A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C
NONE
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCEO IC = 5.0 mA 20 V
BVCBO IC = 1.0 mA 30 V
BVEBO IC = 100 µA 3.5 V
ICBO VCB = 10 V 50 µA
IEBO VEB = 3.5 V 100 µA
hFE VCE = 5.0 V IC = 50 mA 50 300 ---
VCE(SAT) IC = 50 mA IB = 10 mA 100 V
ft VCE = 14 V IC = 90 mA f = 300 MHz 3.0 GHz
GUmax
MAG
|S21|2
VCC = 14 V IC = 90 mA Pout = 1.0 W
f = 300 MHz
10
11.5
11.7
11.13
dB
dB
dB
NPN SILICON HIGH FREQUENCY TRANSISTOR
MRF1001A
DESCRIPTION:
The ASI MRF1001A is a High
Frequency Transistor Designed for
Amplifier and Oscillator Applications.
MAXIMUM RATINGS
IC 200 mA
VCE 20 V
PDISS 1.0 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG -65 °C to +200 °C
θJC 175 °C/W
PACKAGE STYLE TO-39
1 = Emitter 2 = Base
3 = Collector
