1N5817 thru 1N5819 REVERSE VOLTAGE - 20 to 40 Volts FORWARD CURRENT - 1.0 Amperes SCHOTTKY BARRIER RECTIFIERS DO- 41 FEATURES Metal-Semiconductor junction with gard ring Epitaxial construction Low forward voltage drop High current capability 1.0(25.4) MIN. The plastic material carries UL recognition 94V-0 .034(0.9) DIA .028(0.7) For use in low vlotage, high frequency inverters, free wheeling, and polarity protection applications .205(5.2) MAX .107(2.7) DIA .080(2.0) MECHANICAL DATA 1.0(25.4) MIN. Case: JEDEC DO-41 molded plastic Polarity: Color band denotes cathode Weight: 0.012 ounces , 0.34 grams Mounting position: Any Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 ambient temperature unless otherwise specified. Single phase, half wave ,60Hz, resistive or inductive load. For capacitive load, derate current by 20% CHARACTERISTICS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current @TA =75 1N5817 SYMBOL 1N5818 1N5819 UNIT VRRM 20 30 40 V VRMS 14 21 28 V VDC 20 30 40 V I(AV) 1.0 A IFSM 40 A Peak Forward Surage Current 8.3ms Single Half Sine-Wave Super Imposed on Rated Load(JEDEC Method) Maximum Forward Voltage at 1.0A DC VF 0.450 0.550 0.600 V Maximum Forward Voltage at 3.0A DC VF 0.750 0.875 0.900 V Maximum DC Reverse Current @TJ=25 at Rated DC Bolcking Voltage @TJ=100 Typical Junction Capacitance (Note1) Typical Thermal Resistance (Note2) Operating Temperature Range Storage Temperature Range 1.0 IR 10 mA CJ 110 pF RJA 80 /W TJ -55 to +150 TSTG -55 to +150 NOTES: 1.Measured at 1.0 MHz and applied reverse voltage of 4.0V DC 2.Thermal resistance junction to ambient, ~ 145 ~ RATING AND CHARACTERTIC CURVES 1N5817 thru 1N5819 FIG. 1 - FORWARD CURRENT DERATING CURVE FIG. 2 - MAXIMUM NON-REPETITIVE SURGE CURRENT PEAK FORWARD SURGE CURRENT, (AMPERES AVERAGE FORWARD CURRENT AMPERES 1.0 0.8 0.6 0.4 0.2 SINGLE PHASE HALF WAVE 60Hz RESISTIVE OR INDUCTIVE LOAD 0 25 50 75 100 125 150 40 30 20 10 PULSE WIDTH 8.3mS SINGLE HALF-SINE-WAVE (JEDEC METHOD) 0 175 1 2 AMBIENT TEMPERATURE () 10 20 50 100 NUMBER OF CYCLES AT 60Hz FIG.4-TYPICAL FORWARD CHARACTERISTICS FIG.3 - TYPICAL JUNCTION CAPACITANCE 1000 10 INSTANTANEOUS FORWARD CURRENT, (A) CAPACITANCE, (pF) 5 100 T J= 25C f = 1 MHz 1N5817 1N5819 1N5818 1.0 T J = 25C PULSE WIDTH 300us 0.1 1 1 4 10 0 100 0.2 0.4 0.6 0.8 1.0 INSTANTANEOUS FORWARD VOLTAGE, (VOLTS) REVERSE VOLTAGE, (VOLTS) ~ 146 ~ 1.2