VS-20ETF..SPbF Series www.vishay.com Vishay Semiconductors Surface Mount Fast Soft Recovery Rectifier Diode, 20 A FEATURES * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C * Designed and qualified according to JEDEC-JESD47 Base common cathode + 2 * Material categorization: For definitions of compliance www.vishay.com/doc?99912 D2PAK (SMD-220) 3 - Anode 1 Anode - * Output rectification and freewheeling in inverters, choppers and converters * Input rectifications where severe restrictions on conducted EMI should be met TO-263AB (D2PAK) IF(AV) 20 A VR 200 V, 400 V, 600 V VF at IF 1.3 V IFSM 300 A trr 60 ns TJ max. 150 C Diode variation Single die Snap factor 0.6 see APPLICATIONS PRODUCT SUMMARY Package please DESCRIPTION The VS-20ETF..SPbF soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS Sinusoidal waveform VALUES UNITS 20 A VRRM 200 to 600 V IFSM 300 A VF 10 A, TJ = 25 C 1.2 V trr 1 A, 100 A/s 60 ns TJ Range - 40 to 150 C VOLTAGE RATINGS VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V VS-20ETF02SPbF 200 300 VS-20ETF04SPbF 400 500 VS-20ETF06SPbF 600 700 PART NUMBER IRRM AT 150 C mA 5 ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current Maximum peak one cycle non-repetitive surge current SYMBOL IF(AV) IFSM Maximum I2t for fusing I2t Maximum I2t for fusing I2t Revision: 17-Jun-13 TEST CONDITIONS VALUES TC = 97 C, 180 conduction half sine wave 20 10 ms sine pulse, rated VRRM applied 250 10 ms sine pulse, no voltage reapplied 300 10 ms sine pulse, rated VRRM applied 316 10 ms sine pulse, no voltage reapplied 442 t = 0.1 ms to 10 ms, no voltage reapplied 4420 UNITS A A2s A2s Document Number: 94097 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20ETF..SPbF Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop VFM Forward slope resistance TEST CONDITIONS VALUES 20 A, TJ = 25 C 1.30 60 A, TJ = 25 C 1.67 rt Threshold voltage VF(TO) Maximum reverse leakage current IRM UNITS V 12.5 m TJ = 150 C 0.9 V TJ = 25 C 0.1 TJ = 150 C VR = Rated VRRM mA 5.0 RECOVERY CHARACTERISTICS PARAMETER SYMBOL Reverse recovery time trr Reverse recovery current Irr Reverse recovery charge Qrr Snap factor S TEST CONDITIONS VALUES UNITS 160 ns IF at 20 Apk 100 A/s 25 C 10 A 1.25 C Typical 0.6 IFM trr ta tb dir dt t Qrr IRM(REC) THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance junction to ambient (PCB mount) Soldering temperature SYMBOL TEST CONDITIONS TJ, TStg RthJC DC operation VALUES UNITS - 40 to 150 C 0.9 C/W RthJA (1) 40 TS 260 Approximate weight C 2 g 0.07 oz. 20ETF02S Marking device Case style TO-263AB (D2PAK) 20ETF04S 20ETF06S Note (1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 m) copper 40 C/W. For recommended footprint and soldering techniques refer to application note #AN-994. Revision: 17-Jun-13 Document Number: 94097 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20ETF..SPbF Series www.vishay.com Vishay Semiconductors 45 20ETF.. Series RthJC (DC) = 0.9 K/W 140 Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (C) 150 130 O 120 Conduction angle 110 100 90 60 90 120 180 30 80 70 2 4 6 8 30 25 20 RMS limit O 15 Conduction period 10 20ETF.. Series TJ = 150 C 5 10 12 14 16 18 20 22 5 0 10 20 15 25 30 35 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Rating Characteristics Fig. 4 - Forward Power Loss Characteristics 150 300 20ETF.. Series RthJC (DC) = 0.9 K/W 140 130 At any rated load condition and with rated VRRM applied following surge. Peak Half Sine Wave Forward Current (A) Maximum Allowable Case Temperature (C) 35 0 0 O Conduction period 120 110 30 60 100 90 90 120 250 Initial TJ = 150 C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 200 150 100 20ETF.. Series DC 180 50 80 0 5 10 15 20 30 25 35 1 10 100 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Average Forward Current (A) Fig. 2 - Current Rating Characteristics 550 35 180 120 90 60 30 30 25 20 RMS limit 15 O Conduction angle 10 5 20ETF.. Series TJ = 150 C 5 10 15 20 450 25 Initial TJ = 150 C No voltage reapplied Rated VRRM reapplied 400 350 300 250 200 150 100 0 0 Maximum non-repetitive surge current versus pulse train duration. 500 Peak Half Sine Wave Forward Current (A) Maximum Average Forward Power Loss (W) DC 180 120 90 60 30 40 20ETF.. Series 50 0.001 0.01 0.1 1 Average Forward Current (A) Pulse Train Duration (s) Fig. 3 - Forward Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Revision: 17-Jun-13 Document Number: 94097 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20ETF..SPbF Series Vishay Semiconductors 1000 4.0 100 TJ = 25 C TJ = 150 C 10 20ETF.. Series IFM = 20 A 2.5 2.0 IFM = 10 A 1.5 1.0 IFM = 5 A IFM = 1 A 0 1 3 2 4 0 5 200 400 600 800 1000 Instantaneous Forward Voltage (V) dI/dt - Rate of Fall of Forward Current (A/s) Fig. 7 - Forward Voltage Drop Characteristics Fig. 10 - Recovery Charge Characteristics, TJ = 25 C 10 0.20 20ETF.. Series TJ = 25 C 0.15 IFM = 30 A IFM = 20 A 0.10 IFM = 10 A IFM = 5 A 0.05 20ETF.. Series TJ = 150 C 9 Qrr - Typical Reverse Recovery Charge (C) trr - Typical Reverse Recovery Time (s) 3.0 0.5 1 0 IFM = 1 A IFM = 30 A 8 7 IFM = 20 A 6 5 4 IFM = 10 A 3 2 IFM = 5 A 1 IFM = 1 A 0 0 0 200 400 600 800 0 1000 200 400 600 800 1000 dI/dt - Rate of Fall of Forward Current (A/s) dI/dt - Rate of Fall of Forward Current (A/s) Fig. 8 - Recovery Time Characteristics, TJ = 25 C Fig. 11 - Recovery Charge Characteristics, TJ = 150 C 0.5 70 20ETF.. Series TJ = 150 C IFM = 30 A IFM = 20 A IFM = 10 A IFM = 5 A IFM = 1 A 0.3 0.2 20ETF.. Series TJ = 25 C 60 0.4 Irr - Typical Reverse Recovery Current (A) trr - Typical Reverse Recovery Time (s) IFM = 30 A 20ETF.. Series TJ = 25 C 3.5 Qrr - Typical Reverse Recovery Charge (C) Instantaneous Forward Current (A) www.vishay.com 0.1 IFM = 30 A 50 IFM = 20 A 40 IFM = 10 A 30 IFM = 5 A 20 10 IFM = 1 A 0 0 0 200 400 600 800 1000 0 200 400 600 800 1000 dI/dt - Rate of Fall of Forward Current (A/s) dI/dt - Rate of Fall of Forward Current (A/s) Fig. 9 - Recovery Time Characteristics, TJ = 150 C Fig. 12 - Recovery Current Characteristics, TJ = 25 C Revision: 17-Jun-13 Document Number: 94097 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20ETF..SPbF Series www.vishay.com Vishay Semiconductors 100 Irr - Typical Reverse Recovery Current (A) 20ETF.. Series TJ = 150 C IFM = 30 A 80 IFM = 20 A 60 IFM = 10 A 40 IFM = 5 A 20 IFM = 1 A 0 0 200 400 600 800 1000 dI/dt - Rate of Fall of Forward Current (A/s) ZthJC - Transient Thermal Impedance (K/W) Fig. 13 - Recovery Current Characteristics, TJ = 150 C 10 Steady state value (DC operation) 1 0.1 0.01 0.0001 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single pulse 0.001 0.01 20ETF.. Series 0.1 1 Square Wave Pulse Duration (s) Fig. 14 - Thermal Impedance ZthJC Characteristics Revision: 17-Jun-13 Document Number: 94097 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20ETF..SPbF Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 20 E T F 06 S 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (20 = 20 A) 3 - Circuit configuration: TRL PbF 8 9 E = Single diode 4 - Package: T = TO-220 5 - Type of silicon: F = Fast soft recovery rectifier 6 - Voltage code x 100 = VRRM 7 - S = D2PAK 8 - 02 = 200 V 04 = 400 V 06 = 600 V None = Tube TRR = Tape and reel (right oriented) TRL = Tape and reel (left oriented) 9 - PbF = Lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-20ETF02SPbF 50 1000 Antistatic plastic tubes VS-20ETF02STRRPbF 800 800 13" diameter reel VS-20ETF02STRLPbF 800 800 13" diameter reel VS-20ETF04SPbF 50 1000 Antistatic plastic tubes VS-20ETF04STRRPbF 800 800 13" diameter reel VS-20ETF04STRLPbF 800 800 13" diameter reel VS-20ETF06SPbF 50 1000 Antistatic plastic tubes VS-20ETF06STRRPbF 800 800 13" diameter reel VS-20ETF06STRLPbF 800 800 13" diameter reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95046 Part marking information www.vishay.com/doc?95054 Packaging information www.vishay.com/doc?95032 Revision: 17-Jun-13 Document Number: 94097 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors D2PAK DIMENSIONS in millimeters and inches Conforms to JEDEC outline D2PAK (SMD-220) (2)(3) E B Pad layout A A (E) c2 11.00 MIN. (0.43) A (3) L1 4 9.65 MIN. (0.38) (D1) (3) Detail A D H 1 2 17.90 (0.70) 15.00 (0.625) (2) 3 3.81 MIN. (0.15) L2 B B 2.32 MIN. (0.08) A 2 x b2 c 2.64 (0.103) 2.41 (0.096) (3) E1 C View A - A 2xb 0.004 M B 0.010 M A M B Plating H 2x e Base Metal (4) b1, b3 Gauge plane Seating plane Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode SYMBOL MILLIMETERS MIN. c1 (4) (c) B 0 to 8 MAX. L3 Lead tip A1 L (b, b2) L4 Section B - B and C - C Scale: None Detail "A" Rotated 90 CW Scale: 8:1 INCHES MIN. MAX. NOTES SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3 A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 4 4 4 e 0.100 BSC H 14.61 15.88 0.575 0.625 L 1.78 2.79 0.070 0.110 L1 - 1.65 - 0.066 L2 1.27 1.78 0.050 0.070 L3 2 2.54 BSC L4 0.25 BSC 4.78 5.28 3 0.010 BSC 0.188 0.208 Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inch (7) Outline conforms to JEDEC outline TO-263AB Document Number: 95046 Revision: 31-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: VS-20ETF06SPBF VS-20ETF06STRRPBF VS-20ETF04SPBF VS-20ETF06STRLPBF VS-20ETF04STRLPBF