TEXAS INSTR {OPTO? b2 DEpsci72, oosnde4 7 8961726 TEXAS INSTR COPTO) . 62 36924 bp | -~ 2 oo mies er, TIP 145, TIP 146, TIP147 : . P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS REVISED OCTOBER 1984 Designed for Complementary Use With TIP140, 11P141, T1IP142 T-33-31 @ 125 W at 25C Case Temperature mo : @ 10A Rated Collector Current @ Minhee of 1000 at4V,5A @ 100 mJ Reverse Energy Rating ee : device schematic TO-218AA PACKAGE : c k we ee ee ee eee ee fee ee ee I r | EMITTER ( COLLECTOR 8 { BASE , 1 i i t ! t . -SStL=S ----) THE COLLECTOR IS IN ELECTRICAL CONTACT WITH THE MOUNTING TAB absolute maximum ratings at 25C case temperature (unless otherwise noted} TIP145 TIP146 TIP147 current current current areas at case temperature at case temperature at temperature energy storage temperature range mm case 1, This value applies for ty<0.3 ms, duty cycle < 10%. 2. Derate linearly to 150C case temperature at the rate of 1 W/C or refer to Dissipation Derating Curve, Figure 9. 3. Derate linearly to 150C free-air temperature at the rate of 28 mW/C or refer to Dissipation Derating Curve, Figure 10. 4. This rating is based on the capability of the transistors to operate safely in the circuit of Figure 2.. = 20 mH, Rep2 = 1009, Vep2 = OV.Rg = 0.19, Voce = 20V, Energy = 1921/2. NOTES: n 2 > Oo Q. - wy TEXAS 5-183 INSTRUMENTS POST OFFICE SOX 225012 DALLAS, TEXAS 75265TEXAS INSTR LOPTO? b2 pe acei726 oozes 9 ioe ( 8961726 TEXAS INSTR (COPTO? a 62C 36925 / i T-33-31 I TIP145, TIP146, TIP 147 . i P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS . ' 5 electrical characteristics at 25C case temperature : PARAMETER TEST CONDITIONS P1485 rip146 P14? UNIT : MIN TYP MAX [{ MIN TYP MAX | MIN TYP MAX EB = , cE= -4V, hre = 5 = 6 See Notes 5 and 6 VBE see Notes 6 and 6 Vee tcat) Seb Note Sand 6 See Notes 5 and 6 VE = See Notes 5 and 6 NOTES: 5. These parameters must be measured using pulse techniques, ty = 300 ps, duty cycle < 2%. 6. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts and located within 3,2 mm (0.125 inch) from the device body. t _ resistive-load switching characteristics at 25 case temperature PARAMETER TEST CONDITIONS t MIN TYP MAX | UNIT ton fc = -10A, Igp1 = 40mA, Ig2 = 40mA, 0.9 toft VBE(off) = 4.2V, Ay = 32, See Figure 1 i us T Voltage and current values are nominal, exact values vary slightly with transistor parameters. G dil S8DINO : 128 Tf 5-184 . TExAs ay INSTRUMENTS POST OFFICE BOX 225012 @ DALLAS, TEXAS 78265TEXAS INSTR {OPTO} be ve ff s9un726 QO3b4eb O i 8961726 TEXAS INSTR (OPTO) 62C 36926 D } I _ TIP145, TIP146, TIP147 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS PARAMETER MEASUREMENT INFORMATION T-33-31 i INPUT . I MONITOR i woe. Pee . 2 { | 1N914 1N914 1N914 ' 4 270 pF L Oe ee . sons Reg2 = 1502 RAL =32 : Veen , + [ = Vep2"42V eH _ . . = Vec=30V | Vapi 44V a I ADJUST FOR Von = 42V AT + ' INPUT MONITOR TEST CIRCUIT INPUT 4.2V 10% MoniToR OY ~~ oom ms Tom Von=-42 -+ 90% ; OUTPUT 90% i MONITOR I : . . 10% VOLTAGE WAVEFORMS i NOTES: A. Vgen is a 30-V pulse into a 502 termination. B. The Vgen waveform is supplied by a generator with the following characteristics: tr < 150s, te< 15ns, Zoyg = 502, tw = 20us, duty cycle < 2%. , C. Waveforms are monitored on an oscilloscope with the following characteristics: t,< 15 ns, Rip > 10 MQ, Cin < 11.5 pF. D. Resistors must be noninductive types. E Thed-c power supplies may require additional bypassing in order to minimize ringing. 2 > o a a = FIGURE 1. RESISTIVE-LOAD SWITCHING a XAS ; INSTRUMENTS 5-185 POST OFFICE BOX 225012 DALLAS, TEXAS 75265 >TEXAS INSTR {OPT | 0} be Def 6de1726 ooanse? a | "8961726 TEXAS INSTR (OPTO) 2c 36927 po | pe aia ee TIP145, TIP146, TIP147 - T~33-31 ' P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS a = in, ~ PARAMETER MEASUREMENT INFORMATION | rH ) Vee MONITOR i . . 9) Vce ; _ : Rept pt 20 mH : a 2NG128 t INPUT ; = Vec=20V | I MONITOR = Van} = 10V Rg=012 i - TEST CIRCUIT ems - : . > thee Note Al . . t 1 . sv ---t INPUT | VOLTAGE tet 100 ms et it 1 on! | | COLLECTOR 1 i CURRENT I] I 3164 -+ | Bint ; ot i ot ee 1 ti t i ~ Vee(sat) - 4 4t-----~ --- o 20V ' I i | | oO COLLECTOR ' | : 2 VOLTAGE ' So Vigricer --1+--4&4--------- -- j oO VOLTAGE AND CURRENT WAVEFORMS , NOTE A: Input pulse duration is increased until Icny = 3.16A. FIGURE 2. INDUCTIVE-LOAD SWITCHING : . i 12g 5-186 TEXAS wy INSTRUMENTS POST OFFICE BOX 225012 DALLAS, TEXAS 75265 | wee ee ee we ge eee ee ee iedTEXAS INSTR {f0PTO} bo DEP S9b1726 gosb428 y Z ( 8961726 TEXAS INSTR COPTO) oe 62C 36928 D ~ Beet " TIP145, TIP146, TIP147 . P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS: 7-33-31 _, STATIC FORWARD CURRENT TRANSFER RATIO . PASE-EMITTER VOLTAGE ' vs | Vv COLLECTOR CURRENT CASE TEMPERATURE i 4k -4 i = 3.6 | VCE~-4V i 3 ~*" T See Notes 5 and ! 5 = 100C > z p32 ic=10A o ee = Tce = 25C ~2.8 c 1k $ -24b ; 5 ; 2 Te = -55C - 72 5 4 = 400 g 16 a a r p 712 B-08 ue Voe=-4V -0.4 t ms See Notes 5 and 6 r = 100 o = 0.4 1 4 10 . -75 -25 0 25 75. 125 175 te Collector Current A Tc Case Temperature C I : FIGURE 3 . FIGURE 4 . | SMALL-SIGNAL COMMON-EMITTER : COLLECTOR-EMITTER SATURATION VOLTAGE FORWARD CURRENT TRANSFER RATIO vs "vs > CASE TEMPERATURE . : FREQUENCY . 4 3 : g 6 Voce =-10V i $s % Ic=-1A t > = = s ; =40mA,!c=-10A E To = 25C i E = : 3 i & =-10mA,Ic=-5A 5 @ i % 2 2 | 3 s =-2mA,ic=-1A i 2 7 QO. | z o. = = | 8 @ Fe ! 1 = : a E 3. aw 2 1 - B -0.4 & > ~75 -25 0 25 75 125 175 < 1 4 . 10 : Tc Case Temperature C . f Frequency MHz i | FIGURE 5 FIGURE 6 NOTES: 5. These parameters must be measured using pulse techniques, ty = 300 ps, duty cycle < 2%. : 6. These parameters are measured with voltage-sensing cantacts separate from the current-carrying contacts and located . > within 3,2 mm (0,125 inch) from the device body. 8 wy TEXAS 5-187 INSTRUMENTS POST OFFICE BOX 225012 @ DALLAS, TEXAS 75265 I TEXAS INSTR {0PTO} b2 de fadwi72b ooans29 b 8961726 TEXAS INSTR COPTO) 62C_ 36929 D T-33-3 TIP145, TIP146, TIP147 1 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS ~- MAXIMUM SAFE OPERATING AREA MAXIMUM COLLECTOR CURRENT vs COLLECTOR-EMITTER VOLTAGE 20 DC Operation To <25C 10 Iq Maximum Collector Current - A MAXIMUM COLLECTOR CURRENT vs UNCLAMPED INDUCTIVE LOAD 40 i Vee =20V i Rep = 100 2 Tc = 28C See Figure 2 t = S i Maximum Collector Current A TIP145 - 0.4 TiP147 See 0.2 -1 -10 40 100 400 0.4 #61 4 10 40 100 400 VceE Collector-Emitter Voltage V L Unclamped Inductive Load mH FIGURE 7 FIGURE 8 NOTE 7: Above this point the safe operating area has not been defined. | THERMAL INFORMATION CASE TEMPERATURE FREE-AIR TEMPERATURE DISSIPATION DERATING CURVE DISSIPATION DERATING CURVE z 150 FF 4 c c Rs s 2125 Bee 3 B = a 5 3 g g 5 100 gos oO 3 Rec S1CW o s 3 75 g 2 9 e 2 ao a 50 5 1.5 E 51 25 E i 5 3 0.5 7 7 0 &o o 2 50 75 100 125 150 0 2 80 75 100 125 150 ToCase Temperature"C TaFree-Air TemperatureC FIGURES FIGURE 10 wy 124 i 5-188 TEXAS INSTRUMENTS POST OFFICE BOX 226012 @ DALLAS, TEXAS 75265 * Sa jal