BC846BLP4 65V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Low Collector-Emitter Saturation Voltage, VCE(SAT) Ultra-Small Leadless Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Note 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: X2-DFN1006-3 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - NiPdAu, Solderable per MIL-STD-202, Method 208 e4 Weight: 0.0009 grams (Approximate) X2-DFN1006-3 C B B C E E Device Symbol Bottom View Top View Device Schematic Ordering Information (Note 4) Part Number BC846BLP4-7B Notes: Marking 3S Reel Size (in) 7 Tape Width (mm) 8 Quantity per Reel 10,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information 3S 3S = Product Type Marking Code Top View Bar Denotes Base and Emitter Side BC846BLP4 Document number: DS35751 Rev. 3 - 2 1 of 7 www.diodes.com September 2017 (c) Diodes Incorporated BC846BLP4 Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Peak Collector Current Peak Emitter Current Symbol VCBO VCEO VEBO IC ICM IEM Value 80 65 6 100 200 200 Unit V V V mA mA mA Symbol Value 0.46 1 272 120 110 -55 to +150 Unit Thermal Characteristics Characteristic Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Leads Operating and Storage Temperature Range (Note 5) (Note 6) (Note 5) (Note 6) (Note 7) PD RJA RJL TJ, TSTG W C/W C/W C ESD Ratings (Note 8) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Notes: Symbol ESD HBM ESD MM Value 4000 200 Unit V V JEDEC Class 3A B 5. For a device surface mounted on minimum recommended pad layout FR-4 PCB with single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. The entire exposed collector pad is attached to the heatsink. 6. Same as Note 5, except device is surface mounted on 25mm X 25mm collector pad heatsink with 1oz copper. 7. Thermal resistance from junction to solder-point (at the end of the collector lead). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. BC846BLP4 Document number: DS35751 Rev. 3 - 2 2 of 7 www.diodes.com September 2017 (c) Diodes Incorporated BC846BLP4 Thermal Characteristics r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 RJA(t) = r(t) * RJA RJA = 272 272 /W C/W Duty Cycle, D = t1/ t2 D = 0.005 D = Single Pulse 0.001 0.000001 0.0001 0.01 1 t1, PULSE DURATION TIME (sec) Fig. 1 Transient Thermal Resistance 10,000 0.5 Single Pulse R JA = 272C/W R JA(t) = r(t) * R JA TJ - T A = P * R JA(t) 100 PD, POWER DISSIPATION (W) P(PK), PEAK TRANSIENT POIWER (W) 1,000 100 10 1 0.0001 0.01 1 100 10,000 t1, PULSE DURATION TIME (sec) Fig. 2 Single Pulse Maximum Power Dissipation Document number: DS35751 Rev. 3 - 2 0.3 0.2 3 of 7 www.diodes.com RJA = 272C/W 0.1 0 0.1 1E-06 BC846BLP4 0.4 0 50 100 150 200 TA, AMBIENT TEMPERATURE ( ) (C) Fig. 3 Power Dissipation vs. Ambient Temperature September 2017 (c) Diodes Incorporated BC846BLP4 Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 9) Emitter-Base Breakdown Voltage Collector Cutoff Current Symbol Min Typ Max Unit BVCBO BVCEO BVEBO ICES 80 65 6 Collector Cutoff Current ICBO 15 15 5.0 V V V nA nA A IC = 100A, IE = 0 IC = 10mA, IB = 0 IE = 100A, IC = 0 VCE = 65V VCB = 40V VCB = 30V, TA = +150C ON CHARACTERISTICS (Note 9) DC Current Gain hFE 200 VCE(SAT) Base-Emitter Saturation Voltage VBE(SAT) Base-Emitter Voltage VBE(ON) 580 720 870 650 450 250 600 900 700 770 Collector-Emitter Saturation Voltage 270 90 220 VCE = 5V, IC = 2.0mA IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA VCE = 5V, IC = 2.0mA VCE = 5V, IC = 10mA Cibo Cobo fT 100 6.7 1.76 300 pF pF MHz Noise Figure NF 2 10 dB Delay Time Rise Time Storage Time Fall Time tD tR tS tF 11.2 59.7 190.8 108.6 ns ns ns ns SMALL SIGNAL CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Current Gain-Bandwidth Product Note: mV mV mV Test Condition VCB = 5V, f = 1.0MHz VCB = 10V, f = 1.0MHz VCE = 5V, IC = 10mA, f = 100MHz VCE = 5V, IC = 200A, RS = 2.0k, f = 1.0kHz, f = 200Hz VCC = 30V, IC = 150mA, IB1 = -IB2 = 15mA 9. Measured under pulsed conditions. Pulse width 300s. Duty cycle 2%. BC846BLP4 Document number: DS35751 Rev. 3 - 2 4 of 7 www.diodes.com September 2017 (c) Diodes Incorporated BC846BLP4 Typical Electrical Characteristics 500 125OC IC Collector Current (A) hFE, DC Current Gain 150OC 400 300 85OC 200 25OC 100 -55OC 0 0.01 0.1 1 10 100 1000 T A = 25OC 0.3 IB=4mA IB=5mA 0.2 IB=1mA IB=2mA IB=3mA 0.1 0.0 0.0 IC Collector Current (mA) 20.0 40.0 60.0 VCE , Collector to emitter voltage (V) hFE v IC VCE v IC 1.2 VCE=5V IC/IB=20 1.0 O 25 C VBE(ON) (V) VCE(SAT) (V) -55 C 0.1 85OC 125OC O 150 C 0.01 0.01 0.1 0.6 150OC 0.4 O 125 C 0.2 1 10 0.0 0.01 100 0.1 1 10 100 1000 IC Collector Current (mA) VBE(ON) v IC VCE(SAT) v IC 1.2 100 IC/IB=20 1.0 VCBO=65V O 0.8 -55 C 10 ICBO (nA) VBE(SAT) (V) 85OC 0.8 IC Collector Current (mA) 0.6 25OC -55OC O 25OC 0.4 85OC 0.2 0.0 0.01 1 O 125 C 150OC 0.1 1 10 100 IC Collector Current (mA) 1000 0.1 -60 Document number: DS35751 Rev. 3 - 2 0 30 60 90 120 150 TA, Ambient Temperature VBE(SAT) v IC BC846BLP4 -30 ICBOv IC 5 of 7 www.diodes.com September 2017 (c) Diodes Incorporated BC846BLP4 (Cont.) 100 f = 1MHz Cibo 10 Cobo 1 0.1 0.1 1 10 100 VR,Reverse Voltage (V) fT, Gain Bandwidth Product (MHz) CT, Total Capacitance(pF) Typical Electrical Characteristics 1000 100 f =100MHz Vce=5V 10 VR V CT 1 10 100 IC, Collector Current (mA) IC V fT Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. X2-DFN1006-3 A A1 Seating Plane D b Pin #1 ID e E b2 X2-DFN1006-3 Dim Min Max Typ A 0.40 A1 0.00 0.05 0.03 b 0.10 0.20 0.15 b2 0.45 0.55 0.50 D 0.95 1.05 1.00 E 0.55 0.65 0.60 e 0.35 L1 0.20 0.30 0.25 L2 0.20 0.30 0.25 L3 0.40 z 0.02 0.08 0.05 All Dimensions in mm z L2 BC846BLP4 Document number: DS35751 Rev. 3 - 2 L3 L1 6 of 7 www.diodes.com September 2017 (c) Diodes Incorporated BC846BLP4 Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. X2-DFN1006-3 C Y Dimensions C G1 G2 X X1 Y Y1 Y1 G2 X G1 X1 Value (in mm) 0.70 0.30 0.20 0.40 1.10 0.25 0.70 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Copyright (c) 2017, Diodes Incorporated www.diodes.com BC846BLP4 Document number: DS35751 Rev. 3 - 2 7 of 7 www.diodes.com September 2017 (c) Diodes Incorporated Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Diodes Incorporated: BC846BLP4-7B