DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage MBD128 BAT754L Schottky barrier triple diode Product data sheet 2001 Jan 18 NXP Semiconductors Product data sheet Schottky barrier triple diode BAT754L FEATURES PINNING * Very low forward voltage PIN DESCRIPTION * Guard ring protected 1 anode 1 * Low diode capacitance 2 anode 2 * Three independent diodes in a small plastic SMD package. 3 anode 3 4 cathode 3 5 cathode 2 6 cathode 1 APPLICATIONS * Ultra high-speed switching * Voltage clamping * Protection circuits * Blocking diodes 6 5 4 * Low power consumption applications (e.g. hand-held applications). 6 5 4 1 2 3 DESCRIPTION Three internal (galvanic) isolated silicon epitaxial Schottky barrier diodes in a SOT363 small SMD plastic package. 1 2 3 Top view MBL256 MARKING TYPE NUMBER MARKING CODE BAT754L Fig.1 Simplified outline (SOT363) and symbol. L1 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VR continuous reverse voltage - 30 V IF continuous forward current - 200 mA IFRM repetitive peak forward current tp < 1 s; < 0.5 - 300 mA IFSM non-repetitive peak forward current tp < 10 ms - 600 mA Tstg storage temperature -65 +150 C Tj junction temperature - 125 C Tamb operating ambient temperature -65 +125 C 2001 Jan 18 2 NXP Semiconductors Product data sheet Schottky barrier triple diode BAT754L THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT 416 K/W MAX. UNIT note 1 Note 1. Refer to SOT363 standard mounting conditions. ELECTRICAL CHARACTERISTICS Tamb = 25 C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS Per diode VF forward voltage note 1; see Fig.2 IF = 0.1 mA 200 mV IF = 1 mA 260 mV IF = 10 mA 340 mV IF = 30 mA 420 mV IF = 100 mA 750 mV IR reverse current VR = 25 V; note 1; see Fig.3 2 A Cd diode capacitance VR = 1 V; f = 1 MHz; see Fig.4 10 pF Note 1. Pulse test: pulse width = 300 s; = 0.02. 2001 Jan 18 3 NXP Semiconductors Product data sheet Schottky barrier triple diode BAT754L MSA892 IF I R (A) (1) (2) (3) (mA) 10 MSA893 10 3 3 10halfpage handbook, (1) 10 2 2 (2) 10 10 (1) 1 10 1 (2) (3) 1 (3) 10 1 0 0.4 0.8 VF (V) 0 1.2 10 (1) Tamb = 125 C. (2) Tamb = 85 C. (3) Tamb = 25 C. (1) Tamb = 125 C. (2) Tamb = 85 C. (3) Tamb = 25 C. Fig.2 Fig.3 Forward current as a function of forward voltage; typical values. MSA891 15 handbook, halfpage Cd (pF) 10 5 0 0 10 20 VR (V) 30 f = 1 MHz; Tamb = 25 C. Fig.4 Diode capacitance as a function of reverse voltage; typical values. 2001 Jan 18 4 20 VR (V) 30 Reverse current as a function of reverse voltage; typical values. NXP Semiconductors Product data sheet Schottky barrier triple diode BAT754L PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT363 D E B y X A HE 6 v M A 4 5 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION SOT363 2001 Jan 18 REFERENCES IEC JEDEC EIAJ SC-88 5 EUROPEAN PROJECTION ISSUE DATE 97-02-28 NXP Semiconductors Product data sheet Schottky barrier triple diode BAT754L DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. General Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. 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Export might require a prior authorization from national authorities. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2001 Jan 18 6 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com (c) NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/01/pp7 Date of release: 2001 Jan 18 Document order number: 9397 750 07668