2N2369AUB Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corpoation offers: * High-speed switching transistor * Low power * NPN silicon transistor * Screening and processing per MIL-PRF-19500 Appendix E * JAN level (2N2369AUBJ) * JANTX level (2N2369AUBJX) * JANTXV level (2N2369AUBJV) * JANS level (2N2369AUBJS) * JANSR level (2N2369AUBJSR) * JANSR level (2N2369AUBJSR) * QCI to the applicable level * 100% die visual inspection per MIL-STD-750 method Features 2072 for JANTXV and JANS * * * * * Radiation testing (total dose) upon request Hermetically sealed Cersot ceramic Also available in chip configuration Chip geometry 0005 Reference document: MIL-PRF-19500/317 Benefits * Qualification Levels: JAN, JANTX, JANTXV, JAN, JANSR and JANSF * Radiation testing available Please contact SEMICOA for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage TC = 25C unless otherwise specified Symbol VCEO Rating 15 Collector-Base Voltage VCBO 40 Unit Volts Volts Emitter-Base Voltage VEBO 4.5 Volts PT 0.4 3.08 RJA 325 mW mW/C C/W TJ -65 to +200 C TSTG -65 to +200 C Power Dissipation, TA = 25C Derate linearly above 70C Thermal Resistance Operating Junction Temperature Storage Temperature Copyright 2010 Rev. J SEMICOA Corporation 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 1 of 1 2N2369AUB Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25C Off Characteristics Parameter Collector-Emitter Breakdown Voltage Symbol Test Conditions Min V(BR)CEO IC = 10 mA VCB = 40 Volts VCB = 32 Volts VCB = 20 Volts, TA = 150C VCE= 10Volts, VEB= 0.25Volts TA = 125C VCE = 20 Volts VEB = 4.5 Volts VEB = 4 Volts 15 Collector-Base Cutoff Current ICBO1 ICBO2 ICBO3 Collector-Emitter Cutoff Current ICEX Collector-Emitter Cutoff Current ICES IEBO1 IEBO2 Emitter-Base Cutoff Current On Characteristics Typ Max Units Volts 10 0.2 30 A 30 A 400 10 0.25 nA A Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% Parameter Symbol hFE1 hFE2 hFE3 hFE4 hFE5 DC Current Gain Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage VBEsat1 VBEsat2 VBEsat3 VBEsat4 VBEsat5 VCEsat1 VCEsat2 VCEsat3 VCEsat4 Test Conditions IC = 10 mA, VCE = 0.35 Volts IC = 30 mA, VCE = 0.4 Volts IC = 10 mA, VCE = 1 Volts IC = 100 mA, VCE = 1 Volts IC = 10 mA, VCE = 1 Volts TA = -55C IC = 10 mA, IB = 1 mA IC = 30 mA, IB = 3 mA IC = 100 mA, IB = 10 mA IC= 10mA, IB= 1mA,TA=+125C IC= 10mA, IB= 1mA, TA = -55C IC = 10 mA, IB = 1 mA IC = 30 mA, IB = 3 mA IC = 100 mA, IB = 10 mA IC= 10mA, IB= 1mA,TA=+125C Min 40 30 40 20 20 Typ 0.70 Max 120 120 120 120 0.85 0.90 1.20 0.80 0.59 Units Volts 1.02 0.20 0.25 0.45 0.30 Volts Max Units Dynamic Characteristics Parameter Magnitude - Common Emitter, Short Circuit Forward Current Transfer Ratio Symbol |hFE| Open Circuit Output Capacitance COBO Open Circuit Input Capacitance CIBO Test Conditions VCE = 10 Volts, IC = 10 mA, f = 100 MHz VCB = 5 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VEB = 0.5 Volts, IC = 0 mA, 100 kHZ < f < 1 MHz Min Typ 5 10 4 pF 5 pF 13 ns 12 ns 18 ns Switching Characteristics Storage Time ts Saturated Turn-On Time tON Saturated Turn-Off Time tOFF Copyright 2010 Rev. J IC = 10 mA, IB1=IB2 = 10 mA IC = 10 mA, IB1= 3 mA, IB2 = 1.5 mA IC = 10 mA, IB1= 3 mA, IB2 = 1.5 mA SEMICOA Corporation 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 2 of 2