1 Leakage Current 10 Veg 2 30V | =0 121 | Voge Gate Threshold 0.5 51.0 | 2.0 | 0.1 20 {01)10 )20 ) V Vog = Veg: Voltage [p= THA, Veg #0 13] | Fogg Drain-Source = (1) 50 | 70 50 | 70 50 | 70 | ohms | V,,=5V | I,=imA 14 ON Resistance 30 | 45 3 | 4 3 | 4 Vog= TOV | Veg=0 1} Ig, Common-Source(1) | 10 | 12 10 | 12 10 | 12 mmhos} V,.= 10V,|, = 20mA Foward Transcond. f= 1KHz,V.,=0 16} [Const Gate Node 24 | 35 24 | 35 24 | 35 Vig = 10V Capacitance 17] | Gaasy DrainNode 13 | 15 13 | 16 13 | 15 Veg = Veg = -15V g Capacitance pF 18 S | cen Source Node 35 | 4.0 35 | 40 35 | 40 f= 1MHz 2 Capacitance 19 Cay Reverse Transfer 0.3 | 0.5 03 | 05 0.3 | 05 Capacitance ee Tum ON Delay 0.7 | 1.0 07 | 10 0.7 | 10 V0 = BV. Vegan 10V Time nSec al t Rise Time 08 | 1.0 08 | 10 08 | 1.0 Ri, = 680Q, Ry = 512 22 tn Tum OFF Time 10 10 10 Note 1: Pulse Test, 801 Sec, 1% Duty Cycle Typical Performance Charactarlstics: See $D210-215 Series 3-124