DATA SH EET
Product data sheet 2001 Jan 18
DISCRETE SEMICONDUCTORS
BAT754L
Schottky barrier triple diode
db
ook, halfpage
MBD128
2001 Jan 18 2
NXP Semiconductors Product data sheet
Schottky barrier triple diode BAT754L
FEATURES
•Very low forward voltage
•Guard ring protected
•Low diode capacitance
•Three independent diodes in a small plastic SMD
package.
APPLICATIONS
•Ultra high-speed switching
•Voltage clamping
•Protection circuits
•Blocking diodes
•Low power consumption applications (e.g. hand-held
applications).
DESCRIPTION
Three internal (galvanic) isolated silicon epitaxial Schottky
barrier diodes in a SOT363 small SMD plastic package.
MARKING
PINNING
TYPE NUMBER MARKING CODE
BAT754L L1
PIN DESCRIPTION
1anode 1
2anode 2
3anode 3
4cathode 3
5cathode 2
6cathode 1
MBL25
6
123
654
123
654
T
op view
Fig.1 Simplified outline (SOT363) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
VRcontinuous revers e voltage −30 V
IFcontinuous forward current −200 mA
IFRM repetitive peak forward current tp < 1 s; δ < 0.5 −300 mA
IFSM non-repetitive peak forward current tp < 10 ms −600 mA
Tstg storage temperature −65 +150 °C
Tjjunction temperature −125 °C
Tamb operating ambient temperature −65 +125 °C
2001 Jan 18 3
NXP Semiconductors Pr oduct data shee t
Schottky barrier triple diode BAT754L
THERMAL CHARACTE RISTICS
Note
1. Refer to SOT363 standard mounting conditions.
ELECTRICAL CHARACTERISTIC S
Tamb = 25 °C; unless otherwise specified.
Note
1. Pulse test: pulse width = 300 μs; δ = 0.02.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 416 K/W
SYMBOL PARAMETER CONDITIONS MAX. UNIT
Per diode
VFforward voltage note 1; see Fig.2
IF = 0.1 mA 200 mV
IF = 1 mA 260 mV
IF = 10 mA 340 mV
IF = 30 mA 420 mV
IF = 100 mA 750 mV
IRreverse current VR = 25 V; note 1; see Fig.3 2μA
Cddiode capacitan ce VR = 1 V; f = 1 MHz; see Fig.4 10 pF
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NXP Semiconductors Pr oduct data shee t
Schottky barrier triple diode BAT754L
handbook, halfpage
10
IF
VF (V)
3
10
(mA)
2
10
1
10 11.20.80.40
MSA892
(3)(2)(1)
(3)(2)(1)
Fig.2 Forward current as a function of forward
voltage; typical values.
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
0102030
V (V)
R
10
3
IR
(μA)
10
2
10
1
10
1
(1)
(2)
(3)
MSA893
Fig.3 Reverse current as a function of rev erse
voltage; typical values.
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
h
andbook, halfpage
0102030
0
5
10
15
VR (V)
Cd
(pF)
MSA891
Fig.4 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tamb = 25 °C.
2001 Jan 18 5
NXP Semiconductors Pr oduct data shee t
Schottky barrier triple diode BAT754L
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT363 SC-88
wB
M
bp
D
e1
e
pin 1
index A
A1
Lp
Q
detail X
HE
E
v
M
A
AB
y
0 1 2 mm
scale
c
X
132
4
56
Plastic surface mounted package; 6 leads SOT363
UNIT A1
max bpcDEe
1
HELpQywv
mm 0.1 0.30
0.20 2.2
1.8
0.25
0.10 1.35
1.15 0.65
e
1.3 2.2
2.0 0.2 0.10.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15 0.25
0.15
A
1.1
0.8
97-02-28
2001 Jan 18 6
NXP Semiconductors Pr oduct data shee t
Schottky barrier triple diode BAT754L
DATA SHEET STATUS
Notes
1. Please consult the most rec en tly issued document before initiating or completing a design.
2. The product s tatus of device(s) described in this document may have chang ed since this document wa s published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product s pecification.
DISCLAIMERS
General ⎯ Information in this document is believed to be
accurate and reliable . H ow ev er, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequenc es of use of such informatio n.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this doc ument, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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not designed, au thorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reason ably be
expected to result in pe rs onal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefor e s uc h inclusion and/or use is at
the customer’s own risk .
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modification .
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other cond itions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
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case of any incons istency or conflict betwee n information
in this document an d such terms and conditio ns, the latter
will prevail.
No offer to sell or license ⎯ Nothing in this document
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that is open for accept ance or the grant, conv eyance or
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described herein may be subject to export control
regulations. Export might require a prior authorization from
national author ities.
Quick refer ence data ⎯ The Quick reference data is an
extract of th e product data given in the Limiting values an d
Characteristics sections of this document, an d as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
Contact information
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information pr e sent ed in this document d oes not form part of an y q uot ation or co ntract, is believed to be a ccur ate a nd re li a ble and may be chan ged
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Printed in The Netherlands 613514/01/pp7 Date of release: 2001 Jan 18 Document orde r number: 9397 750 07668
